公开(公告)号：US20250053090A1

公开(公告)日：2025-02-13

申请号：US18767428

申请日：2024-07-09

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Hwayoung JIN ,  Yoojeong CHOI ,  Jaeyeol BAEK ,  Soonhyung KWON ,  Seongjin KIM ,  Ahra CHO

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038

Abstract: Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof, a compound represented by Chemical Formula 3, and a solvent. The definitions of Chemical Formula 1 to Chemical Formula 3 are as described in the specification. (R1)x(R2)y(R3)Sn—(R4)(3-x-y)  Chemical Formula 3

公开(公告)号：US20210230127A1

公开(公告)日：2021-07-29

申请号：US17147308

申请日：2021-01-12

Applicant: Samsung SDI Co., Ltd.

Inventor： Yoojeong CHOI ,  Soonhyung KWON ,  Hyeon PARK ,  Jaeyeol BAEK ,  Minsoo KIM ,  Shinhyo BAE ,  Daeseok SONG ,  Dowon AHN

IPC: C07D251/34 ,  G03F7/11 ,  G03F7/26 ,  G03F7/16 ,  G03F7/004

Abstract: A resist underlayer composition includes (A) a polymer including a structural unit represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof; (B) a polymer including a structure in which at least one moiety represented by Chemical Formula 3 or Chemical Formula 4 and a moiety represented by Chemical Formula 7 are bound to each other; and (C) a solvent:

公开(公告)号：US20250053091A1

公开(公告)日：2025-02-13

申请号：US18778795

申请日：2024-07-19

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Ahra CHO ,  Yoojeong CHOI ,  Jaeyeol BAEK ,  Soonhyung KWON ,  Hwayoung JIN ,  Seongjin KIM

IPC: G03F7/09 ,  G03F7/004 ,  G03F7/039

Abstract: Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof, a photoacid generator having a mass reduction rate of about 0% after 3 minutes from the time of measurement during thermogravimetric analysis (TGA) at 205° C. in an air atmosphere (air gas), and a solvent. The definitions of Chemical Formula 1 and Chemical Formula 2 are as described in the specification.

公开(公告)号：US20210240082A1

公开(公告)日：2021-08-05

申请号：US17153095

申请日：2021-01-20

Applicant: Samsung SDI Co., Ltd.

Inventor： Jaeyeol BAEK ,  Soonhyung KWON ,  Minsoo KIM ,  Hyeon PARK ,  Shinhyo BAE ,  Daeseok SONG ,  Yoojeong CHOI

IPC: G03F7/11 ,  G03F7/26 ,  G03F7/004 ,  G03F7/16 ,  C07D251/32

Abstract: A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.

公开(公告)号：US20250068076A1

公开(公告)日：2025-02-27

申请号：US18776047

申请日：2024-07-17

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Seongjin KIM ,  Jaeyeol BAEK ,  Soonhyung KWON ,  Byeonggyu HWANG ,  Hwayoung JIN ,  Eunsu LEE ,  Ahra CHO ,  Yoojeong CHOI ,  Sungwoo JUNG

IPC: G03F7/11 ,  C08G73/06 ,  C09D179/04

Abstract: Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. The definitions of Chemical Formula 1 are as described in the specification.

公开(公告)号：US20230288809A1

公开(公告)日：2023-09-14

申请号：US18006135

申请日：2021-11-11

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yoojeong CHOI ,  Soonhyung KWON ,  Minsoo KIM ,  Seongjin KIM ,  Jaeyeol BAEK ,  Hwayoung JIN ,  Hyeon PARK ,  Shinhyo BAE ,  Daeseok SONG ,  Minki CHON

IPC: G03F7/11 ,  C08G75/045 ,  C08F26/06 ,  G03F7/38

CPC classification number: G03F7/11 ,  C08G75/045 ,  C08F26/06 ,  G03F7/38

Abstract: Provided are a resist underlayer composition including a polymer having a ring backbone including two or more nitrogen atoms in a ring, a compound represented by Chemical Formula 1, and a solvent; and a method of forming patterns using the resist underlayer composition:




The definitions of Chemical Formula 1 are as described in the detailed description.

公开(公告)号：US20230103089A1

公开(公告)日：2023-03-30

申请号：US17868563

申请日：2022-07-19

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yoojeong CHOI ,  Soonhyung KWON ,  Minsoo KIM ,  Seongjin KIM ,  Jaeyeol BAEK ,  Hwayoung JIN ,  Ran NAMGUNG ,  Hyeon PARK ,  Daeseok SONG

IPC: G03F7/11 ,  C07D251/32 ,  C07D405/06 ,  C07D209/86 ,  C07D209/62 ,  C07D333/54 ,  C07D339/08 ,  C07C39/23 ,  C08K5/378 ,  C08K5/3417 ,  C08K5/45

Abstract: A resist underlayer composition including a polymer including a main chain, a side chain, or a main chain and a side chain including a heterocycle including two or more nitrogen atoms in the ring of the heterocycle, a compound including a moiety represented by Chemical Formula 1, and a solvent is provided. A method of forming patterns using the resist underlayer composition is also provided

公开(公告)号：US20220075266A1

公开(公告)日：2022-03-10

申请号：US17419657

申请日：2020-03-23

Applicant: Samsung SDI Co., Ltd.

Inventor： Yoojeong CHOI ,  Soonhyung KWON ,  Minsoo KIM ,  Hyeon PARK ,  Shinhyo BAE ,  Jaeyeol BAEK

IPC: G03F7/11 ,  G03F7/16 ,  G03F7/004

Abstract: The present invention relates to a resist underlayer composition and a method of forming patterns using the same.
According to an embodiment, the resist underlayer composition includes a polymer including a structure represented by Chemical Formula 1 at the terminal end and a structural unit represented by Chemical Formula 2 and a structural unit represented by Chemical Formula 3 in the main chain; and a solvent.
Definitions of Chemical Formula 1 to Chemical Formula 3 are the same as described in the detailed description.

公开(公告)号：US20250130493A1

公开(公告)日：2025-04-24

申请号：US18918816

申请日：2024-10-17

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Eunsu LEE ,  Jaeyeol BAEK ,  Byeonggyu HWANG ,  Hwayoung JIN ,  Soojeung KIM ,  Seongjin KIM ,  Ahra CHO ,  Yoojeong CHOI ,  Sungwoo JUNG ,  Changmo LIM ,  Soonhyung KWON

IPC: G03F7/038 ,  C08F226/06 ,  G03F7/16

Abstract: Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, a structural unit represented by Chemical Formula 3, or a combination thereof, a compound represented by one or more selected from Chemical Formula 4 to Chemical Formula 6, and a solvent. The definitions of Chemical Formula 1 to Chemical Formula 6 are as described in the specification.

公开(公告)号：US20230273523A1

公开(公告)日：2023-08-31

申请号：US18311627

申请日：2023-05-03

Applicant: Samsung SDI Co., Ltd.

Inventor： Jaeyeol BAEK ,  Soonhyung KWON ,  Minsoo KIM ,  Hyeon PARK ,  Shinhyo BAE ,  Daeseok SONG ,  Yoojeong CHOI

IPC: G03F7/11 ,  G03F7/26 ,  C07D251/32 ,  G03F7/16 ,  G03F7/004

CPC classification number: G03F7/11 ,  G03F7/26 ,  C07D251/32 ,  G03F7/168 ,  G03F7/0045

Abstract: A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.