公开(公告)号：US20180307503A1

公开(公告)日：2018-10-25

申请号：US15496490

申请日：2017-04-25

Applicant: SanDisk Technologies LLC

Inventor： Uri Peltz ,  Amir Hadar ,  Mark Shlick ,  Mark Murin

IPC: G06F9/44 ,  G06F13/16 ,  G06F12/02

CPC classification number: G06F9/4418 ,  G06F12/0246 ,  G06F13/161 ,  G06F13/1673 ,  G06F2212/7201 ,  G06F2212/7203

Abstract: A device or apparatus may be configured to perform memory operations on a memory die while a current multi-level cell programming operation is being performed. In the event that a controller identifies pending memory operations to be performed in the memory die, the controller may communicate with the memory die to determine a status of auxiliary latches of the memory die. Depending on the status, the controller may determine if the memory die is in a suspend/resume period and/or which pending memory operations to have performed.

公开(公告)号：US11373710B1

公开(公告)日：2022-06-28

申请号：US17165703

申请日：2021-02-02

Applicant: SanDisk Technologies LLC

Inventor： Hua-Ling Cynthia Hsu ,  Yu-Chung Lien ,  Mark Murin ,  Mark Shlick

IPC: G11C5/14 ,  G11C16/30 ,  G11C16/08 ,  G11C8/18 ,  G11C7/22 ,  G11C11/4076 ,  G11C16/10

Abstract: Time division peak power management in non-volatile memory systems is disclosed. The memory system has a memory controller and a number of semiconductor dies. Each die is assigned a time slot in which to perform high current portions of memory operations. The memory controller provides an external clock to each die. Each die tracks repeating time slots based on the external clock. The memory controller may synchronize this tracking. If a die is about to perform a high current portion of a memory operation, the die checks to determine if its allocated slot has been reached. If not, the die halts the memory operation until its allocated time slot is reached. When the allocated time slot is reached, the halted memory operation is resumed at the high current portion. Therefore, the high current portion of the memory operation occurs during the allocated time slot.

公开(公告)号：US11226772B1

公开(公告)日：2022-01-18

申请号：US16912381

申请日：2020-06-25

Applicant: SanDisk Technologies LLC

Inventor： Yu-Chung Lien ,  Mark Murin ,  Hua-Ling Cynthia Hsu ,  Tomer Eliash ,  Huai-Yuan Tseng ,  Deepanshu Dutta

IPC: G06F3/06 ,  G11C16/10 ,  G11C16/32 ,  H01L25/065 ,  G11C16/04

Abstract: Power and/or current regulation in non-volatile memory systems is disclosed. Peak power/current usage may be reduced by staggering concurrent program operations in the different semiconductor dies. Each set of one or more semiconductor dies has an earliest permitted start time for its program operation, as well as a number of permitted backup start times. The permitted start times are unique for each set of one or more semiconductor dies. There may be a uniform gap or delay between each permitted start time. If a semiconductor die is busy with another memory operation at or after its earliest permitted start time, then the program operation is initiated or resumed at one of the permitted backup times. By having permitted backup times, the memory system need not poll each semiconductor die to determine whether the semiconductor die is ready/busy in order to determine when a die should start a program operation.

公开(公告)号：US20210405920A1

公开(公告)日：2021-12-30

申请号：US16912381

申请日：2020-06-25

Applicant: SanDisk Technologies LLC

Inventor： Yu-Chung Lien ,  Mark Murin ,  Hua-Ling Cynthia Hsu ,  Tomer Eliash ,  Huai-Yuan Tseng ,  Deepanshu Dutta

IPC: G06F3/06 ,  G11C16/10 ,  G11C16/32 ,  H01L25/065

Abstract: Power and/or current regulation in non-volatile memory systems is disclosed. Peak power/current usage may be reduced by staggering concurrent program operations in the different semiconductor dies. Each set of one or more semiconductor dies has an earliest permitted start time for its program operation, as well as a number of permitted backup start times. The permitted start times are unique for each set of one or more semiconductor dies. There may be a uniform gap or delay between each permitted start time. If a semiconductor die is busy with another memory operation at or after its earliest permitted start time, then the program operation is initiated or resumed at one of the permitted backup times. By having permitted backup times, the memory system need not poll each semiconductor die to determine whether the semiconductor die is ready/busy in order to determine when a die should start a program operation.

公开(公告)号：US10360045B2

公开(公告)日：2019-07-23

申请号：US15496490

申请日：2017-04-25

Applicant: SanDisk Technologies LLC

Inventor： Uri Peltz ,  Amir Hadar ,  Mark Shlick ,  Mark Murin

IPC: G06F9/4401 ,  G06F12/02 ,  G06F13/16

Abstract: A device or apparatus may be configured to perform memory operations on a memory die while a current multi-level cell programming operation is being performed. In the event that a controller identifies pending memory operations to be performed in the memory die, the controller may communicate with the memory die to determine a status of auxiliary latches of the memory die. Depending on the status, the controller may determine if the memory die is in a suspend/resume period and/or which pending memory operations to have performed.