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1.发明公开公开(公告)号：US20230420053A1
公开(公告)日：2023-12-28
申请号：US17846452
申请日：2022-06-22
Applicant: SanDisk Technologies LLC
Inventor： Xuan Tian , Henry Chin , Liang Li , Vincent Yin , Wei Zhao , Tony Zou
CPC classification number: G11C16/14 , G11C16/0483 , G11C16/24 , G11C16/08 , G11C16/26 , G11C16/349 , G11C29/50004 , H01L27/11556
Abstract: The memory device includes a memory block with an array of memory cells. The memory device also includes control circuitry that is in communication with the memory cells. The control circuitry is configured to program a group of the memory cells in a programming operation that does not include verify to obtain a natural threshold voltage (nVt) distribution, calculate an nVt width of the nVt distribution, compare the nVt width to a threshold, and identify the memory block as being vulnerable to cross-temperature read errors in response to the nVt width exceeding the threshold.
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2.发明授权公开(公告)号：US11972804B2
公开(公告)日：2024-04-30
申请号：US17846452
申请日：2022-06-22
Applicant: SanDisk Technologies LLC
Inventor： Xuan Tian , Henry Chin , Liang Li , Vincent Yin , Wei Zhao , Tony Zou
IPC: G11C16/14 , G11C16/04 , G11C16/08 , G11C16/24 , G11C16/26 , G11C16/34 , G11C29/50 , H10B41/27 , H10B43/27
CPC classification number: G11C16/14 , G11C16/0483 , G11C16/08 , G11C16/24 , G11C16/26 , G11C16/349 , G11C29/50004 , G11C2029/5004 , H10B41/27 , H10B43/27
Abstract: The memory device includes a memory block with an array of memory cells. The memory device also includes control circuitry that is in communication with the memory cells. The control circuitry is configured to program a group of the memory cells in a programming operation that does not include verify to obtain a natural threshold voltage (nVt) distribution, calculate an nVt width of the nVt distribution, compare the nVt width to a threshold, and identify the memory block as being vulnerable to cross-temperature read errors in response to the nVt width exceeding the threshold.
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