公开(公告)号：US09760303B2

公开(公告)日：2017-09-12

申请号：US14869686

申请日：2015-09-29

Applicant: SanDisk Technologies LLC

Inventor： Dennis S. Ea ,  Ivan Baran ,  Aaron Lee ,  Mrinal Kochar ,  Mikhail Palityka ,  Yew Yin Ng ,  Abhijeet Bhalerao

IPC: G06F12/00 ,  G06F3/06 ,  G11C11/56 ,  G11C16/04 ,  G11C29/00 ,  G06F12/02 ,  G06F11/10

CPC classification number: G06F3/064 ,  G06F3/0604 ,  G06F3/065 ,  G06F3/0667 ,  G06F3/0679 ,  G06F11/1048 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7204 ,  G06F2212/7206 ,  G11C11/5621 ,  G11C16/0483 ,  G11C29/76 ,  G11C29/765 ,  G11C29/808 ,  G11C29/82 ,  G11C29/88

Abstract: Partially-bad blocks are identified in a 3-D block-erasable nonvolatile memory, each partially-bad block having one or more inoperable separately-selectable sets of NAND strings and one or more operable separately-selectable sets of NAND strings. Operable sets of NAND strings within two or more partially-bad blocks are identified and are mapped to form one or more virtual blocks that are individually assigned virtual block addresses. The virtual block address are maintained in a list and used to access the virtual blocks.

公开(公告)号：US09858009B2

公开(公告)日：2018-01-02

申请号：US14923137

申请日：2015-10-26

Applicant: SanDisk Technologies LLC

Inventor： Abhijeet Bhalerao ,  Mrinal Kochar ,  Dennis S. Ea ,  Mikhail Palityka ,  Aaron Lee ,  Yew Yin Ng ,  Ivan Baran

IPC: G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0604 ,  G06F3/065 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/7208

Abstract: Data that is initially stored in Single Level Cell (SLC) blocks is subsequently copied (folded) to a Multi Level Cell (MLC) block where the data is stored in MLC format, the data copied in a minimum unit of a fold-set, the MLC block including a plurality of separately-selectable sets of NAND strings, data of an individual fold-set copied exclusively to two or more word lines of an individual separately-selectable set of NAND strings in the MLC block.