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公开(公告)号：US4573213A
公开(公告)日：1986-02-25
申请号：US507886
申请日：1983-06-27
申请人： Samuel Dixon, Jr. , Harold Jacobs
发明人： Samuel Dixon, Jr. , Harold Jacobs
CPC分类号： H03B9/14 , H03D9/0608 , H03B2200/0074
摘要： A dual Gunn self-oscillating mixer is shown which can mix signals in the range substantially without introducing any noise and with high input signal power handling capacity and with higher output mixed signal power than conventional, owing to boosted power from more than one microwave cavity. The device is comprised of two cavities and connected by a 180.degree. phase shift coax line for injection locking, or a cavity wall hole in yet another embodiment. The device handles larger power levels without burning out as compared to conventional type mixer devices such as Schottky barrier diodes having nearly 30 times the burnout susceptibility.
摘要翻译： 显示了双重Gunn自振荡混频器，可以在VHF范围内混合信号，而不会引入任何噪声和高输入信号功率处理能力，并具有比传统的更高输出混合信号功率，由于来自多个微波腔的增强功率 。 该装置由两个腔体组成，并通过用于注射锁定的180°相移同轴线连接，或者在另一个实施例中由腔壁孔连接。 与常规型混合器器件相比，器件处理更大的功率电平而不会烧坏，例如肖特基势垒二极管具有近30倍的烧损敏感性。
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公开(公告)号：US4344047A
公开(公告)日：1982-08-10
申请号：US233751
申请日：1981-02-12
申请人： Samuel Dixon, Jr.
发明人： Samuel Dixon, Jr.
IPC分类号： H01L29/868 , H03G11/02 , H01P1/15 , H01L27/06 , H01P3/16
CPC分类号： H03G11/025 , H01L29/868
摘要： Disclosed is a millimeter wave bulk effect RF power limiter consisting of alanar PIN diode formed on a gallium arsenide (GaAs) substrate which also comprises the waveguide structure for RF energy in the 60-300 GHz range. The PIN diode is comprised of a wedge of intrinsic type semiconductor material formed across the top surface of the substrate and having mutually opposing regions of p and n type semiconductor material fabricated in the side edges of the wedge to which is attached planar beam leads. With suitable electrical operating potentials applied to the PIN diode avalanche breakdown occurs at a critical RF power level which acts to limit the flow of RF energy flow in the structure past the location of the PIN diode. Such a structure permits the device to be integrated into the front end sections of receivers utilized in communications, missile guidance and radar systems operable in the millimeter and sub-millimeter frequency range.
摘要翻译： 公开了一种由在砷化镓（GaAs）衬底上形成的平面PIN二极管组成的毫米波体积效应RF功率限制器，其还包括在60-300GHz范围内的RF能量的波导结构。 PIN二极管由跨越衬底的顶表面形成的本征型半导体材料的楔形物组成，并且在楔形物的侧边缘中制造的相互对置的p型和n型半导体区域，其中附着有平面光束引线。 在施加到PIN二极管的适当的电气操作电位下，雪崩击穿发生在关键的RF功率水平，其作用是限制结构中超过PIN二极管位置的RF能量流的流动。 这种结构允许该装置集成在可在毫米和亚毫米频率范围内操作的通信，导弹引导和雷达系统中使用的接收器的前端部分中。
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公开(公告)号：US4342010A
公开(公告)日：1982-07-27
申请号：US153299
申请日：1980-05-27
申请人： Samuel Dixon, Jr. , Harold Jacobs
发明人： Samuel Dixon, Jr. , Harold Jacobs
CPC分类号： H03G11/006
摘要： A dielectric waveguide power limiter for a self-oscillating mixer operatingn millimeter-wave frequencies. The limiter includes a high resistivity silicon dielectric waveguide and a Gunn oscillator. A plurality of dielectric resonators each including a high uniaxial anisotropy ferrite sphere embedded therein are positioned between the power input end of the waveguide and the Gunn oscillator.
摘要翻译： 一种用于在毫米波频率上工作的自振荡混频器的介质波导功率限制器。 限幅器包括高电阻率硅介质波导和Gunn振荡器。 在波导的功率输入端和耿氏振荡器之间，分别包含嵌入其中的高单轴各向异性铁素体球的多个介质谐振器。
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公开(公告)号：US4864645A
公开(公告)日：1989-09-05
申请号：US199819
申请日：1988-05-26
CPC分类号： H03D9/0633 , H03B19/18
摘要： A microwave mixer suitable for millimeter wave radar applications. A semi-insulating gallium arsenide dielectric waveguide structure contains an embedded planar doped barrier (PDB) structure as a non-linear mixing element. The local oscillator (LO) signal is guided to the PDB structure via a coplanar type waveguide. The radio frequency (RF) signal is guided to the PDB structure via an image guide and a microstrip circuit serves to transmit the intermediate frequency (IF).
摘要翻译： 适用于毫米波雷达应用的微波搅拌器。 半绝缘砷化镓电介质波导结构包含作为非线性混合元件的嵌入式平面掺杂阻挡层（PDB）结构。 本地振荡器（LO）信号通过共面型波导引导到PDB结构。 射频（RF）信号经由图像引导器被引导到PDB结构，微带电路用于传输中频（IF）。
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公开(公告)号：US4563773A
公开(公告)日：1986-01-07
申请号：US588612
申请日：1984-03-12
申请人： Samuel Dixon, Jr. , Roger J. Malik
发明人： Samuel Dixon, Jr. , Roger J. Malik
CPC分类号： H03D9/0641 , H03D2200/0017
摘要： A single planar doped barrier diode is grown by the selective deposition of gallium arsenide using molecular beam epitaxy (MBE) in the center of a gallium arsenide dielectric waveguide member mounted on a ground plane. The waveguide member includes two portions which extend in opposite directions and terminating in respective metal to dielectric waveguide transition sections which are coupled to an RF input signal and local oscillator signal, respectively. The planar doped barrier diode operates as an intrinsic subharmonic mixer and accordingly the local oscillator signal has frequency of one half the input signal frequency. An IF output signal is coupled from the mixer diode to a microstrip transmission line formed on an insulating layer fabricated on the ground plane. Dielectric waveguide isolators are additionally included on the dielectric waveguide segments to mutually isolate the input signal and local oscillator signal. A monolithic form of circuit fabrication is thus provided which allows the planar doped barrier mixer circuit to be extremely small and the cost of mass producing such a circuit to be very economical.
摘要翻译： 通过使用分子束外延（MBE）在安装在接地平面上的砷化镓电介质波导部件的中心选择性沉积砷化镓来生长单个平面掺杂势垒二极管。 波导构件包括两个部分，这两个部分在相反的方向上延伸并终止于分别与RF输入信号和本地振荡器信号耦合的电介质波导过渡部分的相应金属。 平面掺杂势垒二极管作为内部次谐波混频器工作，因此本地振荡器信号具有输入信号频率的一半的频率。 IF输出信号从混频器二极管耦合到形成在制造在接地平面上的绝缘层上的微带传输线。 电介质波导隔离器还包括在电介质波导段上，以相互隔离输入信号和本地振荡器信号。 因此，提供了一种单片形式的电路制造，其允许平面掺杂阻挡混合器电路非常小，并且大量生产这种电路的成本非常经济。
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公开(公告)号：US4509009A
公开(公告)日：1985-04-02
申请号：US496165
申请日：1983-05-19
CPC分类号： G01R29/0878
摘要： A radiation measurement means is shown which has the capability of detect radiation in both the millimeter wave, and the infrared, frequency regions. A basic self-oscillating Gunn diode is enclosed in a donut shaped silicon ring. The presence of infrared energy will create holes and electrons in the silicon material, altering its conductivity, and lower the power of oscillation. The realized drop in oscillating power identifies the infrared. Millimeter wave radiation is detected because an intermediate frequency is generated as the Gunn diode operates as a self-oscillating mixer of the new different frequency with its own oscillating frequency. Thus it is possible to detect signals from both ranges, in a single device.
摘要翻译： 示出了具有在毫米波和红外线频率区域中检测辐射的能力的辐射测量装置。 基本的自振荡耿氏二极管封装在环形硅环中。 红外能量的存在将在硅材料中产生空穴和电子，改变其导电性，并降低振荡的功率。 实现的振荡功率下降标识红外线。 检测到毫米波辐射，因为当耿氏二极管作为具有其自己的振荡频率的新不同频率的自振荡混频器工作时产生中频。 因此，可以在单个设备中检测来自两个范围的信号。
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公开(公告)号：US4654609A
公开(公告)日：1987-03-31
申请号：US705267
申请日：1985-02-25
IPC分类号： H01L29/36 , H01L29/861 , H03G11/02 , H01P1/22
CPC分类号： H03G11/025 , H01L29/365 , H01L29/8618
摘要： A passive millimeter wave image guide power limiter comprising a length ofielectric transmission line or waveguide for millimeter wave frequencies located on a relatively thin conductive ground plane forming thereby an image guide and including a planar doped barrier diode structure formed in the dielectric transmission line with the planar doped barrier structure being integrally grown in a slot milled in the constituent material, i.e. gallium arsenide, of the waveguide transversely across the width dimension thereof so as to be oriented perpendicular to the flow of RF power being propagated along its length dimension. The planar doped barrier structure becomes conductive at a predetermined power level to reflect any further incident RF power back toward the power source.
摘要翻译： 一种无源毫米波图像引导功率限制器，其包括位于相对薄的导电接地平面上的毫米波频率的介电传输线或波导的长度，从而形成图像引导件，并且包括形成在电介质传输线中的平面掺杂阻挡二极管结构， 平面掺杂阻挡结构整体生长在波导管的构成材料（即砷化镓）中铣削的槽中，横向穿过其宽度尺寸，以便垂直于沿着其长度尺寸传播的RF功率的流动。 平面掺杂阻挡结构以预定的功率电平变为导通，以将进一步的入射RF功率反射回电源。
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公开(公告)号：US4554680A
公开(公告)日：1985-11-19
申请号：US519154
申请日：1983-08-01
申请人： Harold Jacobs , Samuel Dixon, Jr.
发明人： Harold Jacobs , Samuel Dixon, Jr.
CPC分类号： H03D9/0616
摘要： A triple Gunn diode self-oscillating mixer system is shown which can mix nals in the VHF range substantially without introducing any noise and with high input signal power handling capacity and with higher output mixed signal power than conventional, owing to boosted power from more than one microwave cavity. The device is comprised of three self-oscillating Gunn diode cavities connected by 180.degree. phase shift coax lines for injection locking. The device handles larger power levels without burnout as compared to conventional mixer devices such as Schottky barrier diodes having nearly 30 times less burnout capacity.
摘要翻译： 示出了三重Gunn二极管自振荡混频器系统，其可以在VHF范围内混合信号，而不会引入任何噪声和高输入信号功率处理能力，并且具有比常规的更高的输出混合信号功率，这是由于来自多于一个 微波腔。 该器件由三个自振荡耿氏二极管腔组成，由180°相移同轴电缆连接，用于注入锁定。 与传统的混频器器件相比，该器件处理更大的功率电平而不会烧坏，例如肖特基势垒二极管具有近30倍的烧断能力。
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9.发明授权Millimeter wave image guide band reject filter and mixer circuit using the same 失效毫米波图像引导带滤波器和混频器电路使用相同
公开(公告)号：US4545073A
公开(公告)日：1985-10-01
申请号：US582193
申请日：1984-02-21
申请人： Samuel Dixon, Jr.
发明人： Samuel Dixon, Jr.
CPC分类号： H03D9/0616 , H03D7/18
摘要： A magnetically tuned band reject filter for millimeter wave frequencies crising a barium ferrite sphere embedded in the upper surface of a semi-insulating gallium arsenide waveguide transmission line element located on a conductive ground plane and forming thereby an image guide. A pair of high energy rare earth permanent magnets are located on the upper and lower surfaces of the waveguide element at the location of the ferrite sphere with a single tuning coil surrounding both the magnets and the waveguide and operates to bias the ferrite sphere for selective absorption of signals propagating along the transmission line. With the magnetically tuned ferrite sphere located therebetween, both an input signal and a local oscillator signal, for example, are coupled to one end of the waveguide element while receiving electronics apparatus, such as a Schottky barrier diode mixer, is located at the other end of the waveguide element.
摘要翻译： 一种用于毫米波频率的磁调谐带阻滤波器，包括嵌入在导电接地平面上的半绝缘砷化镓波导传输线元件的上表面中的钡铁氧体球，并由此形成图像引导件。 一对高能稀土永磁体位于铁氧体球位于波导元件的上表面和下表面上，单个调谐线圈包围磁体和波导，并操作以偏置铁氧体球以进行选择吸收 的信号沿传输线传播。 在磁调谐的铁氧体球位于其间，输入信号和本地振荡器信号例如耦合到波导元件的一端，而接收诸如肖特基势垒二极管混频器的电子设备位于另一端 的波导元件。
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公开(公告)号：USH1081H
公开(公告)日：1992-07-07
申请号：US638725
申请日：1991-01-02
申请人： Samuel Dixon, Jr.
发明人： Samuel Dixon, Jr.
CPC分类号： H04B1/26 , H03D9/0633
摘要： A monolithic millimeter wave balanced mixer in which two Schottky barrier odes receive combined power from. Two Schottky barrier diodes receive combined power from an RF source and local oscillator in a gallium arsenide image guide. The diodes produce an intermediate frequency which is directed to a microstrip low pass filter.
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