公开(公告)号：US09842659B2

公开(公告)日：2017-12-12

申请号：US14616281

申请日：2015-02-06

申请人： Sang-wan Nam ,  Byung-gil Jeon ,  Dae-seok Byeon

发明人： Sang-wan Nam ,  Byung-gil Jeon ,  Dae-seok Byeon

IPC分类号： G11C11/34 ,  G11C29/02 ,  G11C29/12 ,  G11C29/50

CPC分类号： G11C29/025 ,  G11C2029/1202 ,  G11C2029/5006

摘要： Provided are a non-volatile memory device, a memory system, and a method of operating the non-volatile memory device. The method includes: performing a user operation according to at least one mode selected from among a writing mode, a reading mode, and an erasing mode with respect to a memory cell array; setting up voltages of a plurality of word lines; floating at least one word line from among the plurality of word lines, the voltages of which are set up, according to the at least one selected mode; and detecting whether the at least one word line has a progressive defect, according to a result of detecting a voltage level of the at least one floated word line.

公开(公告)号：US10043583B2

公开(公告)日：2018-08-07

申请号：US15447357

申请日：2017-03-02

申请人： Sang-wan Nam ,  Dae-seok Byeon ,  Chi-weon Yoon

发明人： Sang-wan Nam ,  Dae-seok Byeon ,  Chi-weon Yoon

IPC分类号： G11C11/34 ,  G11C16/34 ,  G11C16/04 ,  G11C16/28 ,  G11C16/10 ,  G11C16/16

摘要： Provided are a nonvolatile memory device and a method of performing a sensing operation on the nonvolatile memory device. The nonvolatile memory device includes a control logic coupled to a memory cell array including strings. The control logic is configured to control a first weak-on voltage applied to an unselected string selection line and a second weak-on voltage applied to an unselected ground selection line during a setup interval of the sensing operation for sensing data from a selected string. The unselected string selection line and ground selection line are connected to a string selection transistor and a ground selection transistor, respectively, of a same unselected string. The selected string and the unselected string are connected to a same bit line. The first weak-on voltage and second weak-on voltage are respectively less than a threshold voltage of the string selection transistor and the ground selection transistor in the unselected string.

公开(公告)号：US07697347B2

公开(公告)日：2010-04-13

申请号：US11972819

申请日：2008-01-11

申请人： Dae-seok Byeon

发明人： Dae-seok Byeon

IPC分类号： G11C7/10

CPC分类号： G11C16/20

摘要： A method of driving a non-volatile memory device includes supplying power to the memory device, in which setting information related to setting an operating environment is copied and stored in multiple of regions of a memory cell array. An initial read operation of the memory cell array is performed and initial setting data is determined based on the initial read operation. The operating environment of the memory device is set based on the initial setting data. Corresponding portions of the stored copies of the setting information are read at the same time.

摘要翻译： 一种驱动非易失性存储器件的方法包括向存储器件供电，其中与存储器单元阵列的多个区域复制和存储与设置操作环境有关的设置信息。 执行存储单元阵列的初始读取操作，并且基于初始读取操作来确定初始设置数据。 基于初始设定数据设定存储装置的运行环境。 同时读取设置信息的存储副本的相应部分。

公开(公告)号：US20140153338A1

公开(公告)日：2014-06-05

申请号：US14050430

申请日：2013-10-10

申请人： Dae-seok Byeon ,  Bo-geun Kim ,  Jae-woo Park

发明人： Dae-seok Byeon ,  Bo-geun Kim ,  Jae-woo Park

IPC分类号： G11C16/28

CPC分类号： G11C16/0483 ,  G11C16/26 ,  G11C16/28 ,  G11C16/3404 ,  G11C16/3422

摘要： A method is provided for operating a memory system. The method includes reading nonvolatile memory cells using a first soft read voltage, a voltage level difference between the first soft read voltage and a first hard read voltage being indicated by a first voltage value; and reading the nonvolatile memory cells using a second soft read voltage paired with the first soft read voltage, a voltage level difference between the second soft read voltage and the first hard read voltage being indicated by a second voltage value. The second voltage value is different than the first voltage value. Also, a difference between the first voltage value and the second voltage value corresponds to the degree of asymmetry of adjacent threshold voltage distributions among multiple threshold voltage distributions set for the nonvolatile memory cells of the memory system.

摘要翻译： 提供了一种用于操作存储器系统的方法。 该方法包括使用第一软读取电压读取非易失性存储器单元，由第一电压值表示第一软读取电压和第一硬读取电压之间的电压电平差; 以及使用与第一软读取电压成对的第二软读取电压读取非易失性存储单元，第二软读取电压和第一硬读取电压之间的电压电平差由第二电压值指示。 第二电压值不同于第一电压值。 此外，第一电压值和第二电压值之间的差异对应于针对存储器系统的非易失性存储器单元设置的多个阈值电压分布中的相邻阈值电压分布的不对称程度。

公开(公告)号：US08923067B2

公开(公告)日：2014-12-30

申请号：US14050430

申请日：2013-10-10

申请人： Dae-seok Byeon ,  Bo-geun Kim ,  Jae-woo Park

发明人： Dae-seok Byeon ,  Bo-geun Kim ,  Jae-woo Park

IPC分类号： G11C16/28 ,  G11C16/04 ,  G11C16/26 ,  G11C16/34

CPC分类号： G11C16/0483 ,  G11C16/26 ,  G11C16/28 ,  G11C16/3404 ,  G11C16/3422

摘要： A method is provided for operating a memory system. The method includes reading nonvolatile memory cells using a first soft read voltage, a voltage level difference between the first soft read voltage and a first hard read voltage being indicated by a first voltage value; and reading the nonvolatile memory cells using a second soft read voltage paired with the first soft read voltage, a voltage level difference between the second soft read voltage and the first hard read voltage being indicated by a second voltage value. The second voltage value is different than the first voltage value. Also, a difference between the first voltage value and the second voltage value corresponds to the degree of asymmetry of adjacent threshold voltage distributions among multiple threshold voltage distributions set for the nonvolatile memory cells of the memory system.

摘要翻译： 提供了一种用于操作存储器系统的方法。 该方法包括使用第一软读取电压读取非易失性存储器单元，由第一电压值表示第一软读取电压和第一硬读取电压之间的电压电平差; 以及使用与第一软读取电压成对的第二软读取电压读取非易失性存储单元，第二软读取电压和第一硬读取电压之间的电压电平差由第二电压值指示。 第二电压值不同于第一电压值。 此外，第一电压值和第二电压值之间的差异对应于针对存储器系统的非易失性存储器单元设置的多个阈值电压分布中的相邻阈值电压分布的不对称程度。

公开(公告)号：US07660155B2

公开(公告)日：2010-02-09

申请号：US11951556

申请日：2007-12-06

申请人： Dae-seok Byeon

发明人： Dae-seok Byeon

IPC分类号： G11C11/34

CPC分类号： G11C16/20 ,  G11C29/82

摘要： A non-volatile memory device capable of stably setting its operating environment and a method of driving the non-volatile memory device are provided. The method includes providing power to the non-volatile memory device having a memory cell array that stores initial setting data for setting the operating environment of the non-volatile memory device. An initial read operation is performed on the memory cell array. The operating environment of the non-volatile memory device is set using the initial setting data that is read through the initial read operation. The initial setting data stored in the memory cell array includes main data having information about the operating environment to be set and an indicator corresponding to the main data for indicating a start and an end of the main data.

摘要翻译： 提供一种能够稳定地设定其工作环境的非易失性存储装置和驱动非易失性存储装置的方法。 该方法包括向具有存储用于设置非易失性存储器件的操作环境的初始设置数据的存储单元阵列的非易失性存储器件提供电力。 对存储单元阵列进行初始读取操作。 使用通过初始读取操作读取的初始设置数据来设置非易失性存储器件的操作环境。 存储在存储单元阵列中的初始设置数据包括具有关于要设置的操作环境的信息的主数据和与用于指示主数据的开始和结束的主数据相对应的指示符。

公开(公告)号：US20080205151A1

公开(公告)日：2008-08-28

申请号：US11951556

申请日：2007-12-06

申请人： Dae-seok Byeon

发明人： Dae-seok Byeon

IPC分类号： G11C16/00 ,  G11C29/04 ,  G11C5/14

CPC分类号： G11C16/20 ,  G11C29/82

摘要： A non-volatile memory device capable of stably setting its operating environment and a method of driving the non-volatile memory device are provided. The method includes providing power to the non-volatile memory device having a memory cell array that stores initial setting data for setting the operating environment of the non-volatile memory device. An initial read operation is performed on the memory cell array. The operating environment of the non-volatile memory device is set using the initial setting data that is read through the initial read operation. The initial setting data stored in the memory cell array includes main data having information about the operating environment to be set and an indicator corresponding to the main data for indicating a start and an end of the main data.

摘要翻译： 提供一种能够稳定地设定其工作环境的非易失性存储装置和驱动非易失性存储装置的方法。 该方法包括向具有存储用于设置非易失性存储器件的操作环境的初始设置数据的存储单元阵列的非易失性存储器件提供电力。 对存储单元阵列进行初始读取操作。 使用通过初始读取操作读取的初始设置数据来设置非易失性存储器件的操作环境。 存储在存储单元阵列中的初始设置数据包括具有关于要设置的操作环境的信息的主数据和与用于指示主数据的开始和结束的主数据相对应的指示符。