公开(公告)号：US11869600B2

公开(公告)日：2024-01-09

申请号：US17689188

申请日：2022-03-08

Applicant: SanDisk Technologies LLC

Inventor： Jiawei Xu ,  Anirudh Amarnath ,  Hiroki Yabe

IPC: G11C16/26 ,  G11C16/10 ,  G11C16/04

CPC classification number: G11C16/26 ,  G11C16/0483 ,  G11C16/10

Abstract: Memory cell sensing by charge sharing between two sense nodes is disclosed. A first sense node and a second sense node are pre-charged and the second node is discharged initiating charge sharing between the first sense node and the second sense node that results in an improved sense margin. Sensing circuitry disclosed herein may include one or more pre-charge circuits, sense enable circuits, and charge-sharing circuits. The increased sense margin achieved by sensing circuitry disclosed herein provides better noise immunity and more accurate sensing results.