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公开(公告)号：US20250076765A1
公开(公告)日：2025-03-06
申请号：US18794952
申请日：2024-08-05
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Daeseok SONG , Ran NAMGUNG , Kyoungjin HA , Hyeon PARK , Minsoo KIM
Abstract: Provided are a resist topcoat composition and a method of forming patterns using the resist topcoat composition, the resist topcoat composition including a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2; at least one acidic compound selected from a sulfonic acid compound containing at least one fluorine, a sulfonimide compound containing at least one fluorine, and a carboxylic acid compound containing at least one fluorine; and a solvent.
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公开(公告)号：US20240385522A1
公开(公告)日：2024-11-21
申请号：US18610099
申请日：2024-03-19
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Taeksoo KWAK , Si-Kyun PARK , Hyungrang MOON , Jongpil HO , Gyeonghun PARK , Myoungsoo SONG , Jin-Hee BAE , Minsoo KIM , Seung HAN , Taeho KIM , Gyeong Ryeong BAK
IPC: G03F7/11 , C07F7/22 , G03F7/004 , H01L21/027
Abstract: A composition for removing edge beads from metal-containing resists, and a method of forming patterns including a step of removing edge beads using the composition are provided. The composition for removing edge beads includes an additive including at least one selected from among phosphoric acid, a phosphorous acid-based compound, and a hypophosphorous acid-based compound, and a carboxylic acid-based compound, and an organic solvent, where a mixed weight ratio of the at least one selected from among the phosphoric acid, the phosphorous acid-based compound, and the hypophosphorous acid-based compound to the carboxylic acid-based compound is about 9:1 to about 1.2:1.
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公开(公告)号：US20240319601A1
公开(公告)日：2024-09-26
申请号：US18578627
申请日：2022-07-04
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Ryunmin HEO , Hyungrang MOON , Minyoung LEE , Minsoo KIM , Youngkwon KIM , Jaehyun KIM , Changsoo WOO
CPC classification number: G03F7/11 , G03F7/0042 , G03F7/168
Abstract: Provided is a method of forming patterns that includes coating a metal-containing resist composition on a substrate; coating a composition for removing edge beads along the edge of the substrate; drying and heating the coated resultant to form a metal-containing resist film on the substrate; and exposing and developing the dried and heated resultant to form a resist pattern,
wherein the composition for removing edge beads may include at least one additive selected from a phosphorous acid-based compound, a hypophosphorous acid-based compound, a sulfurous acid-based compound and a hydroxamic acid-based compound, and an organic solvent.-
公开(公告)号：US20240288774A1
公开(公告)日：2024-08-29
申请号：US18570518
申请日：2022-06-27
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Minyoung LEE , Hyungrang MOON , Ryunmin HEO , Minsoo KIM , Youngkwon KIM , Jaehyun KIM , Changsoo WOO
CPC classification number: G03F7/168 , G03F7/0042
Abstract: Provided are composition for removing edge beads from metal-containing resists, and a method of forming patterns including step of removing edge beads using the same and the composition includes an organic solvent and a cyclic compound substituted with at least one hydroxy group (—OH),
wherein the cyclic compound has a carbon number of 5 to 30, and
the cyclic compound has at least one double bond in the ring.-
公开(公告)号：US20250076764A1
公开(公告)日：2025-03-06
申请号：US18794878
申请日：2024-08-05
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Hyeon PARK , Ran NAMGUNG , Kyoungjin HA , Daeseok SONG , Minsoo KIM
IPC: G03F7/11 , C08F220/28 , C09D133/16
Abstract: Provided are a resist topcoat composition and a method of forming patterns using the resist topcoat composition, the resist topcoat composition including a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2, and a third structural unit represented by Chemical Formula M-3A or Chemical Formula M-3B; and a solvent.
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Patent Agency Ranking
公开(公告)号：US20240427248A1
公开(公告)日：2024-12-26
申请号：US18734967
申请日：2024-06-05
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Kyoungjin HA , Ran NAMGUNG , Hyeon PARK , Daeseok SONG , Minsoo KIM
IPC: G03F7/11 , C08F220/28 , C09D133/16
Abstract: A resist topcoat composition and a method of forming (or providing) patterns utilizing the resist topcoat composition are provided. The resist topcoat composition includes a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2, and a third structural unit represented by Chemical Formula M-3A or Chemical Formula M-3B; and a solvent. Details about the above chemical formulas are as described in the specification.
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公开(公告)号：US20240393684A1
公开(公告)日：2024-11-28
申请号：US18617447
申请日：2024-03-26
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Jongpil HO , Hyungrang MOON , Seung HAN , Taeho KIM , Gyeong Ryeong BAK , Si-Kyun PARK , Taeksoo KWAK , Gyeonghun PARK , Myoungsoo SONG , Jin-Hee BAE , Minsoo KIM
Abstract: Provided is a method of forming patterns which includes coating a metal-containing resist composition on a substrate; drying and heating to form a metal-containing resist film on the substrate; exposing the metal-containing resist film using a patterned mask; and coating a developer composition to remove unexposed regions to form a resist pattern A thickness of the resist film after development is increased by about 5 to about 100% compared to the thickness of the resist film before development, and
a surface of the resist film after the development may include about 5 to about 20 at % of at least one selected from a phosphorus element and a sulfur element, based on the total number of atoms.-
公开(公告)号：US20210230127A1
公开(公告)日：2021-07-29
申请号：US17147308
申请日：2021-01-12
Applicant: Samsung SDI Co., Ltd.
Inventor： Yoojeong CHOI , Soonhyung KWON , Hyeon PARK , Jaeyeol BAEK , Minsoo KIM , Shinhyo BAE , Daeseok SONG , Dowon AHN
IPC: C07D251/34 , G03F7/11 , G03F7/26 , G03F7/16 , G03F7/004
Abstract: A resist underlayer composition includes (A) a polymer including a structural unit represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof; (B) a polymer including a structure in which at least one moiety represented by Chemical Formula 3 or Chemical Formula 4 and a moiety represented by Chemical Formula 7 are bound to each other; and (C) a solvent:
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公开(公告)号：US20250044696A1
公开(公告)日：2025-02-06
申请号：US18784565
申请日：2024-07-25
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Taeho KIM , Minsoo KIM , Hyungrang MOON , Si-Kyun PARK , Jin-Hee BAE , Seung HAN , Jongpil HO , Gyeong Ryeong BAK , Myoungsoo SONG , Gyeonghun PARK
Abstract: A composition for removing edge beads from metal-containing resists, a developer composition of metal-containing resists, and methods of forming patterns using the same are disclosed. The composition according to one or more embodiments includes a C1 to C10 carboxylic acid compound substituted with at least one fluorine; and an organic solvent.
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公开(公告)号：US20240393694A1
公开(公告)日：2024-11-28
申请号：US18658892
申请日：2024-05-08
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Hyungrang MOON , Jongpil HO , Taeho KIM , Seung HAN , Gyeonghun PARK , Myoungsoo SONG , Taeksoo KWAK , Si-Kyun PARK , Jin-Hee BAE , Minsoo KIM
IPC: G03F7/16
Abstract: A metal-containing photoresist developer composition includes an organic solvent, and a sulfonimide-based compound. A method of forming patterns utilizing the developer composition includes: coating a metal-containing resist composition on a substrate; coating a composition for removing edge beads from a metal-containing resist along an edge of the substrate; drying and heating the resultant to form a metal-containing resist layer on the substrate; exposing the metal-containing resist layer; and coating the metal-containing photoresist developer composition and developing the metal-containing photoresist developer composition.
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