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    Memory device including dendrimer
    1.
    发明授权
    Memory device including dendrimer 有权
    记忆装置包括树枝状大分子

    公开(公告)号：US07635859B2

    公开(公告)日：2009-12-22

    申请号：US11318533

    申请日：2005-12-28

    申请人： Sang Kyun Lee ,  Won Jae Joo ,  Chul Hee Kim ,  Yoon Sok Kang

    发明人： Sang Kyun Lee ,  Won Jae Joo ,  Chul Hee Kim ,  Yoon Sok Kang

    IPC分类号： H01L51/05

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0009 ,  G11C13/0016 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/77 ,  G11C2213/80

    摘要： A memory device including an organic material layer between an upper electrode and a lower electrode. The organic material layer includes a dendrimer containing at least one electron-donating group and at least one electron-accepting group. The disclosed memory device is advantageous in that it shows a nonvolatile property, has high integration density and low power consumption characteristics, and may be inexpensively fabricated through a simple process.

    摘要翻译： 一种存储器件，包括在上电极和下电极之间的有机材料层。 有机材料层包括含有至少一个给电子基团和至少一个电子接受基团的树枝状聚合物。 所公开的存储器件的优点在于其显示非易失性特性，具有高的集成密度和低功耗特性，并且可以通过简单的工艺廉价地制造。

    Method of manufacturing nonvolatile organic memory device and nonvolatile organic memory device manufactured by the same
    3.
    发明授权
    Method of manufacturing nonvolatile organic memory device and nonvolatile organic memory device manufactured by the same 有权
    制造非易失性有机存储装置的方法和由其制造的非易失性有机存储装置

    公开(公告)号：US07405167B2

    公开(公告)日：2008-07-29

    申请号：US11214724

    申请日：2005-08-31

    申请人： Yoon Sok Kang ,  Sang Kyun Lee ,  Won Jae Joo ,  Kwang Hee Lee

    发明人： Yoon Sok Kang ,  Sang Kyun Lee ,  Won Jae Joo ,  Kwang Hee Lee

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/20 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L21/02

    摘要： A method of manufacturing a nonvolatile organic memory device including a memory layer interposed between an upper electrode layer and a lower electrode layer, which includes dispersing ions of conductive nanoparticles in an organic material disposed between the two electrode layers and then reducing the ions of conductive nanoparticles into conductive nanoparticles in the organic material to form a desired memory layer. In addition, a nonvolatile organic memory device manufactured by the method of the current invention is also provided. The method allows the memory device to be manufactured using a rapid, simple, and environmentally friendly process, without the need for an encapsulation process. As well, the memory device has a low operating voltage, and hence, is suitable for application to various portable electronic devices that must have low power consumption.

    摘要翻译： 一种制造非易失性有机存储装置的方法，包括介于上电极层和下电极层之间的存储层，其包括将导电纳米颗粒的离子分散在设置在两个电极层之间的有机材料中，然后还原导电纳米颗粒的离子 在有机材料中形成导电纳米颗粒以形成期望的记忆层。 此外，还提供了通过本发明的方法制造的非易失性有机存储器件。 该方法允许使用快速，简单和环境友好的过程来制造存储器件，而不需要封装工艺。 同样，存储器件具有低工作电压，因此适用于必须具有低功耗的各种便携式电子设备。

    Memory device using quantum dots
    4.
    发明授权
    Memory device using quantum dots 有权
    使用量子点的存储器件

    公开(公告)号：US07491968B2

    公开(公告)日：2009-02-17

    申请号：US11230530

    申请日：2005-09-21

    申请人： Yoon Sok Kang ,  Sang Kyun Lee ,  Won Jae Joo

    发明人： Yoon Sok Kang ,  Sang Kyun Lee ,  Won Jae Joo

    IPC分类号： H01L51/00

    CPC分类号： H01L27/10 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2216/08 ,  Y10S977/753 ,  Y10S977/783

    摘要： A memory device, which includes a memory layer having quantum dots uniformly dispersed in organic material disposed between an upper electrode layer and a lower electrode layer. The memory device is advantageous because it is nonvolatile and inexpensive, and realizes high integration and high speed switching. Further, size and distribution of the quantum dots may be uniform, thus realizing uniform memory behavior. Furthermore, the memory device is suitable for application to portable electronic devices that must have low power consumption, due to low operating voltages thereof.

    摘要翻译： 一种存储器件，其包括具有均匀分散在设置在上电极层和下电极层之间的有机材料中的量子点的存储层。 存储器件是非易失性且便宜的，因此具有高集成度和高​​速度切换的优点。 此外，量子点的尺寸和分布可以是均匀的，从而实现均匀的记忆行为。 此外，存储器件适用于由于其低工作电压而必须具有低功耗的便携式电子设备。

    Method of driving memory device to implement multiple states
    5.
    发明授权
    Method of driving memory device to implement multiple states 有权
    驱动存储器件实现多种状态的方法

    公开(公告)号：US07321503B2

    公开(公告)日：2008-01-22

    申请号：US11229708

    申请日：2005-09-20

    申请人： Won Jae Joo ,  Yoon Sok Kang ,  Kwang Hee Lee

    发明人： Won Jae Joo ,  Yoon Sok Kang ,  Kwang Hee Lee

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0016 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/77 ,  H01L27/285

    摘要： A method of driving a multi-state organic memory device which includes an organic memory layer between upper and lower electrodes. The method comprises continuously applying voltages having different polarities to conduct switching into a low resistance state, and applying a single pulse to conduct switching into a high resistance state. A multi-state memory is realized using one memory device, since it is possible to gain three or more resistance states, thus significantly improving integration. The method has excellent reproducibility, and the resistance state induced by multiple pulses has an excellent nonvolatile characteristic.

    摘要翻译： 一种驱动多态有机存储器件的方法，其包括在上电极和下电极之间的有机存储层。 所述方法包括连续施加具有不同极性的电压以导通切换为低电阻状态，并施加单个脉冲以导通切换为高电阻状态。 使用一个存储器件实现多状态存储器，因为可以获得三个或更多个电阻状态，从而显着改善集成度。 该方法具有优异的再现性，并且由多个脉冲引起的电阻状态具有优异的非挥发性特性。