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    Method of manufacturing nonvolatile organic memory device and nonvolatile organic memory device manufactured by the same
    4.
    发明授权
    Method of manufacturing nonvolatile organic memory device and nonvolatile organic memory device manufactured by the same 有权
    制造非易失性有机存储装置的方法和由其制造的非易失性有机存储装置

    公开(公告)号：US07405167B2

    公开(公告)日：2008-07-29

    申请号：US11214724

    申请日：2005-08-31

    申请人： Yoon Sok Kang ,  Sang Kyun Lee ,  Won Jae Joo ,  Kwang Hee Lee

    发明人： Yoon Sok Kang ,  Sang Kyun Lee ,  Won Jae Joo ,  Kwang Hee Lee

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/20 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L21/02

    摘要： A method of manufacturing a nonvolatile organic memory device including a memory layer interposed between an upper electrode layer and a lower electrode layer, which includes dispersing ions of conductive nanoparticles in an organic material disposed between the two electrode layers and then reducing the ions of conductive nanoparticles into conductive nanoparticles in the organic material to form a desired memory layer. In addition, a nonvolatile organic memory device manufactured by the method of the current invention is also provided. The method allows the memory device to be manufactured using a rapid, simple, and environmentally friendly process, without the need for an encapsulation process. As well, the memory device has a low operating voltage, and hence, is suitable for application to various portable electronic devices that must have low power consumption.

    摘要翻译： 一种制造非易失性有机存储装置的方法，包括介于上电极层和下电极层之间的存储层，其包括将导电纳米颗粒的离子分散在设置在两个电极层之间的有机材料中，然后还原导电纳米颗粒的离子 在有机材料中形成导电纳米颗粒以形成期望的记忆层。 此外，还提供了通过本发明的方法制造的非易失性有机存储器件。 该方法允许使用快速，简单和环境友好的过程来制造存储器件，而不需要封装工艺。 同样，存储器件具有低工作电压，因此适用于必须具有低功耗的各种便携式电子设备。

    Method of driving memory device to implement multiple states
    5.
    发明授权
    Method of driving memory device to implement multiple states 有权
    驱动存储器件实现多种状态的方法

    公开(公告)号：US07321503B2

    公开(公告)日：2008-01-22

    申请号：US11229708

    申请日：2005-09-20

    申请人： Won Jae Joo ,  Yoon Sok Kang ,  Kwang Hee Lee

    发明人： Won Jae Joo ,  Yoon Sok Kang ,  Kwang Hee Lee

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0016 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/77 ,  H01L27/285

    摘要： A method of driving a multi-state organic memory device which includes an organic memory layer between upper and lower electrodes. The method comprises continuously applying voltages having different polarities to conduct switching into a low resistance state, and applying a single pulse to conduct switching into a high resistance state. A multi-state memory is realized using one memory device, since it is possible to gain three or more resistance states, thus significantly improving integration. The method has excellent reproducibility, and the resistance state induced by multiple pulses has an excellent nonvolatile characteristic.

    摘要翻译： 一种驱动多态有机存储器件的方法，其包括在上电极和下电极之间的有机存储层。 所述方法包括连续施加具有不同极性的电压以导通切换为低电阻状态，并施加单个脉冲以导通切换为高电阻状态。 使用一个存储器件实现多状态存储器，因为可以获得三个或更多个电阻状态，从而显着改善集成度。 该方法具有优异的再现性，并且由多个脉冲引起的电阻状态具有优异的非挥发性特性。

    Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound
    6.
    发明授权
    Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound 有权
    多功能环状硅氧烷化合物以及使用由该化合物制备的硅氧烷类聚合物制备电介质膜的方法

    公开(公告)号：US07750176B2

    公开(公告)日：2010-07-06

    申请号：US12458009

    申请日：2009-06-29

    申请人： Hyeon Jin Shin ,  Hyun Dam Jeong ,  Jong Baek Seon ,  Sang Kook Mah ,  Jin Heong Yim ,  Jae Jun Lee ,  Kwang Hee Lee ,  Jung Bae Kim

    发明人： Hyeon Jin Shin ,  Hyun Dam Jeong ,  Jong Baek Seon ,  Sang Kook Mah ,  Jin Heong Yim ,  Jae Jun Lee ,  Kwang Hee Lee ,  Jung Bae Kim

    IPC分类号： C07F7/08 ,  C08G77/04 ,  B32B9/04

    CPC分类号： C07F7/21 ,  Y10T428/31663

    摘要： A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

    摘要翻译： 多官能环状硅氧烷化合物（A），由化合物（A）或化合物（A）制备的硅氧烷类（共）聚合物和至少一种具有有机桥（B）的Si单体，无环烷氧基 硅烷单体（C）和直链硅氧烷单体（D）; 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性，因此由该化合物制备的聚合物的机械性能，热稳定性和抗裂性优异，并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外，低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性，其中它被广泛用作电介质膜。

    Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound
    7.
    发明申请
    Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound 有权
    多功能环状硅氧烷化合物以及使用由该化合物制备的硅氧烷类聚合物制备电介质膜的方法

    公开(公告)号：US20090269942A1

    公开(公告)日：2009-10-29

    申请号：US12458009

    申请日：2009-06-29

    申请人： Hyeon Jin Shin ,  Hyun Dam Jeong ,  Jong Baek Seon ,  Sang Kook Mah ,  Jin Heong Yim ,  Jae Jun Lee ,  Kwang Hee Lee ,  Jung Bae Kim

    发明人： Hyeon Jin Shin ,  Hyun Dam Jeong ,  Jong Baek Seon ,  Sang Kook Mah ,  Jin Heong Yim ,  Jae Jun Lee ,  Kwang Hee Lee ,  Jung Bae Kim

    IPC分类号： H01L21/312 ,  C07F7/21

    CPC分类号： C07F7/21 ,  Y10T428/31663

    摘要： A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

    摘要翻译： 多官能环状硅氧烷化合物（A），由化合物（A）或化合物（A）制备的硅氧烷类（共）聚合物和至少一种具有有机桥（B）的Si单体，无环烷氧基 硅烷单体（C）和直链硅氧烷单体（D）; 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性，因此由该化合物制备的聚合物的机械性能，热稳定性和抗裂性优异，并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外，低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性，其中它被广泛用作电介质膜。

    Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymer
    8.
    发明授权
    Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymer 有权
    多官能环状硅氧烷化合物，由该化合物制备的硅氧烷类聚合物和使用聚合物制备电介质膜的方法

    公开(公告)号：US07576230B2

    公开(公告)日：2009-08-18

    申请号：US10878119

    申请日：2004-06-29

    申请人： Hyeon Jin Shin ,  Hyun Dam Jeong ,  Jong Baek Seon ,  Sang Kook Mah ,  Jin Heong Yim ,  Jae Jun Lee ,  Kwang Hee Lee ,  Jung Bae Kim

    发明人： Hyeon Jin Shin ,  Hyun Dam Jeong ,  Jong Baek Seon ,  Sang Kook Mah ,  Jin Heong Yim ,  Jae Jun Lee ,  Kwang Hee Lee ,  Jung Bae Kim

    IPC分类号： C07F7/08 ,  C08G77/04

    CPC分类号： C07F7/21 ,  Y10T428/31663

    摘要： A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

    摘要翻译： 多官能环状硅氧烷化合物（A），由化合物（A）或化合物（A）制备的硅氧烷类（共）聚合物和至少一种具有有机桥（B）的Si单体，无环烷氧基 硅烷单体（C）和直链硅氧烷单体（D）; 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性，因此由该化合物制备的聚合物的机械性能，热稳定性和抗裂性优异，并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外，低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性，其中它被广泛用作电介质膜。