公开(公告)号：US07138675B2

公开(公告)日：2006-11-21

申请号：US11077838

申请日：2005-03-11

申请人： Sang-hyeon Lee ,  Chang-hyun Cho ,  Yang-keun Park

发明人： Sang-hyeon Lee ,  Chang-hyun Cho ,  Yang-keun Park

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/91 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885

摘要： A semiconductor device is manufactured by forming a first insulating layer on a semiconductor substrate. First contact pads and second contact pads are formed that penetrate through the first insulating layer and are electrically connected to the semiconductor substrate. A second insulating layer is formed that has guide contact holes that expose upper surfaces of the first contact pads. An etch stopper is formed on bottoms and sidewalls of the guide contact holes of the second insulating layer. Bit lines are formed that are electrically connected to the semiconductor substrate by the second contact pads. The bit lines are electrically isolated from the first contact pads.

摘要翻译： 通过在半导体衬底上形成第一绝缘层来制造半导体器件。 形成穿过第一绝缘层并与半导体衬底电连接的第一接触焊盘和第二接触焊盘。 形成具有暴露第一接触垫的上表面的引导接触孔的第二绝缘层。 在第二绝缘层的引导接触孔的底部和侧壁上形成蚀刻停止层。 形成通过第二接触焊盘电连接到半导体衬底的位线。 位线与第一接触焊盘电隔离。

公开(公告)号：US06902998B2

公开(公告)日：2005-06-07

申请号：US10404401

申请日：2003-04-01

申请人： Sang-hyeon Lee ,  Chang-hyun Cho ,  Yang-keun Park

发明人： Sang-hyeon Lee ,  Chang-hyun Cho ,  Yang-keun Park

IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/44 ,  H01L21/8242 ,  H01L29/00 ,  H01L29/02

CPC分类号： H01L28/91 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885

摘要： A semiconductor device is manufactured by forming a first insulating layer on a semiconductor substrate. First contact pads and second contact pads are formed that penetrate through the first insulating layer and are electrically connected to the semiconductor substrate. A second insulating layer is formed that has guide contact holes that expose upper surfaces of the first contact pads. An etch stopper is formed on bottoms and sidewalls of the guide contact holes of the second insulating layer. Bit lines are formed that are electrically connected to the semiconductor substrate by the second contact pads. The bit lines are electrically isolated from the first contact pads.

摘要翻译： 通过在半导体衬底上形成第一绝缘层来制造半导体器件。 形成穿过第一绝缘层并与半导体衬底电连接的第一接触焊盘和第二接触焊盘。 形成具有暴露第一接触垫的上表面的引导接触孔的第二绝缘层。 在第二绝缘层的引导接触孔的底部和侧壁上形成蚀刻停止层。 形成通过第二接触焊盘电连接到半导体衬底的位线。 位线与第一接触焊盘电隔离。

公开(公告)号：US20050156272A1

公开(公告)日：2005-07-21

申请号：US11077838

申请日：2005-03-11

申请人： Sang-hyeon Lee ,  Chang-hyun Cho ,  Yang-keun Park

发明人： Sang-hyeon Lee ,  Chang-hyun Cho ,  Yang-keun Park

IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/44 ,  H01L21/8242 ,  H01L29/00 ,  H01L29/02

CPC分类号： H01L28/91 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885

摘要： A semiconductor device is manufactured by forming a first insulating layer on a semiconductor substrate. First contact pads and second contact pads are formed that penetrate through the first insulating layer and are electrically connected to the semiconductor substrate. A second insulating layer is formed that has guide contact holes that expose upper surfaces of the first contact pads. An etch stopper is formed on bottoms and sidewalls of the guide contact holes of the second insulating layer. Bit lines are formed that are electrically connected to the semiconductor substrate by the second contact pads. The bit lines are electrically isolated from the first contact pads.

摘要翻译： 通过在半导体衬底上形成第一绝缘层来制造半导体器件。 形成穿过第一绝缘层并与半导体衬底电连接的第一接触焊盘和第二接触焊盘。 形成具有暴露第一接触垫的上表面的引导接触孔的第二绝缘层。 在第二绝缘层的引导接触孔的底部和侧壁上形成蚀刻停止层。 形成通过第二接触焊盘电连接到半导体衬底的位线。 位线与第一接触焊盘电隔离。

公开(公告)号：US20080081267A1

公开(公告)日：2008-04-03

申请号：US11836256

申请日：2007-08-09

申请人： Hong-seok Sim ,  Moon-gyu Sung ,  Sang-hyeon Lee

发明人： Hong-seok Sim ,  Moon-gyu Sung ,  Sang-hyeon Lee

IPC分类号： G03F1/00

CPC分类号： G03F1/72

摘要： A method of repairing a photomask with a depression defect includes providing a photomask including a depression defect on a transparent substrate, forming a protection layer which covers the depression defect, etching a predetermined depth of the transparent substrate of the photomask with the protection layer as the etch mask, and removing the protection layer and the transparent substrate under the unetched protection layer, wherein a defect tree photomask is produced.

摘要翻译： 修复具有凹陷缺陷的光掩模的方法包括在透明基板上提供包括凹陷缺陷的光掩模，形成覆盖凹陷缺陷的保护层，用保护层蚀刻光掩模的透明基板的预定深度作为 蚀刻掩模，并且在未蚀刻保护层下移除保护层和透明基板，其中制造缺陷树光掩模。

公开(公告)号：US07119389B2

公开(公告)日：2006-10-10

申请号：US10425231

申请日：2003-04-29

申请人： Sang-hyeon Lee ,  Dong-il Bae

发明人： Sang-hyeon Lee ,  Dong-il Bae

IPC分类号： H01L29/76 ,  H01L29/84 ,  H01L31/62 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/10852 ,  H01L21/76895 ,  H01L27/0207 ,  H01L28/60

摘要： DRAM cells include a common drain region in an integrated circuit substrate and first and second source regions in the integrated circuit substrate, a respective one of which is laterally offset from the common drain region along respective first and second opposite directions. First and second storage nodes are provided on the integrated circuit substrate, a respective one of which is electrically connected to a respective one of the first and second source regions. The first and second storage nodes are laterally offset from the respective first and second source regions along the first direction.

摘要翻译： DRAM单元包括集成电路衬底中的公共漏极区域和集成电路衬底中的第一和第二源极区域，其相应的一个沿相应的第一和第二相反方向从公共漏极区域侧向偏移。 第一和第二存储节点设置在集成电路基板上，其相应的一个电连接到第一和第二源极区域中的相应一个。 第一和第二存储节点沿着第一方向从相应的第一和第二源区域侧向偏移。

公开(公告)号：US09817309B2

公开(公告)日：2017-11-14

申请号：US14700175

申请日：2015-04-30

申请人： Jung-hwan Lee ,  Byung-gook Kim ,  Sang-hyeon Lee

发明人： Jung-hwan Lee ,  Byung-gook Kim ,  Sang-hyeon Lee

IPC分类号： G03F1/72 ,  G03F1/74

CPC分类号： G03F1/74 ,  G03F1/72

摘要： Provided are photomasks, methods of fabricating the photomasks, and methods of fabricating a semiconductor device by using the photomasks, in which a critical dimension (CD) of a pattern of a specific region of the photomask is corrected to improve the distribution of CDs of the pattern formed on a wafer. The photomasks may include a substrate and a light-blocking pattern formed on the substrate that includes an absorber layer and an anti-reflection coating (ARC) layer. The light-blocking pattern may include at least one of a first corrected area in which a top surface of the absorber layer is exposed, and a second corrected area in which a correction layer is formed on the ARC layer.

公开(公告)号：US20160048073A1

公开(公告)日：2016-02-18

申请号：US14700175

申请日：2015-04-30

申请人： Jung-hwan Lee ,  Byung-gook Kim ,  Sang-hyeon Lee

发明人： Jung-hwan Lee ,  Byung-gook Kim ,  Sang-hyeon Lee

IPC分类号： G03F1/76 ,  G03F1/72 ,  G03F1/74 ,  G03F1/78

CPC分类号： G03F1/74 ,  G03F1/72

摘要： Provided are photomasks, methods of fabricating the photomasks, and methods of fabricating a semiconductor device by using the photomasks, in which a critical dimension (CD) of a pattern of a specific region of the photomask is corrected to improve the distribution of CDs of the pattern formed on a wafer. The photomasks may include a substrate and a light-blocking pattern formed on the substrate that includes an absorber layer and an anti-reflection coating (ARC) layer. The light-blocking pattern may include at least one of a first corrected area in which a top surface of the absorber layer is exposed, and a second corrected area in which a correction layer is formed on the ARC layer.

摘要翻译： 提供光掩模，制造光掩模的方法以及通过使用光掩模制造半导体器件的方法，其中校正光掩模的特定区域的图案的临界尺寸（CD）以改善光掩模的CD的分布 图案形成在晶片上。 光掩模可以包括衬底和形成在衬底上的遮光图案，其包括吸收层和抗反射涂层（ARC）层。 遮光图案可以包括其中暴露吸收层的顶表面的第一校正区域和其中在ARC层上形成校正层的第二校正区域中的至少一个。

公开(公告)号：US07785754B2

公开(公告)日：2010-08-31

申请号：US11836256

申请日：2007-08-09

申请人： Hong-seok Sim ,  Moon-gyu Sung ,  Sang-hyeon Lee

发明人： Hong-seok Sim ,  Moon-gyu Sung ,  Sang-hyeon Lee

IPC分类号： G03F1/00

CPC分类号： G03F1/72

摘要： A method of repairing a photomask with a depression defect includes providing a photomask including a depression defect on a transparent substrate, forming a protection layer which covers the depression defect, etching a predetermined depth of the transparent substrate of the photomask with the protection layer as the etch mask, and removing the protection layer and the transparent substrate under the unetched protection layer, wherein a defect free photomask is produced.

摘要翻译： 修复具有凹陷缺陷的光掩模的方法包括在透明基板上提供包括凹陷缺陷的光掩模，形成覆盖凹陷缺陷的保护层，用保护层蚀刻光掩模的透明基板的预定深度作为 蚀刻掩模，并且在未蚀刻的保护层下去除保护层和透明基板，其中制造无缺陷的光掩模。

公开(公告)号：US07504295B2

公开(公告)日：2009-03-17

申请号：US11470011

申请日：2006-09-05

申请人： Sang-hyeon Lee ,  Dong-il Bae

发明人： Sang-hyeon Lee ,  Dong-il Bae

IPC分类号： H01L21/8238 ,  H01L21/8234 ,  H01L21/8244

CPC分类号： H01L27/10852 ,  H01L21/76895 ,  H01L27/0207 ,  H01L28/60

摘要： DRAM cells include a common drain region in an integrated circuit substrate and first and second source regions in the integrated circuit substrate, a respective one of which is laterally offset from the common drain region along respective first and second opposite directions. First and second storage nodes are provided on the integrated circuit substrate, a respective one of which is electrically connected to a respective one of the first and second source regions. The first and second storage nodes are laterally offset from the respective first and second source regions along the first direction.

摘要翻译： DRAM单元包括集成电路衬底中的公共漏极区域和集成电路衬底中的第一和第二源极区域，其相应的一个沿相应的第一和第二相反方向从公共漏极区域侧向偏移。 第一和第二存储节点设置在集成电路基板上，其相应的一个电连接到第一和第二源极区域中的相应一个。 第一和第二存储节点沿着第一方向从相应的第一和第二源区域侧向偏移。

公开(公告)号：US20070026603A1

公开(公告)日：2007-02-01

申请号：US11470011

申请日：2006-09-05

申请人： Sang-hyeon Lee ,  Dong-il Bae

发明人： Sang-hyeon Lee ,  Dong-il Bae

IPC分类号： H01L21/8242

CPC分类号： H01L27/10852 ,  H01L21/76895 ,  H01L27/0207 ,  H01L28/60

摘要： DRAM cells include a common drain region in an integrated circuit substrate and first and second source regions in the integrated circuit substrate, a respective one of which is laterally offset from the common drain region along respective first and second opposite directions. First and second storage nodes are provided on the integrated circuit substrate, a respective one of which is electrically connected to a respective one of the first and second source regions. The first and second storage nodes are laterally offset from the respective first and second source regions along the first direction.

摘要翻译： DRAM单元包括集成电路衬底中的公共漏极区域和集成电路衬底中的第一和第二源极区域，其相应的一个沿相应的第一和第二相反方向从公共漏极区域侧向偏移。 第一和第二存储节点设置在集成电路基板上，其相应的一个电连接到第一和第二源极区域中的相应一个。 第一和第二存储节点沿着第一方向从相应的第一和第二源区域侧向偏移。