公开(公告)号：US20120055908A1

公开(公告)日：2012-03-08

申请号：US13220084

申请日：2011-08-29

申请人： Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

发明人： Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

IPC分类号： B23K26/36 ,  B23K26/04

CPC分类号： B23K26/0661 ,  B23K26/032 ,  B23K26/361 ,  H01J37/32972 ,  H01L22/12 ,  H01L22/26

摘要： Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.

摘要翻译： 提供了蚀刻系统和控制蚀刻工艺条件的方法。 蚀刻系统包括将入射光照射到目标晶片中的光源，光强度测量单元，其根据由来自目标晶片的反射光之间的干涉产生的干涉光的波长来测量光强度;信号处理器，其检测 当干扰光的强度根据波长变化时产生强度极值的时间点，以及将从信号处理器检测的极值产生时间点与对应于极值的参考时间点进行比较的控制器 产生时间点，并根据比较结果控制过程条件。

公开(公告)号：US08872059B2

公开(公告)日：2014-10-28

申请号：US13220084

申请日：2011-08-29

申请人： Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

发明人： Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

IPC分类号： B23K26/03 ,  B23K26/04 ,  H01L21/00 ,  B23K26/06 ,  H01L21/66 ,  H01J37/32 ,  B23K26/36

CPC分类号： B23K26/0661 ,  B23K26/032 ,  B23K26/361 ,  H01J37/32972 ,  H01L22/12 ,  H01L22/26

摘要： Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.

摘要翻译： 提供了蚀刻系统和控制蚀刻工艺条件的方法。 蚀刻系统包括将入射光照射到目标晶片中的光源，光强度测量单元，其根据由来自目标晶片的反射光之间的干涉产生的干涉光的波长来测量光强度;信号处理器，其检测 当干扰光的强度根据波长变化时产生强度极值的时间点，以及将从信号处理器检测的极值产生时间点与对应于极值的参考时间点进行比较的控制器 产生时间点，并根据比较结果控制过程条件。

公开(公告)号：US20110063128A1

公开(公告)日：2011-03-17

申请号：US12858691

申请日：2010-08-18

申请人： Sang-Wuk Park ,  Woo-Seok Kim ,  Yong-Jin Kim

发明人： Sang-Wuk Park ,  Woo-Seok Kim ,  Yong-Jin Kim

IPC分类号： H04J14/08

CPC分类号： H04J14/08 ,  H01L21/67069 ,  H01L21/67253

摘要： A chamber-status monitoring apparatus includes a plurality of chambers, a time-division multiplexer configured to receive, via optical fiber probes, optical signals from each chamber, to divide each optical signal into first time slots having a predetermined duration, and to multiplex the first time slots to generate an OTDM signal, a multi-input optical emission spectroscope configured to receive and disperse the OTDM signal according to wavelengths to measure spectrum information, and a controller configured to divide the spectrum information of the dispersed OTDM signal into second time slots with a predetermined time interval therebetween, to classify the second time slots according to the chambers to obtain spectrum information of the optical signals of the individual chambers, and to control endpoint detection in each of the chambers in accordance with the spectrum information of the optical signal of the corresponding chamber.

摘要翻译： 室状态监视装置包括多个室，时分多路复用器，被配置为经由光纤探针从每个室接收光信号，以将每个光信号划分成具有预定持续时间的第一时隙，并将多路复用 用于产生OTDM信号的第一时隙;被配置为根据波长接收和分散OTDM信号以测量频谱信息的多输入光发射分光器;以及控制器，被配置为将分散的OTDM信号的频谱信息划分为第二时隙 以其间的预定时间间隔，根据室对第二时隙进行分类，以获得各个室的光信号的频谱信息，并且根据光信号的频谱信息来控制每个室中的端点检测 相应的房间。

公开(公告)号：US08304264B2

公开(公告)日：2012-11-06

申请号：US12858691

申请日：2010-08-18

申请人： Sang-Wuk Park ,  Woo-Seok Kim ,  Yong-Jin Kim

发明人： Sang-Wuk Park ,  Woo-Seok Kim ,  Yong-Jin Kim

IPC分类号： G01R31/26

CPC分类号： H04J14/08 ,  H01L21/67069 ,  H01L21/67253

摘要： A chamber-status monitoring apparatus includes a plurality of chambers, a time-division multiplexer configured to receive, via optical fiber probes, optical signals from each chamber, to divide each optical signal into first time slots having a predetermined duration, and to multiplex the first time slots to generate an OTDM signal, a multi-input optical emission spectroscope configured to receive and disperse the OTDM signal according to wavelengths to measure spectrum information, and a controller configured to divide the spectrum information of the dispersed OTDM signal into second time slots with a predetermined time interval therebetween, to classify the second time slots according to the chambers to obtain spectrum information of the optical signals of the individual chambers, and to control endpoint detection in each of the chambers in accordance with the spectrum information of the optical signal of the corresponding chamber.

摘要翻译： 室状态监视装置包括多个室，时分多路复用器，被配置为经由光纤探针从每个室接收光信号，以将每个光信号划分成具有预定持续时间的第一时隙，并将多路复用 用于产生OTDM信号的第一时隙;被配置为根据波长接收和分散OTDM信号以测量频谱信息的多输入光发射分光器;以及控制器，被配置为将分散的OTDM信号的频谱信息划分为第二时隙 以其间的预定时间间隔，根据室对第二时隙进行分类，以获得各个室的光信号的频谱信息，并且根据光信号的频谱信息来控制每个室中的端点检测 相应的房间。