公开(公告)号：US20210389879A1

公开(公告)日：2021-12-16

申请号：US16903196

申请日：2020-06-16

Applicant: SanDisk Technologies LLC

Inventor： Karin Inbar ,  Sahil Sharma ,  Grishma Shah

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/10

Abstract: For a non-volatile memory system with a multi-plane memory die having a large block size, to be able to more readily accommodate zone-based host data using zones that are of a smaller size that the block size on the memory, the memory system assigns data from different zones to different subsets of the planes of a common memory die. The memory system is configured to accumulate the data from the different zones into different write queues and then assemble the data from the different write zones into pages or partial pages of data that can be simultaneously programmed into memory cells connected to different word lines that are in different sub-blocks of different blocks in the corresponding assigned planes of the die.

公开(公告)号：US09817593B1

公开(公告)日：2017-11-14

申请号：US15207212

申请日：2016-07-11

Applicant: SanDisk Technologies LLC

Inventor： Karin Inbar ,  Einat Lev ,  Michael Yonin

IPC: G11C11/34 ,  G06F3/06 ,  G11C16/10 ,  G11C14/00 ,  G11C16/26

CPC classification number: G06F3/0619 ,  G06F3/064 ,  G06F3/065 ,  G06F3/0659 ,  G06F3/0679 ,  G11C11/5628 ,  G11C14/00 ,  G11C16/10 ,  G11C16/26

Abstract: In a non-volatile memory system, the controller maintains in its volatile memory two free block lists for the assignment of memory circuit blocks when writing user and system data. Copies of the free block lists are maintained in the non-volatile memory. While allocating blocks from a first of the free block lists, the controller can update a second of the free block lists as part of a control sync operation preparing control data stored in non-volatile memory. This allows the memory system to operate in a non-blocking manner during the control sync. Once the second free block lists is prepared and the control sync completed, the second block can subsequently be used for block allocations and a control sync operation can be done to update the first block.

公开(公告)号：US11789612B2

公开(公告)日：2023-10-17

申请号：US16903196

申请日：2020-06-16

Applicant: SanDisk Technologies LLC

Inventor： Karin Inbar ,  Sahil Sharma ,  Grishma Shah

IPC: G06F3/06

CPC classification number: G06F3/0611 ,  G06F3/064 ,  G06F3/0656 ,  G06F3/0679

Abstract: For a non-volatile memory system with a multi-plane memory die having a large block size, to be able to more readily accommodate zone-based host data using zones that are of a smaller size that the block size on the memory, the memory system assigns data from different zones to different subsets of the planes of a common memory die. The memory system is configured to accumulate the data from the different zones into different write queues and then assemble the data from the different write zones into pages or partial pages of data that can be simultaneously programmed into memory cells connected to different word lines that are in different sub-blocks of different blocks in the corresponding assigned planes of the die.