摘要:
A solar cell, including a substrate, a first electrode disposed on the substrate, a photoelectric conversion layer disposed on the first electrode, and a second electrode disposed on the photoelectric conversion layer, wherein a grating is disposed on at least one of the first electrode and the second electrode.
摘要:
A thin film solar cell, includes: a first electrode; a light absorption layer including a first light absorption layer including a group I element-group III element-group VI element compound, a second light absorption layer including a group I element-group III element-group VI element compound, and a third light absorption layer including a group I element-group III element-group VI element compound; and a second electrode, wherein the first light absorption layer has a band gap, which is less a band gap of the second light absorption layer, the band gap of the second light absorption layer is less than a band gap of the third light absorption layer, and the second light absorption layer has a band gap gradient, which increases in a direction from the first light absorption layer to the third light absorption layer.
摘要:
A tandem solar cell includes: a substrate; a front electrode disposed on the substrate; a back electrode disposed opposite to the front electrode on the substrate; a first cell disposed below the front electrode and including a first buffer layer and a first light absorption layer; and a second cell disposed above the back electrode and including a second light absorption layer and a second buffer layer. The first light absorption layer includes a CuGaSeS layer and a CuGaSe layer, and the second light absorption layer includes a semiconductor compound selected from the group consisting of CuInSe2, CuInGaSe2, CuInSeS, CuInGaSeS and any combinations thereof. The CuGaSeS layer of the first light absorption layer is disposed closer than the CuGaSe layer of the first light absorption layer to the front electrode.
摘要:
A solar cell in which the P-type light absorbing layer is thin, and the nanoparticles are disposed. Although the P-type light absorbing layer is thin, the light absorption efficiency may be increased by the use of nanoparticles. Accordingly, the P-type light absorbing layer is formed thin, and thereby the material cost may be reduced and the process time may be shortened.Also, a solar cell in which the nanoparticles are disposed on the transparent electrode layer or inside the transparent electrode layer, and the size of the nanoparticles and the space between them are controlled such that the light absorption efficiency may be increased, and the nanoparticles are disposed in the N-type light absorbing layer, and the size of the nanoparticles and the space between them are controlled such that the light absorption efficiency may be increased.
摘要:
Provided is a solar cell that includes: a substrate; a first electrode disposed on the substrate; a light absorbing layer disposed on the first electrode; a buffer layer disposed on the light absorbing layer; and a second electrode disposed on the buffer layer, wherein the buffer layer contains a compound represented by one of the following Formulas 1 and 2: (In1-xGax)2O3 Formula 1 (In1-xAlx)2O3 Formula 2 wherein x is 0
摘要:
A solar cell manufacturing method includes forming a first electrode on a substrate, forming a mixed metal layer on the first electrode, forming a light absorbing layer by injecting hydrogen selenide on the entire surface of the mixed metal layer using a gas injection device, and forming a second electrode on the light absorbing layer. Further, the gas injection device includes a gas pipeline, an inner gas pipe positioned in the gas pipeline and having an opening, and a plurality of injection nozzles disposed below the gas pipeline.
摘要:
A method of manufacturing a solar cell is presented.The manufacturing method of a solar cell may include: forming a first electrode on a substrate; forming a precursor that includes copper, gallium, and indium on a first electrode, forming a preliminary light absorption layer by providing selenium Se to the precursor, forming a light absorption layer by providing a compound including at least one of gallium and indium to the preliminary light absorption layer, and forming a second electrode on the light absorption layer.