公开(公告)号：US20160343722A1

公开(公告)日：2016-11-24

申请号：US14718746

申请日：2015-05-21

申请人： SANDISK TECHNOLOGIES INC.

发明人： Takashi Kashimura ,  Sayako Nagamine

IPC分类号： H01L27/115 ,  H01L21/28 ,  H01L29/51

CPC分类号： H01L27/11521 ,  H01L27/11524 ,  H01L29/40114 ,  H01L29/513

摘要： A non-volatile memory device is provided that includes a gap in one of the layers of the inter-gate dielectric. One embodiment comprises a plurality of active areas, isolation regions between the active areas, a tunnel oxide layer above the active areas, a floating gate layer above the tunnel oxide layer, a control gate layer above the floating gate layer, and an inter-gate dielectric between the control gate layer and the floating gate layer. The inter-gate dielectric, which in one embodiment includes a SiN layer, is positioned above the isolation regions with gaps in the SiN layer over the isolation regions. Processes for manufacturing are also disclosed.

摘要翻译： 提供了一种非易失性存储器件，其包括在栅极间电介质的一个层中的间隙。 一个实施例包括多个有源区域，有源区域之间的隔离区域，有源区域上方的隧道氧化物层，隧道氧化物层上方的浮动栅极层，浮置栅极层上方的控制栅极层以及栅极间栅极 控制栅层与浮栅之间的电介质。 在一个实施例中包括SiN层的栅极间电介质位于隔离区上方，隔离区上方有SiN层中的间隙。 还公开了制造方法。

公开(公告)号：US09281314B1

公开(公告)日：2016-03-08

申请号：US14511834

申请日：2014-10-10

申请人： SanDisk Technologies Inc.

发明人： Takashi Kashimura ,  Xiaolong Hu ,  Sayako Nagamine ,  Yusuke Yoshida ,  Hiroaki Iuchi ,  Akira Nakada ,  Kazutaka Yoshizawa

IPC分类号： H01L29/792 ,  H01L21/336 ,  H01L27/115 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/285 ,  H01L21/28 ,  H01L21/02 ,  H01L21/764 ,  H01L21/311

CPC分类号： H01L27/1157 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L27/11524 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792 ,  H01L2924/0002 ,  H01L2924/00

摘要： Non-volatile storage devices and methods for fabricating non-volatile storage device are described. Sidewalls of the memory cells and their associated word line may be covered with silicon oxide. Silicon nitride covers the silicon oxide adjacent to the word lines, which may provide protection for the word lines during fabrication. However, silicon nitride can trap charges, which can degrade operation if the trapped charges are near a charge trapping region of a memory cell. Thus, the silicon nitride does not cover the silicon oxide adjacent to charge storage regions of the memory cells, which can improve device operation. For example, memory cell current may be increased. Techniques for forming such a device are also disclosed. One aspect includes a method that uses a sacrificial material to control formation of a silicon nitride layer when forming a memory device.

摘要翻译： 描述了用于制造非易失性存储装置的非易失性存储装置和方法。 存储器单元的侧壁及其相关联的字线可以用氧化硅覆盖。 氮化硅覆盖与字线相邻的氧化硅，这可以在制造期间为字线提供保护。 然而，氮化硅可以捕获电荷，如果捕获的电荷接近存储器单元的电荷捕获区域，则可能降低操作。 因此，氮化硅不覆盖与存储单元的电荷存储区域相邻的氧化硅，这可以改善器件工作。 例如，可以增加存储单元电流。 还公开了用于形成这种装置的技术。 一个方面包括在形成存储器件时使用牺牲材料来控制氮化硅层的形成的方法。