公开(公告)号：US20230143907A1

公开(公告)日：2023-05-11

申请号：US17720872

申请日：2022-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Joosung Kim ,  Younghwan Park ,  Junghun Park ,  Dongchul Shin ,  Eunsung Lee ,  Joohun Han

IPC: H01L33/04 ,  H01L27/15 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/04 ,  H01L27/156 ,  H01L33/24 ,  H01L33/44

Abstract: Provided is an epitaxy structure including a substrate having an upper surface, the upper surface having a single crystal structure, a two-dimensional material layer disposed on the upper surface of the substrate, and a plurality of nanorod light emitting devices disposed on an upper surface of the two-dimensional material layer, each of the plurality of nanorod light emitting devices having a nanorod shape extending in a vertical direction, wherein each of the plurality of nanorod light emitting devices includes a light emitting nanorod, and a passivation film disposed adjacent to a sidewall of the light emitting nanorod, the passivation film having insulation.

公开(公告)号：US12249671B2

公开(公告)日：2025-03-11

申请号：US17582172

申请日：2022-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Nakhyun Kim ,  Joosung Kim ,  Eunsung Lee ,  Joohun Han ,  Kiho Kong ,  Junghun Park

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/44 ,  H01L25/075

Abstract: Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.

公开(公告)号：US12026376B2

公开(公告)日：2024-07-02

申请号：US17953756

申请日：2022-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsung Lee ,  Changhoon Shin

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0652 ,  G06F3/0679

Abstract: A method and a device are provided. The device includes a first memory, a second memory having a storage characteristic different from that of the first memory, and a processor operatively connected to at least one of the first memory and the second memory. The processor is configured to generate a logical storage area in a data area of the first memory, store designated data in the generated logical storage area, and enter a recovery mode to store the data stored in the logical storage area in the second memory, format the first memory, and move the data stored in the second memory to the data area of the first memory.

公开(公告)号：US11776988B2

公开(公告)日：2023-10-03

申请号：US17227981

申请日：2021-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Dongho Kim ,  Junghun Park ,  Jinjoo Park ,  Eunsung Lee ,  Joohun Han

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

公开(公告)号：US11114616B2

公开(公告)日：2021-09-07

申请号：US16550476

申请日：2019-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsung Lee ,  Duseop Yoon ,  Joungeun Yoo

IPC: H01L45/00 ,  H01L27/24

Abstract: Provided are a titanium-based amorphous alloy and a phase-change memory device in which the titanium-based amorphous alloy is applied to a phase-change layer. The titanium-based amorphous alloy may include titanium, antimony, and at least one metallic component. The titanium-based amorphous alloy may be configured as a phase-change material having a reversible phase change between a titanium-based amorphous alloy phase and at least one crystalline phase.

公开(公告)号：US20250169244A1

公开(公告)日：2025-05-22

申请号：US18955332

申请日：2024-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun HAN ,  Joosung Kim ,  Junhee Choi ,  Nakhyun Kim ,  Eunsung Lee

IPC: H01L33/44 ,  H01L25/075 ,  H01L25/16 ,  H01L33/00 ,  H01L33/62

Abstract: A semiconductor light-emitting device includes: a light-emitting stack structure including a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer; and a first passivation layer disposed on a side surface of the light-emitting stack structure.

公开(公告)号：US12237365B2

公开(公告)日：2025-02-25

申请号：US18456069

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Dongho Kim ,  Junghun Park ,  Jinjoo Park ,  Eunsung Lee ,  Joohun Han

IPC: H01L27/15

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

公开(公告)号：US20240113264A1

公开(公告)日：2024-04-04

申请号：US18375194

申请日：2023-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Joosung Kim ,  Eunsung Lee ,  Joohun Han

IPC: H01L33/50 ,  H01L25/16

CPC classification number: H01L33/502 ,  H01L25/167 ,  H01L2933/0041

Abstract: A light emitting device includes a light emitting rod in which a porous first type semiconductor layer, an active layer, and a second type semiconductor layer are sequentially arranged, and a wavelength conversion cluster is embedded in the porous first type semiconductor layer and configured to convert a first light generated in the active layer into a second light having a different wavelength.

公开(公告)号：US10413275B2

公开(公告)日：2019-09-17

申请号：US14732894

申请日：2015-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsung Lee ,  Youngil Kim ,  Jong Keun Song ,  Minseog Choi

IPC: A61B8/00 ,  A61B8/14 ,  G01S7/52 ,  B06B1/02 ,  G01S15/89 ,  A61B8/08

Abstract: Disclosed herein is an ultrasound probe including a transducer array configured to generate ultrasonic waves, an integrated circuit disposed on a back surface of the transducer array by using an adhesive member, a printed circuit board connected to the integrated circuit and configured to output a signal to the integrated circuit, and a pad bridge disposed on front surfaces of the printed circuit board and the integrated circuit by using the adhesive member and configured to electrically connect the printed circuit board with the integrated circuit. An area of a region of the ultrasound probe contacting the human body may be reduced without reducing the size of the transducer array, and the integrated circuit and the printed circuit board may be integrally connected by using the adhesive member.

公开(公告)号：US20240072014A1

公开(公告)日：2024-02-29

申请号：US18106855

申请日：2023-02-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho KONG ,  Junhee Chol ,  Eunsung Lee

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L33/005 ,  H01L33/10 ,  H01L33/145 ,  H01L33/62 ,  H01L2933/0066

Abstract: An ultra-high pixel per inch (ppi) micro-light-emitting diode (LED) display includes a micro-LED layer including a plurality of micro-LEDs, a backplane layer including a switching device connected to the micro-LED layer, and a field shielding member provided between the plurality of micro-LEDs and the switching device, the field shielding member configured to shield the switching device from a field applied to the switching device from the plurality of micro-LEDs during an operation of the micro-LED display, where the micro-LED layer and the backplane layer form a single body in a sequentially stacked structure.