公开(公告)号：US20120261038A1

公开(公告)日：2012-10-18

申请号：US13448770

申请日：2012-04-17

申请人： Satoru OHSAKI ,  Kazuhiro MIKI ,  Tsukasa AZUMA ,  Koji KAJIKAWA ,  Shigeru SUZUKI ,  Masayuki YAMADA ,  Itaru MURAKAMI ,  Kenichi OKUNO ,  Liang YAN ,  Reki TAKAKU ,  Akihiro TANIGUCHI ,  Tetsuya YAMANAKA ,  Makoto TAKAHASHI ,  Kenichi IMAI ,  Osamu WATANABE ,  Joji KANEKO

发明人： Satoru OHSAKI ,  Kazuhiro MIKI ,  Tsukasa AZUMA ,  Koji KAJIKAWA ,  Shigeru SUZUKI ,  Masayuki YAMADA ,  Itaru MURAKAMI ,  Kenichi OKUNO ,  Liang YAN ,  Reki TAKAKU ,  Akihiro TANIGUCHI ,  Tetsuya YAMANAKA ,  Makoto TAKAHASHI ,  Kenichi IMAI ,  Osamu WATANABE ,  Joji KANEKO

IPC分类号： C21D6/00 ,  C22C38/46

CPC分类号： C22C38/58 ,  C21D1/25 ,  C21D1/28 ,  C21D7/13 ,  C22C38/44 ,  C22C38/46

摘要： A low alloy steel ingot contains from 0.15 to 0.30% of C, from 0.03 to 0.2% of Si, from 0.5 to 2.0% of Mn, from 0.1 to 1.3% of Ni, from 1.5 to 3.5% of Cr, from 0.1 to 1.0% of Mo, and more than 0.15 to 0.35% of V, and optionally Ni, with a balance being Fe and unavoidable impurities. Performing quality heat treatment including a quenching step and a tempering step to the low alloy steel ingot to obtain a material, which has a grain size number of from 3 to 7 and is free from pro-eutectoid ferrite in a metallographic structure thereof, and which has a tensile strength of from 760 to 860 MPa and a fracture appearance transition temperature of not higher than 40 ° C.

摘要翻译： 低合金钢锭含有0.15〜0.30％的C，0.03〜0.2％的Si，0.5〜2.0％的Mn，0.1〜1.3％的Ni，1.5〜3.5％的Cr，0.1〜1.0 的Mo，以及大于0.15至0.35％的V，以及任选的Ni，余量为Fe和不可避免的杂质。 对低合金钢锭进行包括淬火步骤和回火步骤的质量热处理，以获得其金相组织中晶粒数为3至7并且不含共析铁素体的材料，并且其中 拉伸强度为760〜860MPa，断裂外观转变温度为40℃以下。

公开(公告)号：US20080213099A1

公开(公告)日：2008-09-04

申请号：US11836900

申请日：2007-08-10

申请人： Shinya IMANO ,  Hirotsugu KAWANAKA ,  Hiroyuki DOI ,  Tatsuya TAKAHASHI ,  Tsukasa AZUMA ,  Koji KAJIKAWA

发明人： Shinya IMANO ,  Hirotsugu KAWANAKA ,  Hiroyuki DOI ,  Tatsuya TAKAHASHI ,  Tsukasa AZUMA ,  Koji KAJIKAWA

IPC分类号： F01D5/14 ,  C22C19/05 ,  C22F1/10

CPC分类号： C22C19/05 ,  C22F1/10

摘要： An Ni—Fe based superalloy forging material including 30 to 40 wt % of Fe, 14 to 16 wt % of Cr, 1.2 to 1.7 wt % of Ti, 1.1 to 1.5 wt % of Al, 1.9 to 2.7 wt % of Nb, 0.05 wt % or less of C and the remainder of Ni and inevitable impurities is solution-treated and aged, and thereby γ′ phase (Ni3Al) having an initial mean particle size of about 50 to about 100 nm is precipitated. This superalloy is excellent in high-temperature strength and high-temperature ductility and can produce a large forged product of 10 ton or more. Therefore, this material is suitable for use as the material of a steam turbine rotor having a main steam temperature of 650° C. or more.

摘要翻译： 包含Fe：30〜40wt％，Cr：14〜16wt％，Ti：1.2〜1.7wt％，Al：1.1〜1.5wt％，Nb：1.9〜2.7wt％，Ni： 重量％或更少的C，其余的Ni和不可避免的杂质进行溶液处理和老化，从而具有初始平均粒度为约50至约100的γ'相（Ni 3 Al 3 Al） nm沉淀。 该超合金具有优异的高温强度和高温延展性，可生产10吨以上的大型锻造产品。 因此，该材料适用于主蒸汽温度为650℃以上的汽轮机转子的材料。

公开(公告)号：US20130078570A1

公开(公告)日：2013-03-28

申请号：US13626415

申请日：2012-09-25

申请人： Atsushi HIENO ,  Shigeki HATTORI ,  Hiroko NAKAMURA ,  Satoshi MIKOSHIBA ,  Koji ASAKAWA ,  Masahiro KANNO ,  Yuriko SEINO ,  Tsukasa AZUMA

发明人： Atsushi HIENO ,  Shigeki HATTORI ,  Hiroko NAKAMURA ,  Satoshi MIKOSHIBA ,  Koji ASAKAWA ,  Masahiro KANNO ,  Yuriko SEINO ,  Tsukasa AZUMA

IPC分类号： G03F7/20 ,  G03F7/004 ,  B32B7/04 ,  B82Y30/00

CPC分类号： G03F7/40 ,  B32B7/04 ,  B32B2307/40 ,  B82Y30/00 ,  G03F7/0002 ,  G03F7/004 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/165 ,  G03F7/20

摘要： According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.

公开(公告)号：US20120220136A1

公开(公告)日：2012-08-30

申请号：US13368196

申请日：2012-02-07

申请人： Tsukasa AZUMA

发明人： Tsukasa AZUMA

IPC分类号： H01L21/31 ,  G06F17/50

CPC分类号： H01L21/0337

摘要： According to one embodiment, a pattern data generating apparatus comprises a storage unit that stores a table defining direct self assembly information that combines a direct self assembly material, a film thickness of the direct self assembly material, and a process condition for the direct self assembly material according to a pattern dimension, a division unit that divides layout data of a device based on the pattern dimension to generate divided layouts, an extraction unit that extracts the direct self assembly information corresponding to the pattern dimension of the divided layout from the table, and a generation unit that generates pattern data by allocating the direct self assembly information extracted by the extraction unit to the divided layouts.

摘要翻译： 根据一个实施例，图案数据生成装置包括存储单元，该存储单元存储表示直接自组装信息的直接自组装信息，直接自组装材料的膜厚度，直接自组装材料的膜厚度和用于直接自组装的工艺条件 根据图案尺寸的材料，分割单元，其基于所述图案尺寸分割设备的布局数据以生成分割布局;提取单元，从所述表提取与所划分的布局的图案维度相对应的直接自组装信息， 以及生成单元，其通过将由提取单元提取的直接自组装信息分配给分割的布局来生成图案数据。

公开(公告)号：US20080318166A1

公开(公告)日：2008-12-25

申请号：US12143187

申请日：2008-06-20

申请人： Tsukasa AZUMA

发明人： Tsukasa AZUMA

IPC分类号： H01L21/02

CPC分类号： G03F7/2041 ,  G03F7/38 ,  G03F7/70341

摘要： An object of the present invention is to provide a method of manufacturing semiconductor device, in which a water repellent layer on a resist film surface is removed to improve pattern-size controllability in a developing process. The pattern controllability of a resist pattern is improved by forming the resist pattern in such a manner that a resist film is formed on a surface of a semiconductor substrate, by using an exposure system, a liquid is filled between the resist film and a projection optical system to expose the resist film through the liquid, a water repellent layer formed on a surface of the resist film is removed after exposure, the substrate is thermally-processed after the water repellent layer is remove, and the resist film is developed.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，其中除去抗蚀剂膜表面上的防水层以改善显影过程中的图案尺寸可控性。 通过在半导体衬底的表面上形成抗蚀剂图案，通过使用曝光系统，在抗蚀剂膜和投影光学元件之间填充液体来形成抗蚀剂图案，可以改善抗蚀剂图案的图案可控性 系统通过液体曝光抗蚀剂膜，在曝光后除去形成在抗蚀剂膜表面上的防水层，在去除斥水层之后对基材进行热处理，并且抗蚀剂膜显影。

公开(公告)号：US20130078817A1

公开(公告)日：2013-03-28

申请号：US13414754

申请日：2012-03-08

申请人： Tsukasa AZUMA

发明人： Tsukasa AZUMA

IPC分类号： H01L21/302 ,  B29C33/38

CPC分类号： B29C33/3842 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/67092

摘要： According to an embodiment, a method of forming a film is provided. In the method of forming a film, a reversed pattern which is the reverse of a desired layout pattern is formed on a first substrate. Subsequently, a pattern material of the desired layout pattern is supplied to a second substrate as a reversal material. Thereafter, the reversed pattern is brought into contact with the reversal material such that the reversed pattern faces the reversal material, so that the reversed pattern is filled with the reversal material by a capillary phenomenon.

摘要翻译： 根据实施例，提供了一种形成膜的方法。 在形成膜的方法中，在第一基板上形成与期望的布局图案相反的反转图案。 随后，将所需布局图案的图案材料作为反转材料提供给第二基板。 此后，使反转图案与反转材料接触，使得反转图案面向反转材料，使得反转图案通过毛细管现象被反转材料填充。

公开(公告)号：US20120009799A1

公开(公告)日：2012-01-12

申请号：US13150961

申请日：2011-06-01

申请人： Tsukasa AZUMA ,  Tatsuhiko Higashiki ,  Kyoichi Suguro

发明人： Tsukasa AZUMA ,  Tatsuhiko Higashiki ,  Kyoichi Suguro

IPC分类号： H01L21/302 ,  B29C59/02 ,  B01J19/08

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： According to one embodiment, a template manufacturing method is a method for manufacturing a template for use in an imprint processing in which a pattern having irregularities are formed on a principal surface, and the pattern is brought into contact with a resist member formed on a substrate to be processed, to transfer the pattern to the resist member, the method including implanting charged particles at least into the bottoms of concave portions of the template.

摘要翻译： 根据一个实施例，模板制造方法是用于制造在压印处理中使用的模板的方法，其中在主表面上形成具有凹凸的图案，并且图案与形成在基板上的抗蚀剂部件接触 要被处理以将图案转印到抗蚀剂构件上，该方法包括将带电粒子至少注入到模板的凹部的底部中。