公开(公告)号：US20250053090A1

公开(公告)日：2025-02-13

申请号：US18767428

申请日：2024-07-09

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Hwayoung JIN ,  Yoojeong CHOI ,  Jaeyeol BAEK ,  Soonhyung KWON ,  Seongjin KIM ,  Ahra CHO

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038

Abstract: Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof, a compound represented by Chemical Formula 3, and a solvent. The definitions of Chemical Formula 1 to Chemical Formula 3 are as described in the specification. (R1)x(R2)y(R3)Sn—(R4)(3-x-y)  Chemical Formula 3

公开(公告)号：US20210230127A1

公开(公告)日：2021-07-29

申请号：US17147308

申请日：2021-01-12

Applicant: Samsung SDI Co., Ltd.

Inventor： Yoojeong CHOI ,  Soonhyung KWON ,  Hyeon PARK ,  Jaeyeol BAEK ,  Minsoo KIM ,  Shinhyo BAE ,  Daeseok SONG ,  Dowon AHN

IPC: C07D251/34 ,  G03F7/11 ,  G03F7/26 ,  G03F7/16 ,  G03F7/004

Abstract: A resist underlayer composition includes (A) a polymer including a structural unit represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof; (B) a polymer including a structure in which at least one moiety represented by Chemical Formula 3 or Chemical Formula 4 and a moiety represented by Chemical Formula 7 are bound to each other; and (C) a solvent:

公开(公告)号：US20250053091A1

公开(公告)日：2025-02-13

申请号：US18778795

申请日：2024-07-19

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Ahra CHO ,  Yoojeong CHOI ,  Jaeyeol BAEK ,  Soonhyung KWON ,  Hwayoung JIN ,  Seongjin KIM

IPC: G03F7/09 ,  G03F7/004 ,  G03F7/039

Abstract: Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof, a photoacid generator having a mass reduction rate of about 0% after 3 minutes from the time of measurement during thermogravimetric analysis (TGA) at 205° C. in an air atmosphere (air gas), and a solvent. The definitions of Chemical Formula 1 and Chemical Formula 2 are as described in the specification.

公开(公告)号：US20210240082A1

公开(公告)日：2021-08-05

申请号：US17153095

申请日：2021-01-20

Applicant: Samsung SDI Co., Ltd.

Inventor： Jaeyeol BAEK ,  Soonhyung KWON ,  Minsoo KIM ,  Hyeon PARK ,  Shinhyo BAE ,  Daeseok SONG ,  Yoojeong CHOI

IPC: G03F7/11 ,  G03F7/26 ,  G03F7/004 ,  G03F7/16 ,  C07D251/32

Abstract: A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.

公开(公告)号：US20160355699A1

公开(公告)日：2016-12-08

申请号：US15076694

申请日：2016-03-22

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Minsoo KIM ,  Younhee NAM ,  Jaeyeol BAEK ,  Hyunji SONG ,  Byeri YOON ,  Seulgi JEONG ,  Seunghee HONG ,  Sunmin HWANG

IPC: C09D161/06 ,  H01L21/033 ,  H01L21/027 ,  G03F7/11

CPC classification number: C09D161/06 ,  C08G8/10 ,  C08G8/20 ,  C08G8/24 ,  G03F7/0752 ,  G03F7/094 ,  H01L21/0332

Abstract: An organic layer composition includes a first compound having a thermal shrinkage ratio of about 10% to about 70%, a second compound having a smaller thermal shrinkage ratio than the first compound, and a solvent, and an organic layer obtained by curing the organic layer composition and a method of forming patterns using the organic layer composition are disclosed.A method of measuring the thermal shrinkage ratio is described in the detailed description.

Abstract translation: 在详细描述中描述了热收缩率的测量方法。

公开(公告)号：US20250130493A1

公开(公告)日：2025-04-24

申请号：US18918816

申请日：2024-10-17

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Eunsu LEE ,  Jaeyeol BAEK ,  Byeonggyu HWANG ,  Hwayoung JIN ,  Soojeung KIM ,  Seongjin KIM ,  Ahra CHO ,  Yoojeong CHOI ,  Sungwoo JUNG ,  Changmo LIM ,  Soonhyung KWON

IPC: G03F7/038 ,  C08F226/06 ,  G03F7/16

Abstract: Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, a structural unit represented by Chemical Formula 3, or a combination thereof, a compound represented by one or more selected from Chemical Formula 4 to Chemical Formula 6, and a solvent. The definitions of Chemical Formula 1 to Chemical Formula 6 are as described in the specification.

公开(公告)号：US20230273523A1

公开(公告)日：2023-08-31

申请号：US18311627

申请日：2023-05-03

Applicant: Samsung SDI Co., Ltd.

Inventor： Jaeyeol BAEK ,  Soonhyung KWON ,  Minsoo KIM ,  Hyeon PARK ,  Shinhyo BAE ,  Daeseok SONG ,  Yoojeong CHOI

IPC: G03F7/11 ,  G03F7/26 ,  C07D251/32 ,  G03F7/16 ,  G03F7/004

CPC classification number: G03F7/11 ,  G03F7/26 ,  C07D251/32 ,  G03F7/168 ,  G03F7/0045

Abstract: A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.

公开(公告)号：US20220260914A1

公开(公告)日：2022-08-18

申请号：US17732807

申请日：2022-04-29

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Jaeyeol BAEK ,  Shinhyo BAE ,  Yoojeong CHOI ,  Soonhyung KWON ,  Hyeon PARK

IPC: G03F7/095 ,  G03F7/09 ,  G03F7/039 ,  G03F7/004 ,  G03F7/06

Abstract: A resist underlayer composition and a method of forming patterns, the composition including a polymer including at least one of a first moiety represented by Chemical Formula 1-1 and a second moiety represented by Chemical Formula 1-2; a thermal acid generator including a salt composed of an anion of an acid and a cation of a base, the base having pKa of greater than or equal to about 7; and a solvent,

公开(公告)号：US20180224744A1

公开(公告)日：2018-08-09

申请号：US15866809

申请日：2018-01-10

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Shinhyo BAE ,  Soonhyung KWON ,  Hyeon PARK ,  Jaeyeol BAEK ,  Beomjun JOO ,  Yoojeong CHOI ,  Kwen-Woo HAN

IPC: G03F7/09 ,  H01L21/308 ,  C08G59/42 ,  G03F7/11 ,  G03F7/039 ,  C08G59/24

Abstract: A resist underlayer composition and a method of forming patterns using the resist underlayer composition, the resist underlayer composition including a polymer including a moiety represented by Chemical Formula 1 and a moiety represented by Chemical Formula 2, and a solvent,

公开(公告)号：US20250068076A1

公开(公告)日：2025-02-27

申请号：US18776047

申请日：2024-07-17

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Seongjin KIM ,  Jaeyeol BAEK ,  Soonhyung KWON ,  Byeonggyu HWANG ,  Hwayoung JIN ,  Eunsu LEE ,  Ahra CHO ,  Yoojeong CHOI ,  Sungwoo JUNG

IPC: G03F7/11 ,  C08G73/06 ,  C09D179/04

Abstract: Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. The definitions of Chemical Formula 1 are as described in the specification.