公开(公告)号：US20180137925A1

公开(公告)日：2018-05-17

申请号：US15447357

申请日：2017-03-02

申请人： Sang-wan NAM ,  Dae-seok BYEON ,  Chi-weon YOON

发明人： Sang-wan NAM ,  Dae-seok BYEON ,  Chi-weon YOON

IPC分类号： G11C16/34 ,  G11C16/04 ,  G11C16/28 ,  G11C16/10 ,  G11C16/16

CPC分类号： G11C16/3431 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/16 ,  G11C16/28 ,  G11C16/30 ,  G11C16/32 ,  G11C16/3459

摘要： Provided are a nonvolatile memory device and a method of performing a sensing operation on the nonvolatile memory device. The nonvolatile memory device includes a control logic coupled to a memory cell array including strings. The control logic is configured to control a first weak-on voltage applied to an unselected string selection line and a second weak-on voltage applied to an unselected ground selection line during a setup interval of the sensing operation for sensing data from a selected string. The unselected string selection line and ground selection line are connected to a string selection transistor and a ground selection transistor, respectively, of a same unselected string. The selected string and the unselected string are connected to a same bit line. The first weak-on voltage and second weak-on voltage are respectively less than a threshold voltage of the string selection transistor and the ground selection transistor in the unselected string.