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公开(公告)号：US20240393684A1
公开(公告)日：2024-11-28
申请号：US18617447
申请日：2024-03-26
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Jongpil HO , Hyungrang MOON , Seung HAN , Taeho KIM , Gyeong Ryeong BAK , Si-Kyun PARK , Taeksoo KWAK , Gyeonghun PARK , Myoungsoo SONG , Jin-Hee BAE , Minsoo KIM
Abstract: Provided is a method of forming patterns which includes coating a metal-containing resist composition on a substrate; drying and heating to form a metal-containing resist film on the substrate; exposing the metal-containing resist film using a patterned mask; and coating a developer composition to remove unexposed regions to form a resist pattern A thickness of the resist film after development is increased by about 5 to about 100% compared to the thickness of the resist film before development, and
a surface of the resist film after the development may include about 5 to about 20 at % of at least one selected from a phosphorus element and a sulfur element, based on the total number of atoms.-
公开(公告)号：US20190189430A1
公开(公告)日：2019-06-20
申请号：US16163170
申请日：2018-10-17
Applicant: Samsung SDI Co., Ltd.
Inventor： Jin-Hee BAE , Taeksoo KWAK , Byeonggyu HWANG , Kunbae NOH , Jun SAKONG , Jinwoo SEO , Junyoung JANG
IPC: H01L21/02 , C01B21/068 , C09D183/16
Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)−(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).
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公开(公告)号：US20240393698A1
公开(公告)日：2024-11-28
申请号：US18627133
申请日：2024-04-04
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Si-Kyun PARK , Minsoo KIM , Jin-Hee BAE , Hyungrang MOON , Taeksoo KWAK , Jongpil HO , Dong Wan RYU , Ahra CHO , Myoungsoo SONG , Gyeonghun PARK , Jin Hee CHOI
Abstract: A composition configured for removing edge beads from metal-containing resists and/or as a developer composition of metal-containing resists is water-free and includes an organic solvent and at least one additive selected from among an amino acid-based compound, a sulfur-containing acid compound, and a sulfur-containing amine-based compound. A method of forming patterns using the composition includes coating a metal-containing resist composition on a substrate; coating the composition configured for removing edge beads from metal-containing resists of the present embodiments along edges of the substrate; drying and heating to form a metal-containing resist film on the substrate; exposing the metal-containing photoresist film; and developing the metal-containing resist film with the developer composition of metal-containing resists.
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公开(公告)号：US20170092488A1
公开(公告)日：2017-03-30
申请号：US15178378
申请日：2016-06-09
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Jiho LEE , Kunbae NOH , Huichan YUN , Jin-Hee BAE , Wanhee LIM
IPC: H01L21/02
CPC classification number: H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/02307 , H01L21/02337
Abstract: A method of manufacturing a silica layer includes: coating a pre-wetting liquid material including a carbon compound on a substrate; coating a composition for forming a silica layer on the substrate coated with the pre-wetting liquid material; and curing a substrate coated with the composition for forming a silica layer.
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公开(公告)号：US20250044696A1
公开(公告)日：2025-02-06
申请号：US18784565
申请日：2024-07-25
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Taeho KIM , Minsoo KIM , Hyungrang MOON , Si-Kyun PARK , Jin-Hee BAE , Seung HAN , Jongpil HO , Gyeong Ryeong BAK , Myoungsoo SONG , Gyeonghun PARK
Abstract: A composition for removing edge beads from metal-containing resists, a developer composition of metal-containing resists, and methods of forming patterns using the same are disclosed. The composition according to one or more embodiments includes a C1 to C10 carboxylic acid compound substituted with at least one fluorine; and an organic solvent.
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Patent Agency Ranking
公开(公告)号：US20240393694A1
公开(公告)日：2024-11-28
申请号：US18658892
申请日：2024-05-08
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Hyungrang MOON , Jongpil HO , Taeho KIM , Seung HAN , Gyeonghun PARK , Myoungsoo SONG , Taeksoo KWAK , Si-Kyun PARK , Jin-Hee BAE , Minsoo KIM
IPC: G03F7/16
Abstract: A metal-containing photoresist developer composition includes an organic solvent, and a sulfonimide-based compound. A method of forming patterns utilizing the developer composition includes: coating a metal-containing resist composition on a substrate; coating a composition for removing edge beads from a metal-containing resist along an edge of the substrate; drying and heating the resultant to form a metal-containing resist layer on the substrate; exposing the metal-containing resist layer; and coating the metal-containing photoresist developer composition and developing the metal-containing photoresist developer composition.
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公开(公告)号：US20210053832A1
公开(公告)日：2021-02-25
申请号：US16987981
申请日：2020-08-07
Applicant: Samsung SDI Co., Ltd.
Inventor： Jin-Hee BAE , Taeksoo KWAK , Myungho KANG , Seungwoo JANG , Kunbae NOH
IPC: C01B33/12 , C09D1/00 , C09D7/20 , C01B21/087 , H01L27/12
Abstract: Provided are a composition for forming a silica layer including a silicon-containing polymer and a solvent, wherein when adding 70 g of the composition for forming the silica layer to a 100 ml container, leaving it at 40° C. for 28 days, and taking 1 ml of gas generated from the composition, 1 ml of the gas includes hydrogen gas (H2), silane gas (SiH4), and ammonia gas (NH3), and the hydrogen gas, silane gas, and ammonia gas satisfy Equation 1: [(hydrogen gas amount (ppm))/(silane gas amount (ppm)+ammonia gas amount (ppm))≥1.5], a silica layer manufactured therefrom, and an electronic device including the silica layer.
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8.发明申请公开(公告)号：US20200369915A1
公开(公告)日：2020-11-26
申请号：US16645343
申请日：2018-02-13
Applicant: Samsung SDI Co., Ltd.
Inventor： Kunbae NOH , Taeksoo KWAK , Junyoung JANG , Yoonyoung KOO , Yonggoog KIM , Jingyo KIM , Jin-Hee BAE , Jun SAKONG , Jinwoo SEO , Sooyeon SIM , Huichan YUN , Jiho LEE , Kwen-Woo HAN , Byeong Gyu HWANG
IPC: C09D183/16 , H01L21/306 , H01L21/02
Abstract: Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.
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9.发明申请公开(公告)号：US20180204730A1
公开(公告)日：2018-07-19
申请号：US15704054
申请日：2017-09-14
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Huichan YUN , TaekSoo KWAK , Jin-Hee BAE , Jinwoo SEO , Kunbae NOH , Junyoung JANG
IPC: H01L21/308 , H01L21/311 , H01L21/3213 , H01L21/033
CPC classification number: H01L21/3086 , H01L21/02115 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/0337 , H01L21/3081 , H01L21/31144 , H01L21/32139
Abstract: A method of forming patterns, patterns formed according to the method, and a semiconductor device including the patterns, the method including forming an etching subject layer on a substrate, forming a first layer on the etching subject layer such that the first layer has a projecting pattern, forming a second layer such that the second layer completely covers the projecting pattern of the first layer, partially removing the second layer such that a top of the projecting pattern is exposed and a patterned second layer remains at a side of the projecting pattern, removing the first layer such that a top of the etching subject layer is exposed, and etching the etching subject layer using the patterned second layer as an etching mask, wherein one of the first layer and the second layer is a carbon-containing layer and the other is a silicon-containing layer, and the silicon-containing layer is formed by coating a silicon-containing composition and heat-treating the same.
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公开(公告)号：US20250123568A1
公开(公告)日：2025-04-17
申请号：US18828854
申请日：2024-09-09
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Seung HAN , Hyungrang MOON , Taeho KIM , Jongpil HO , Jin-Hee BAE , Miyeon HAN
Abstract: Provided are a composition selected from a composition for removing edge beads from metal-containing resists and a developer composition of metal-containing resists, and a method of forming patterns using the same, the composition includes a compound including at least two ketone groups; and an organic solvent including at least one selected from an acetate-based solvent and an alcohol-based solvent, wherein the compound including at least two ketone groups is included in an amount of about 10 to about 70 wt % based on the total weight of the composition, and the organic solvent is included in an amount of about 30 to about 90 wt % based on a total weight of the composition.
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