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    Semiconductor memory device employing clamp for preventing latch up
    1.
    发明授权
    Semiconductor memory device employing clamp for preventing latch up 有权
    半导体存储器件采用夹具防止闩锁

    公开(公告)号：US07889574B2

    公开(公告)日：2011-02-15

    申请号：US12219572

    申请日：2008-07-24

    申请人： Sang-Jin Byeon ,  Kang-Seol Lee

    发明人： Sang-Jin Byeon ,  Kang-Seol Lee

    IPC分类号： G11C7/10

    CPC分类号： G11C7/12 ,  G11C7/06

    摘要： A semiconductor memory device employs a clamp for preventing latch up. For the purpose, the semiconductor memory device includes a precharging/equalizing unit for precharging and equalizing a pair of bit lines, and a control signal generating unit for producing a control signal which controls enable and disable of the precharging/equalizing unit, wherein the control signal generating unit includes a clamping unit to clamp its source voltage to a voltage level lower than that of its bulk bias.

    摘要翻译： 半导体存储器件采用夹具来防止闩锁。 为此，半导体存储器件包括用于对一对位线进行预充电和均衡的预充电/均衡单元，以及用于产生控制预充电/均衡单元的使能和禁能的控制信号的控制信号产生单元，其中控制 信号发生单元包括钳位单元，用于将其源极电压钳位到低于其体积偏压的电压电平。

    Semiconductor memory device employing clamp for preventing latch up
    2.
    发明授权
    Semiconductor memory device employing clamp for preventing latch up 有权
    半导体存储器件采用夹具防止闩锁

    公开(公告)号：US07417909B2

    公开(公告)日：2008-08-26

    申请号：US11019570

    申请日：2004-12-23

    申请人： Sang-Jin Byeon ,  Kang-Seol Lee

    发明人： Sang-Jin Byeon ,  Kang-Seol Lee

    IPC分类号： G11C7/00

    CPC分类号： G11C7/12 ,  G11C7/06

    摘要： A semiconductor memory device employs a clamp for preventing latch up. For the purpose, the semiconductor memory device includes a precharging/equalizing unit for precharging and equalizing a pair of bit lines, and a control signal generating unit for producing a control signal which controls enable and disable of the precharging/equalizing unit, wherein the control signal generating unit includes a clamping unit to clamp its source voltage to a voltage level lower than that of its bulk bias.

    摘要翻译： 半导体存储器件采用夹具来防止闩锁。 为此，半导体存储器件包括用于对一对位线进行预充电和均衡的预充电/均衡单元，以及用于产生控制预充电/均衡单元的使能和禁能的控制信号的控制信号产生单元，其中控制 信号发生单元包括钳位单元，用于将其源极电压钳位到低于其体积偏压的电压电平。

    Semiconductor memory device employing clamp for preventing latch up
    3.
    发明申请
    Semiconductor memory device employing clamp for preventing latch up 有权
    半导体存储器件采用夹具防止闩锁

    公开(公告)号：US20050237833A1

    公开(公告)日：2005-10-27

    申请号：US11019570

    申请日：2004-12-23

    申请人： Sang-Jin Byeon ,  Kang-Seol Lee

    发明人： Sang-Jin Byeon ,  Kang-Seol Lee

    IPC分类号： G11C7/00 ,  G11C7/06 ,  G11C7/12

    CPC分类号： G11C7/12 ,  G11C7/06

    摘要： A semiconductor memory device employs a clamp for preventing latch up. For the purpose, the semiconductor memory device includes a precharging/equalizing unit for precharging and equalizing a pair of bit lines, and a control signal generating unit for producing a control signal which controls enable and disable of the precharging/equalizing unit, wherein the control signal generating unit includes a clamping unit to clamp its source voltage to a voltage level lower than that of its bulk bias.

    摘要翻译： 半导体存储器件采用夹具来防止闩锁。 为此，半导体存储器件包括用于对一对位线进行预充电和均衡的预充电/均衡单元，以及用于产生控制预充电/均衡单元的使能和禁能的控制信号的控制信号产生单元，其中控制 信号发生单元包括钳位单元，用于将其源极电压钳位到低于其体积偏压的电压电平。

    Semiconductor memory device employing clamp for preventing latch up
    4.
    发明申请
    Semiconductor memory device employing clamp for preventing latch up 有权

    公开(公告)号：US20080285356A1

    公开(公告)日：2008-11-20

    申请号：US12219572

    申请日：2008-07-24

    申请人： Sang-Jin Byeon ,  Kang-Seol Lee

    发明人： Sang-Jin Byeon ,  Kang-Seol Lee

    IPC分类号： G11C7/00 ,  G11C8/00

    CPC分类号： G11C7/12 ,  G11C7/06

    摘要： A semiconductor memory device employs a clamp for preventing latch up. For the purpose, the semiconductor memory device includes a precharging/equalizing unit for precharging and equalizing a pair of bit lines, and a control signal generating unit for producing a control signal which controls enable and disable of the precharging/equalizing unit, wherein the control signal generating unit includes a clamping unit to clamp its source voltage to a voltage level lower than that of its bulk bias.

    Word line driver, method for driving the word line driver, and semiconductor memory device having the word line driver
    5.
    发明授权
    Word line driver, method for driving the word line driver, and semiconductor memory device having the word line driver 有权
    字线驱动器，用于驱动字线驱动器的方法，以及具有字线驱动器的半导体存储器件

    公开(公告)号：US08050133B2

    公开(公告)日：2011-11-01

    申请号：US12327541

    申请日：2008-12-03

    申请人： Tae-Sik Yun ,  Kang-Seol Lee

    发明人： Tae-Sik Yun ,  Kang-Seol Lee

    IPC分类号： G11C8/00

    CPC分类号： G11C8/08 ,  G11C8/12 ,  G11C8/14 ,  G11C8/18

    摘要： A word line driver, a method for driving the word line driver, and a semiconductor memory device having the word line driver. The word line driver receives a main word line driving signal and a sub word line driving signal, to drive a word line with a word line driving signal, wherein the word line is driven concurrently with an activation of the main word line driving signal. The word line driver can reduce the unnecessary current consumption.

    摘要翻译： 字线驱动器，用于驱动字线驱动器的方法，以及具有字线驱动器的半导体存储器件。 字线驱动器接收主字线驱动信号和副字线驱动信号，用字线驱动信号驱动字线，其中字线与主字线驱动信号的激活同时被驱动。 字线驱动器可以减少不必要的电流消耗。

    Internal voltage generating circuit
    6.
    发明授权
    Internal voltage generating circuit 有权
    内部电压发生电路

    公开(公告)号：US07978003B2

    公开(公告)日：2011-07-12

    申请号：US12630657

    申请日：2009-12-03

    申请人： Kang-Seol Lee ,  Jae-Hyuk Im

    发明人： Kang-Seol Lee ,  Jae-Hyuk Im

    IPC分类号： G05F1/10 ,  G05F3/02

    CPC分类号： G11C5/14

    摘要： There is an internal voltage generating circuit for providing a stable high voltage by making a response time short. The internal voltage generating circuit includes a charge pump unit for generate a high voltage being higher than an external voltage in response to pumping control signals and a supply driving control signal; a pumping control signal generating unit for outputting the pumping control signals to the charge pump unit based on a driving signal; and a supply driving control unit for receiving the driving signal to generate the supply driving control signal to the charge pump unit.

    摘要翻译： 存在内部电压产生电路，用于通过使响应时间短而提供稳定的高电压。 内部电压产生电路包括电荷泵单元，用于响应于泵送控制信号和电源驱动控制信号而产生高于外部电压的高电压; 泵送控制信号产生单元，用于基于驱动信号将泵送控制信号输出到电荷泵单元; 以及电源驱动控制单元，用于接收驱动信号以向电荷泵单元产生电源驱动控制信号。

    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME
    7.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME 有权
    半导体存储器件及其驱动方法

    公开(公告)号：US20110158023A1

    公开(公告)日：2011-06-30

    申请号：US12829987

    申请日：2010-07-02

    申请人： Tae-Sik Yun ,  Kang-Seol Lee

    发明人： Tae-Sik Yun ,  Kang-Seol Lee

    IPC分类号： G11C7/06

    CPC分类号： G11C11/4091 ,  G11C7/08 ,  G11C7/1048 ,  G11C11/4087 ,  G11C2207/005

    摘要： A semiconductor memory device includes a cell block including a first bit line, a sense amplifier unit including a second bit line and configured to amplify a data signal applied to the second bit line, a connection unit configured to selectively connect the first bit line and the second bit line, a connection control unit configured to receive a control signal for driving the sense amplifier unit and a selection signal for selecting the cell block and generate a connection signal for activating the connection unit at a first time, and a sense amplifier driving control unit configured to receive the control signal and generate a sense amplifier driving signal for driving the sense amplifier unit at a second time after the first time.

    摘要翻译： 半导体存储器件包括：包括第一位线的单元块，包括第二位线的读出放大器单元，用于放大施加到第二位线的数据信号;连接单元，被配置为选择性地将第一位线和 第二位线，连接控制单元，被配置为接收用于驱动读出放大器单元的控制信号和用于选择单元块的选择信号，并且在第一时间产生用于激活连接单元的连接信号，以及读出放大器驱动控制 被配置为接收控制信号并且在第一次之后的第二时间产生用于驱动读出放大器单元的读出放大器驱动信号。

    Semiconductor memory device and driving method thereof
    8.
    发明授权
    Semiconductor memory device and driving method thereof 有权
    半导体存储器件及其驱动方法

    公开(公告)号：US07936614B2

    公开(公告)日：2011-05-03

    申请号：US12336164

    申请日：2008-12-16

    申请人： Ki-Ho Kim ,  Kang-Seol Lee

    发明人： Ki-Ho Kim ,  Kang-Seol Lee

    IPC分类号： G11C7/06

    CPC分类号： G11C7/1078 ,  G11C5/143 ,  G11C7/1051 ,  G11C7/1057 ,  G11C7/1066 ,  G11C7/1084 ,  G11C11/4074 ,  G11C11/4093

    摘要： A semiconductor memory device includes a data input driver and a data output driver for receiving an external power supply voltage, and for inputting and outputting data, respectively; and a voltage detector for detecting the external power supply voltage to generate a detection signal, wherein a drive current of each of the data input driver and the data output driver is controlled by the detection signal.

    摘要翻译： 半导体存储器件包括数据输入驱动器和用于接收外部电源电压的数据输出驱动器，并分别用于输入和输出数据; 以及电压检测器，用于检测外部电源电压以产生检测信号，其中数据输入驱动器和数据输出驱动器中的每一个的驱动电流由检测信号控制。

    WORD LINE DRIVER, METHOD FOR DRIVING THE WORD LINE DRIVER, AND SEMICONDUCTOR MEMORY DEVICE HAVING THE WORD LINE DRIVER
    9.
    发明申请
    WORD LINE DRIVER, METHOD FOR DRIVING THE WORD LINE DRIVER, AND SEMICONDUCTOR MEMORY DEVICE HAVING THE WORD LINE DRIVER 有权
    字线驱动器，驱动字线驱动器的方法和具有字线驱动器的半导体存储器件

    公开(公告)号：US20090323455A1

    公开(公告)日：2009-12-31

    申请号：US12327541

    申请日：2008-12-03

    申请人： Tae-Sik YUN ,  Kang-Seol Lee

    发明人： Tae-Sik YUN ,  Kang-Seol Lee

    IPC分类号： G11C8/08

    CPC分类号： G11C8/08 ,  G11C8/12 ,  G11C8/14 ,  G11C8/18

    摘要： A word line driver, a method for driving the word line driver, and a semiconductor memory device having the word line driver. The word line driver receives a main word line driving signal and a sub word line driving signal, to drive a word line with a word line driving signal, wherein the word line is driven concurrently with an activation of the main word line driving signal. The word line driver can reduce the unnecessary current consumption.

    摘要翻译： 字线驱动器，用于驱动字线驱动器的方法，以及具有字线驱动器的半导体存储器件。 字线驱动器接收主字线驱动信号和副字线驱动信号，用字线驱动信号驱动字线，其中字线与主字线驱动信号的激活同时被驱动。 字线驱动器可以减少不必要的电流消耗。

    Device for supplying temperature dependent negative voltage
    10.
    发明申请
    Device for supplying temperature dependent negative voltage 审中-公开
    提供温度依赖负电压的装置

    公开(公告)号：US20080186080A1

    公开(公告)日：2008-08-07

    申请号：US12000232

    申请日：2007-12-11

    申请人： Kang-Seol Lee

    发明人： Kang-Seol Lee

    IPC分类号： G05F3/02 ,  G05F3/16

    CPC分类号： G11C8/08 ,  G11C5/145 ,  G11C7/04

    摘要： A negative voltage supply device includes a negative voltage detector and a negative voltage pumping unit. The negative voltage pumping unit pumps a negative voltage in response to a detection signal. The negative voltage detector detects a level of a negative voltage by using a first element and a second element, which are different in the degree of change in their respective resistance values depending on the temperature, and outputs the detection signal. The detection signal informs the negative voltage pumping unit that pumping of the negative voltage is no longer needed.

    摘要翻译： 负电压供给装置包括负电压检测器和负电压抽吸单元。 负电压抽吸单元响应于检测信号泵送负电压。 负电压检测器通过使用根据温度的各自电阻值的变化程度不同的第一元件和第二元件来检测负电压的电平，并输出检测信号。 检测信号通知负电压抽运单元不再需要泵送负电压。