公开(公告)号：US20060154407A1

公开(公告)日：2006-07-13

申请号：US11298566

申请日：2005-12-12

申请人： Sang Han ,  Sung Lee ,  Myung Huh ,  Seok Jeong ,  Kwan Song ,  Hee Kang

发明人： Sang Han ,  Sung Lee ,  Myung Huh ,  Seok Jeong ,  Kwan Song ,  Hee Kang

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： C03C17/28 ,  C03C17/001 ,  C03C17/002 ,  C23C14/042 ,  C23C14/541

摘要： The invention provides a chuck plate assembly that includes a shadow mask formed with a predetermined pattern; a shadow mask frame holding the shadow mask and having heat-radiating and cooling functions; a substrate aligned with the shadow mask and onto which deposition materials from a deposition source are deposited; and a chuck plate, attaching the substrate to the shadow mask, that includes a refrigerant circulating duct. The temperature of the substrate is optimized in consideration of the temperature of the shadow mask so that an alignment error due to thermal deformation is minimized. That is, the temperature of the shadow mask itself is prevented from rising, and thereby prevents deformation of the shadow mask due to thermal expansion, which improves the precision of a substrate pattern position.

公开(公告)号：US20060257569A1

公开(公告)日：2006-11-16

申请号：US11433176

申请日：2006-05-12

申请人： Han Kim ,  Myoung Kim ,  Myung Huh ,  Seok Jeong ,  Hee Kang

发明人： Han Kim ,  Myoung Kim ,  Myung Huh ,  Seok Jeong ,  Hee Kang

IPC分类号： C23C16/00

CPC分类号： C23C16/24 ,  C23C16/44

摘要： A method for in-situ polycrystalline thin film growth is provided. A catalyst enhanced chemical vapor deposition (CECVD) apparatus is used to grow the polycrystalline silicon thin film. No subsequent annealing or dehydrogenating process is needed. The method comprises exhausting a chamber to form a vacuum chamber, and then purging vacuum chamber and introducing a catalyst. A substrate is then placed in the vacuum chamber and reaction gas is injected into the chamber. The reaction gas reacts with the catalyst in the chamber to grow a polycrystalline thin film on the substrate. The inventive method reduces processing time and production cost and can be used to fabricate larger devices due to the elimination of bulky annealing equipment.

摘要翻译： 提供了一种原位多晶薄膜生长的方法。 使用催化剂增强化学气相沉积（CECVD）装置来生长多晶硅薄膜。 不需要随后的退火或脱氢过程。 该方法包括排空室以形成真空室，然后净化真空室并引入催化剂。 然后将基板放置在真空室中，并将反应气体注入室中。 反应气体与室中的催化剂反应，以在衬底上生长多晶薄膜。 本发明的方法减少了处理时间和生产成本，并且由于消除了大型退火设备而可用于制造更大的装置。

公开(公告)号：US20060169211A1

公开(公告)日：2006-08-03

申请号：US11342681

申请日：2006-01-31

申请人： Do Kim ,  Myung Huh ,  Seok Jeong ,  Hee Kang ,  Kazuo Furuno

发明人： Do Kim ,  Myung Huh ,  Seok Jeong ,  Hee Kang ,  Kazuo Furuno

IPC分类号： C23C16/00

CPC分类号： C23C14/243 ,  C23C14/24

摘要： A vapor deposition source has a reduced size by disposing a crucible, a heating portion, and a nozzle portion in one defined space. A vapor deposition apparatus deposits deposition materials on a substrate using the vapor deposition source. The vapor deposition source includes a housing, and the crucible is mounted in the housing for vaporizing the deposition materials. The heating portion is installed adjacent to the crucible in the housing for heating the crucible. The nozzle portion injects the vaporized deposition materials into a substrate disposed at an exterior of the housing through an injection nozzle. The vapor deposition source is manufactured in a smaller and lightweight form in comparison with conventional vapor deposition sources in which a crucible and a nozzle portion are arranged in different spaces. The diameter and number of injection nozzles of the invention are restricted to block radiant heat discharged from the vapor deposition source, so that deposition materials are uniformly deposited. Furthermore, the output power of a conveyer for conveying the vapor deposition source is reduced. In addition, a plurality of vapor deposition sources is arranged in a line to perform concentrated deposition of deposition materials so that quality of the resultant product is improved.

摘要翻译： 气相沉积源通过在一个限定的空间内设置坩埚，加热部分和喷嘴部分而具有减小的尺寸。 气相沉积设备使用蒸镀源将沉积材料沉积在基板上。 气相沉积源包括壳体，并且坩埚安装在壳体中以使沉积材料蒸发。 加热部分安装在坩埚附近，用于加热坩埚。 喷嘴部分通过注射喷嘴将蒸发的沉积材料注入设置在外壳外部的基板中。 与其中坩埚和喷嘴部分布置在不同空间中的常规气相沉积源相比，气相沉积源以更小和轻质的形式制造。 本发明的注射喷嘴的直径和数量被限制为阻挡从蒸镀源排出的辐射热，从而均匀地沉积沉积材料。 此外，用于输送气相沉积源的输送机的输出功率降低。 此外，多个气相沉积源被排列成一行，以进行沉积材料的浓缩沉积，从而提高所得产品的质量。

公开(公告)号：US20060033445A1

公开(公告)日：2006-02-16

申请号：US11119708

申请日：2005-05-03

申请人： Seong Kim ,  Seok Jeong

发明人： Seong Kim ,  Seok Jeong

IPC分类号： G09G3/10

CPC分类号： G09G3/2055 ,  G09G3/2025 ,  G09G3/3233 ,  G09G2320/0276

摘要： An organic light emitting diode (OLED) device and a method of driving the OLED device are provided. The OLED device according to an embodiment includes a timing controller and a data drive unit. The timing controller performs a gamma correction of inputted image data for the OLED device, and then changes a bit number of the gamma-corrected image data to thereby output converted image data. The data drive unit outputs a data drive signal on the basis of the converted image data.

摘要翻译： 提供了一种有机发光二极管（OLED）器件和驱动OLED器件的方法。 根据实施例的OLED器件包括定时控制器和数据驱动单元。 定时控制器对OLED装置的输入图像数据进行伽马校正，然后改变伽马校正图像数据的位数，从而输出转换的图像数据。 数据驱动单元基于转换的图像数据输出数据驱动信号。

公开(公告)号：US20050198664A1

公开(公告)日：2005-09-08

申请号：US11069053

申请日：2005-03-02

申请人： Gwang Cho ,  Il Jun ,  Ki Park ,  Byung Kang ,  Jai Jo ,  Seok Jeong

发明人： Gwang Cho ,  Il Jun ,  Ki Park ,  Byung Kang ,  Jai Jo ,  Seok Jeong

IPC分类号： H04N7/173 ,  H04N5/44 ,  G06F3/00 ,  G06F13/00 ,  H04N5/445 ,  H04N7/16

CPC分类号： H04N21/4227 ,  H04N7/17363 ,  H04N21/25875 ,  H04N21/44222 ,  H04N21/4532 ,  H04N21/4542 ,  H04N21/4753 ,  H04N21/4882

摘要： An apparatus and methods for controlling broadcast channel access in a video display are provided. The apparatus includes at least one user input unit configured to preset one or more viewable-channel numbers and turn on/off a broadcast channel access mode of the video display, a memory configured to store the preset viewable channel numbers, a controller configured to output a channel selection control signal for selecting only the stored channel numbers when a broadcast channel access mode is turned on, and a channel selector configured for selecting only a required channel out of currently-received broadcast channels according to the channel selection control signal. The apparatus may also include a second user input unit configured to input a required channel number, and a display unit configured to display a video signal of the selected channel.

摘要翻译： 提供了一种在视频显示器中控制广播频道访问的装置和方法。 该装置包括：至少一个用户输入单元，被配置为预设一个或多个可视频道号码，并且打开/关闭视频显示器的广播频道接入模式;被配置为存储预设可视频道号码的存储器，被配置为输出 频道选择控制信号，用于当广播频道接入模式被接通时仅选择所存储的频道号码;以及频道选择器，被配置为根据频道选择控制信号从当前接收到的广播频道中仅选择所需频道。 该装置还可以包括被配置为输入所需频道号的第二用户输入单元和被配置为显示所选频道的视频信号的显示单元。

公开(公告)号：US20070128861A1

公开(公告)日：2007-06-07

申请号：US11405091

申请日：2006-04-17

申请人： Myoung Kim ,  Han Kim ,  Seok Jeong

发明人： Myoung Kim ,  Han Kim ,  Seok Jeong

IPC分类号： H01L21/84 ,  H01L21/44 ,  C23C16/00

CPC分类号： C23C16/44 ,  C23C16/24 ,  H01L27/13 ,  H01L29/6675

摘要： Disclosed is a CVD apparatus for depositing polysilicon without a separate following annealing process, the CVD apparatus comprising: a chamber to form a thin film on a substrate; a showerhead placed in an upper part of the chamber to inject reaction gas onto the substrate; a distributor formed with distributing holes to uniformly distribute the reaction gas; a catalyst hot wire unit to heat and dissolve the reaction gas injected through the distributing holes of the distributor; a chuck on which the substrate is mounted; a discharging hole to discharge the reaction gas; and a shielding wall provided as a lateral wall of the chamber and formed with a heater to suppress particle generation. With this configuration, the particle generation is minimized and thus the yield is enhanced. Also, the thin film has good crystallinity, and decreased hydrogen content.

摘要翻译： 公开了一种用于在没有单独的跟随退火工艺的情况下沉积多晶硅的CVD装置，该CVD装置包括：在衬底上形成薄膜的腔室; 放置在所述室的上部的喷头，以将反应气体注入到所述基板上; 形成有分布孔以均匀分布反应气体的分配器; 用于加热和溶解通过分配器的分配孔注入的反应气体的催化剂热丝单元; 安装有基板的卡盘; 用于排出反应气体的排出孔; 以及作为室的侧壁设置的屏蔽壁，并且形成有用于抑制颗粒产生的加热器。 利用这种构造，使颗粒生成最小化，从而提高了产率。 此外，薄膜具有良好的结晶度，并降低了氢含量。

公开(公告)号：US20070077358A1

公开(公告)日：2007-04-05

申请号：US11515364

申请日：2006-08-31

申请人： Min Jeong ,  Do Kim ,  Seok Jeong

发明人： Min Jeong ,  Do Kim ,  Seok Jeong

IPC分类号： C23C16/00

CPC分类号： C23C14/243

摘要： An apparatus for depositing an organic layer and a method for controlling the heating unit thereof are provided. The apparatus includes a crucible positioned in a deposition chamber and containing materials for evaporation. The apparatus also includes a heating unit having first and second heat sources for heating the crucible. A housing isolates the heat emitted from the heating unit and an outer wall anchors the crucible. A nozzle sprays the materials evaporated from the crucible. The first and second heat sources are positioned on first and second sides of the crucible, respectively, and are independently controlled to minimize the time required to stabilize the deposition rate.

摘要翻译： 提供了一种用于沉积有机层的设备及其加热单元的控制方法。 该装置包括位于沉积室中并包含用于蒸发的材料的坩埚。 该装置还包括具有用于加热坩埚的第一和第二热源的加热单元。 外壳隔离加热单元发出的热量，外壁将坩埚固定。 喷嘴喷洒从坩埚蒸发的材料。 第一和第二热源分别位于坩埚的第一和第二侧上，并且被独立地控制以最小化稳定沉积速率所需的时间。