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1.发明申请公开(公告)号：US20120261038A1
公开(公告)日：2012-10-18
申请号：US13448770
申请日：2012-04-17
申请人： Satoru OHSAKI , Kazuhiro MIKI , Tsukasa AZUMA , Koji KAJIKAWA , Shigeru SUZUKI , Masayuki YAMADA , Itaru MURAKAMI , Kenichi OKUNO , Liang YAN , Reki TAKAKU , Akihiro TANIGUCHI , Tetsuya YAMANAKA , Makoto TAKAHASHI , Kenichi IMAI , Osamu WATANABE , Joji KANEKO
发明人： Satoru OHSAKI , Kazuhiro MIKI , Tsukasa AZUMA , Koji KAJIKAWA , Shigeru SUZUKI , Masayuki YAMADA , Itaru MURAKAMI , Kenichi OKUNO , Liang YAN , Reki TAKAKU , Akihiro TANIGUCHI , Tetsuya YAMANAKA , Makoto TAKAHASHI , Kenichi IMAI , Osamu WATANABE , Joji KANEKO
摘要： A low alloy steel ingot contains from 0.15 to 0.30% of C, from 0.03 to 0.2% of Si, from 0.5 to 2.0% of Mn, from 0.1 to 1.3% of Ni, from 1.5 to 3.5% of Cr, from 0.1 to 1.0% of Mo, and more than 0.15 to 0.35% of V, and optionally Ni, with a balance being Fe and unavoidable impurities. Performing quality heat treatment including a quenching step and a tempering step to the low alloy steel ingot to obtain a material, which has a grain size number of from 3 to 7 and is free from pro-eutectoid ferrite in a metallographic structure thereof, and which has a tensile strength of from 760 to 860 MPa and a fracture appearance transition temperature of not higher than 40 ° C.
摘要翻译： 低合金钢锭含有0.15〜0.30％的C，0.03〜0.2％的Si，0.5〜2.0％的Mn，0.1〜1.3％的Ni，1.5〜3.5％的Cr，0.1〜1.0 的Mo，以及大于0.15至0.35％的V，以及任选的Ni，余量为Fe和不可避免的杂质。 对低合金钢锭进行包括淬火步骤和回火步骤的质量热处理，以获得其金相组织中晶粒数为3至7并且不含共析铁素体的材料，并且其中 拉伸强度为760〜860MPa，断裂外观转变温度为40℃以下。
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公开(公告)号：US20090058781A1
公开(公告)日：2009-03-05
申请号：US12125202
申请日：2008-05-22
申请人： Yubo XU , Bongyeol RYU , Ke LIANG , Liang YAN
发明人： Yubo XU , Bongyeol RYU , Ke LIANG , Liang YAN
IPC分类号： G09G3/36
CPC分类号： G09G3/3677 , G09G2300/0408 , G11C19/28
摘要： The invention relates to a gate driving device for Thin Film Transistor liquid crystal display comprising: a plurality of shift registers directly deposited on an array substrate, said shift registers being composed of effect transistors and a capacitor, obtaining a gate driving signal voltage by controlling an input signal. Said shift register can be realized by 5-layer mask process or 4-layer mask process, by arranging the field effect transistors on the margin part outside the active region on the substrate or at the edge of the substrate, and then directly depositing them on an array substrate. The invention obtains a gate driving signal voltage by the shift registers directly deposited on the substrate, thus overcoming the shortage of the need of driving chips and film layers in the prior art, substantially reducing the production cost for LCD.
摘要翻译： 本发明涉及一种用于薄膜晶体管液晶显示器的栅极驱动装置，包括：直接沉积在阵列基板上的多个移位寄存器，所述移位寄存器由效应晶体管和电容器组成，通过控制栅极驱动信号电压获得栅极驱动信号电压 输入信号。 所述移位寄存器可以通过5层掩模处理或4层掩模处理来实现，通过将场效应晶体管布置在衬底上或基板边缘的有源区域之外的边界部分上，然后将它们直接放置在 阵列基板。 本发明通过直接沉积在衬底上的移位寄存器获得栅极驱动信号电压，从而克服了现有技术中驱动芯片和膜层的需求的不足，从而大大降低了LCD的生产成本。
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