公开(公告)号：US20250076765A1

公开(公告)日：2025-03-06

申请号：US18794952

申请日：2024-08-05

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Daeseok SONG ,  Ran NAMGUNG ,  Kyoungjin HA ,  Hyeon PARK ,  Minsoo KIM

IPC: G03F7/11 ,  G03F7/16

Abstract: Provided are a resist topcoat composition and a method of forming patterns using the resist topcoat composition, the resist topcoat composition including a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2; at least one acidic compound selected from a sulfonic acid compound containing at least one fluorine, a sulfonimide compound containing at least one fluorine, and a carboxylic acid compound containing at least one fluorine; and a solvent.

公开(公告)号：US20240329537A1

公开(公告)日：2024-10-03

申请号：US18509184

申请日：2023-11-14

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Taegeun SEONG ,  Hyungrang MOON ,  Yoojeong CHOI ,  Wanhee LIM ,  Chungheon LEE ,  Daeseok SONG ,  Jun SAKONG

IPC: G03F7/32 ,  G03F7/004 ,  G03F7/16

CPC classification number: G03F7/32 ,  G03F7/0042 ,  G03F7/168

Abstract: A metal-containing photoresist developer composition, and a method of forming patterns including a step (e.g., an act or task) of developing using the same are provided. The metal-containing photoresist developer composition includes an organic solvent, an acid compound, and a conjugate base compound of the acid compound.

公开(公告)号：US20250076764A1

公开(公告)日：2025-03-06

申请号：US18794878

申请日：2024-08-05

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Hyeon PARK ,  Ran NAMGUNG ,  Kyoungjin HA ,  Daeseok SONG ,  Minsoo KIM

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/16

Abstract: Provided are a resist topcoat composition and a method of forming patterns using the resist topcoat composition, the resist topcoat composition including a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2, and a third structural unit represented by Chemical Formula M-3A or Chemical Formula M-3B; and a solvent.

公开(公告)号：US20240427248A1

公开(公告)日：2024-12-26

申请号：US18734967

申请日：2024-06-05

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Kyoungjin HA ,  Ran NAMGUNG ,  Hyeon PARK ,  Daeseok SONG ,  Minsoo KIM

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/16

Abstract: A resist topcoat composition and a method of forming (or providing) patterns utilizing the resist topcoat composition are provided. The resist topcoat composition includes a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2, and a third structural unit represented by Chemical Formula M-3A or Chemical Formula M-3B; and a solvent. Details about the above chemical formulas are as described in the specification.

公开(公告)号：US20210230127A1

公开(公告)日：2021-07-29

申请号：US17147308

申请日：2021-01-12

Applicant: Samsung SDI Co., Ltd.

Inventor： Yoojeong CHOI ,  Soonhyung KWON ,  Hyeon PARK ,  Jaeyeol BAEK ,  Minsoo KIM ,  Shinhyo BAE ,  Daeseok SONG ,  Dowon AHN

IPC: C07D251/34 ,  G03F7/11 ,  G03F7/26 ,  G03F7/16 ,  G03F7/004

Abstract: A resist underlayer composition includes (A) a polymer including a structural unit represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof; (B) a polymer including a structure in which at least one moiety represented by Chemical Formula 3 or Chemical Formula 4 and a moiety represented by Chemical Formula 7 are bound to each other; and (C) a solvent:

公开(公告)号：US20230288809A1

公开(公告)日：2023-09-14

申请号：US18006135

申请日：2021-11-11

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yoojeong CHOI ,  Soonhyung KWON ,  Minsoo KIM ,  Seongjin KIM ,  Jaeyeol BAEK ,  Hwayoung JIN ,  Hyeon PARK ,  Shinhyo BAE ,  Daeseok SONG ,  Minki CHON

IPC: G03F7/11 ,  C08G75/045 ,  C08F26/06 ,  G03F7/38

CPC classification number: G03F7/11 ,  C08G75/045 ,  C08F26/06 ,  G03F7/38

Abstract: Provided are a resist underlayer composition including a polymer having a ring backbone including two or more nitrogen atoms in a ring, a compound represented by Chemical Formula 1, and a solvent; and a method of forming patterns using the resist underlayer composition:




The definitions of Chemical Formula 1 are as described in the detailed description.

公开(公告)号：US20230103089A1

公开(公告)日：2023-03-30

申请号：US17868563

申请日：2022-07-19

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yoojeong CHOI ,  Soonhyung KWON ,  Minsoo KIM ,  Seongjin KIM ,  Jaeyeol BAEK ,  Hwayoung JIN ,  Ran NAMGUNG ,  Hyeon PARK ,  Daeseok SONG

IPC: G03F7/11 ,  C07D251/32 ,  C07D405/06 ,  C07D209/86 ,  C07D209/62 ,  C07D333/54 ,  C07D339/08 ,  C07C39/23 ,  C08K5/378 ,  C08K5/3417 ,  C08K5/45

Abstract: A resist underlayer composition including a polymer including a main chain, a side chain, or a main chain and a side chain including a heterocycle including two or more nitrogen atoms in the ring of the heterocycle, a compound including a moiety represented by Chemical Formula 1, and a solvent is provided. A method of forming patterns using the resist underlayer composition is also provided

公开(公告)号：US20230024422A1

公开(公告)日：2023-01-26

申请号：US17746811

申请日：2022-05-17

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Hyeon PARK ,  Minsoo KIM ,  Daeseok SONG ,  Minki CHON ,  Jun Soo KIM ,  Hyun-Woo KIM ,  Hyun-Ji SONG ,  Young Joo CHOI ,  Suk-Koo HONG

IPC: C09D133/08 ,  C09D133/16 ,  C07C309/80 ,  C07C53/18 ,  C07C53/21 ,  C07C53/23

Abstract: A resist topcoat composition includes an acrylic polymer including a structural unit containing a hydroxy group and a fluorine; a mixture including a sulfonic acid compound containing at least one fluorine and a carboxylic acid compound containing at least one fluorine in a weight ratio of about 1:0.1 to about 1:50; and a solvent. A method of forming patterns uses the resist topcoat composition to form a topcoat over a patterned substrate.

公开(公告)号：US20240393692A1

公开(公告)日：2024-11-28

申请号：US18624406

申请日：2024-04-02

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Hyeon PARK ,  Ran NAMGUNG ,  Kyoungjin HA ,  Daeseok SONG ,  Minsoo KIM

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/14

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition are provided. The resist topcoat composition includes a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2, and a third structural unit including at least one of structural units represented by Chemical Formula M-3A, Chemical Formula M-3B, Chemical Formula M-3C, and Chemical Formula M-3D; and a solvent.

公开(公告)号：US20230026579A1

公开(公告)日：2023-01-26

申请号：US17733743

申请日：2022-04-29

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Shinhyo BAE ,  Hyeon PARK ,  Daeseok SONG ,  Minki CHON ,  Jun Soo KIM ,  Hyun-Woo KIM ,  Hyun-Ji SONG ,  Young Joo CHOI ,  Suk-Koo HONG

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/16 ,  H01L21/027 ,  H01L21/311

Abstract: A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.