公开(公告)号：US20070077358A1

公开(公告)日：2007-04-05

申请号：US11515364

申请日：2006-08-31

申请人： Min Jeong ,  Do Kim ,  Seok Jeong

发明人： Min Jeong ,  Do Kim ,  Seok Jeong

IPC分类号： C23C16/00

CPC分类号： C23C14/243

摘要： An apparatus for depositing an organic layer and a method for controlling the heating unit thereof are provided. The apparatus includes a crucible positioned in a deposition chamber and containing materials for evaporation. The apparatus also includes a heating unit having first and second heat sources for heating the crucible. A housing isolates the heat emitted from the heating unit and an outer wall anchors the crucible. A nozzle sprays the materials evaporated from the crucible. The first and second heat sources are positioned on first and second sides of the crucible, respectively, and are independently controlled to minimize the time required to stabilize the deposition rate.

摘要翻译： 提供了一种用于沉积有机层的设备及其加热单元的控制方法。 该装置包括位于沉积室中并包含用于蒸发的材料的坩埚。 该装置还包括具有用于加热坩埚的第一和第二热源的加热单元。 外壳隔离加热单元发出的热量，外壁将坩埚固定。 喷嘴喷洒从坩埚蒸发的材料。 第一和第二热源分别位于坩埚的第一和第二侧上，并且被独立地控制以最小化稳定沉积速率所需的时间。

公开(公告)号：US20070119849A1

公开(公告)日：2007-05-31

申请号：US11514313

申请日：2006-08-30

申请人： Min Jeong ,  Do Kim ,  Young Choi

发明人： Min Jeong ,  Do Kim ,  Young Choi

IPC分类号： H05B3/02 ,  C23C16/00

CPC分类号： C23C14/26

摘要： A heater and a vapor deposition source having the same capable of plating materials having a uniform thickness on a board by ensuring a temperature uniformity of a melting pot. The heater is provided on at least one of an upper side or a lower side of the melting pot to heat the melting pot. The heater includes a plurality of bents with non-uniform pitches. A central part of the heater has a pitch larger than pitches at both edge parts of the heater. As such, the plurality of bents with the non-uniform pitches reduce a temperature difference between the central part and the edge parts of the heater, and makes an evaporation of plating materials uniform, thereby making the thickness of plated materials uniform.

摘要翻译： 具有能够通过确保熔炉的温度均匀性在板上镀覆具有均匀厚度的材料的加热器和蒸镀源。 加热器设置在熔炉的上侧或下侧中的至少一个上，以加热熔炉。 加热器包括具有不均匀间距的多个弯头。 加热器的中心部分具有比加热器的两个边缘部分处的间距大的间距。 因此，具有不均匀间距的多个弯曲减小了加热器的中心部分和边缘部分之间的温度差，并且使电镀材料的蒸发均匀，从而使电镀材料的厚度均匀。

公开(公告)号：US20070084409A1

公开(公告)日：2007-04-19

申请号：US11515388

申请日：2006-08-31

申请人： Min Jeong ,  Do Kim ,  Hee Kang

发明人： Min Jeong ,  Do Kim ,  Hee Kang

IPC分类号： C23C16/00

CPC分类号： C23C14/243

摘要： A linear type deposition source capable of improving a heating efficiency and reducing a heating temperature by using a plate-type heating source and/or improving a cooling efficiency by including a cooling jacket having a cooling water line in a housing. The linear type deposition source includes: a crucible arranged in a deposition chamber, the crucible being for evaporating materials included in the crucible; a heating source for applying heat to the crucible; a housing for isolating the heat emitted from the heating source; an outer wall for anchoring the crucible; and a nozzle unit for spraying the materials evaporated from the crucible. In this deposition source, the heating source is a plate-type heating source, and the housing has a cooling water line so cooling water can flow through the cooling water line.

摘要翻译： 一种能够通过使用板式加热源来提高加热效率和降低加热温度的线性型沉积源和/或通过在壳体中具有冷却水管线的冷却套来提高冷却效率。 线性型沉积源包括：坩埚，布置在沉积室中，该坩埚用于蒸发包含在坩埚中的材料; 用于向坩埚施加热量的加热源; 用于隔离从所述加热源发出的热量的壳体; 用于锚定坩埚的外壁; 以及用于喷射从坩埚蒸发的材料的喷嘴单元。 在该沉积源中，加热源是板式加热源，壳体具有冷却水管线，因此冷却水可以流过冷却水管线。

公开(公告)号：US20050153500A1

公开(公告)日：2005-07-14

申请号：US11025696

申请日：2004-12-28

申请人： Min Jeong

发明人： Min Jeong

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/324 ,  H01L21/336 ,  H01L29/51 ,  H01L21/8234 ,  H01L29/76 ,  H01L31/062

CPC分类号： H01L21/28202 ,  H01L21/2652 ,  H01L21/28035 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/324 ,  H01L29/518 ,  H01L29/6656 ,  H01L29/6659

摘要： A method for fabricating a MOS transistor in a semiconductor device is disclosed. An example method subjects a surface of a semiconductor substrate to thermal oxidation to form an oxide film for forming a gate insulating film, deposits a polysilicon layer on the oxide film for forming a gate, applies a coat of photoresist onto the polysilicon layer, and performs exposure and development by using an exposure mask which defines the gate to form a photoresist pattern covering a region where the gate is to be formed. The example method also performs dry etching to remove the polysilicon layer for forming the gate and the oxide film for forming the gate insulating film, which are not protected with the photoresist pattern, to form a gate pattern, performs annealing under a nitrogen environment to form a nitrided oxide film, and forms buried lightly doped impurity ion layers on opposite sides of the gate pattern. Additionally, the example method deposits an insulating layer on the substrate to cover the gate pattern and etches back the insulating layer to expose the surface of the semiconductor substrate to form sidewall spacers, forms buried heavily doped impurity ion layers in the semiconductor substrate at exposed active regions by using the gate pattern and the sidewall spacers as an ion injection mask, and performs annealing to diffuse impurity ions for forming source/drain junctions to form lightly doped impurity diffusion regions and heavily doped impurity diffusion regions.

摘要翻译： 公开了一种在半导体器件中制造MOS晶体管的方法。 示例性方法使半导体衬底的表面经受热氧化以形成用于形成栅极绝缘膜的氧化膜，在用于形成栅极的氧化物膜上沉积多晶硅层，在多晶硅层上施加一层光致抗蚀剂，并执行 通过使用限定栅极以形成覆盖要形成栅极的区域的光致抗蚀剂图案的曝光掩模来曝光和显影。 该示例方法还进行干蚀刻以去除用于形成栅极的多晶硅层和用于形成栅极绝缘膜的氧化膜，其不被光致抗蚀剂图案保护以形成栅极图案，在氮气环境下进行退火以形成 氮化氧化物膜，并且在栅极图案的相对侧上形成埋入的轻掺杂杂质离子层。 此外，该示例性方法在衬底上沉积绝缘层以覆盖栅极图案并蚀刻绝缘层以暴露半导体衬底的表面以形成侧壁间隔物，在暴露的活性物质上在半导体衬底中形成埋入重掺杂杂质离子层 通过使用栅极图案和侧壁间隔物作为离子注入掩模，进行退火以扩散用于形成源极/漏极结的杂质离子，以形成轻掺杂杂质扩散区域和重掺杂杂质扩散区域。