公开(公告)号：US6009890A

公开(公告)日：2000-01-04

申请号：US7753

申请日：1998-01-15

申请人： Satoshi Kaneko ,  Yuji Kamikawa ,  Akira Koguchi ,  Osamu Kuroda ,  Shigenori Kitahara ,  Tatsuya Nishida

发明人： Satoshi Kaneko ,  Yuji Kamikawa ,  Akira Koguchi ,  Osamu Kuroda ,  Shigenori Kitahara ,  Tatsuya Nishida

IPC分类号： H01L21/00 ,  H01L21/677 ,  B08B3/04

CPC分类号： H01L21/67769 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67757 ,  H01L21/67775 ,  H01L21/67778 ,  Y10S134/902

摘要： A substrate transporting and processing system generally comprises: a supply section of a carrier 1 for housing therein wafers W to be processed, in a horizontal state; a discharge section of the carrier 1; a wafer unloading arm 14 for unloading the wafers W from said carrier 1; a wafer loading arm 16 for loading the wafers W into the carrier 1; an attitude changing unit 40 for changing the attitude of the wafers W between a horizontal state and a vertical state; a processing section 3 for suitably processing the wafers W; and a wafer transport arm 56 for delivering the wafers W between the attitude changing unit 40 and the processing section 3 and for transporting the wafers W into and from the processing section. Thus, after the wafers W housed in the carrier 1 in the horizontal state are unloaded and the attitude of the wafers W is changed into the vertical state, suitable processes are carried out, and the attitude of the wafers W is changed in the horizontal state after processing, so that the wafers W can be housed in the carrier 1. Thus, it is possible to decrease the size of the whole system to improve the throughput and to improve the yield of products.

摘要翻译： 基板输送和处理系统通常包括：载体1的供应部分，用于在水平状态下容纳待处理的晶片W; 载体1的放电部分; 用于从所述载体1卸载晶片W的晶片卸载臂14; 用于将晶片W装载到载体1中的晶片装载臂16; 姿态改变单元40，用于在水平状态和垂直状态之间改变晶片W的姿态; 用于适当地处理晶片W的处理部分3; 以及晶片传送臂56，用于在姿态改变单元40和处理部分3之间传送晶片W，并将晶片W输送到处理部分和从处理部分传送。 因此，在水平状态下容纳在载体1中的晶片W被卸载并且晶片W的姿态变为垂直状态之后，进行合适的处理，并且晶片W的姿态在水平状态下变化 在处理之后，可以将晶片W容纳在载体1中。因此，可以减小整个系统的尺寸以提高生产量并提高产品的产量。

公开(公告)号：US6158447A

公开(公告)日：2000-12-12

申请号：US149852

申请日：1998-09-08

申请人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara ,  Miyako Yamasaka

发明人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara ,  Miyako Yamasaka

IPC分类号： B08B3/08 ,  H01L21/00 ,  H01L21/306 ,  H01L21/66 ,  B08B3/02

CPC分类号： H01L21/02052 ,  B08B3/08 ,  B24B37/013 ,  H01L21/67057 ,  H01L22/26 ,  Y10S134/902

摘要： A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.

公开(公告)号：US20090078287A1

公开(公告)日：2009-03-26

申请号：US12232458

申请日：2008-09-17

申请人： Yuji Kamikawa ,  Shigenori Kitahara

发明人： Yuji Kamikawa ,  Shigenori Kitahara

IPC分类号： B08B3/08 ,  B08B13/00

CPC分类号： H01L21/67023 ,  B08B3/00 ,  G01N27/10

摘要： A liquid processing apparatus includes: a processing part 80 configured to process an object to be processed by a process liquid; a supply path 1 connected to the processing part 80, the supply path 1 being configured to guide the process liquid to the processing part 80; a solvent supply part 7 configured to supply a solvent to the supply path 1; and a chemical-liquid supply part 5 configured to supply a chemical liquid to the supply path 1 through a chemical-liquid supply path so as to generate a chemical liquid diluted with the solvent. A measuring part 10, which is configured to measure a conductivity of the chemical liquid diluted with the solvent, is disposed in the supply path at a position downstream a connection points 25a, 35a, 45a, to which the chemical-liquid supply path 6 is connected. An additional chemical-liquid supply part 1, which is configured to supply an additional chemical liquid different from the chemical liquid through an additional chemical-liquid supply path 3, is connected to the supply path at a position downstream a measuring point 10a on which the measuring part 10 is disposed.

摘要翻译： 一种液体处理设备，包括：处理部分80，被配置为处理由处理液体处理的物体; 连接到处理部80的供给路径1，供给路径1构成为将处理液引导到处理部80; 配置成向供给路径1供给溶剂的溶剂供给部7; 以及药液供给部5，其经由药液供给路径向供给路径1供给化学液，以生成用溶剂稀释的药液。 被配置为测量用溶剂稀释的化学液体的电导率的测量部件10设置在供给路径中，在药液供给路径6所在的连接点25a，35a，45a的下游位置 连接的。 配置为通过附加的药液供给路径3供给与药液不同的附加的药液的附加的药液供给部1在测量点10a的下游的位置与供给路径连接， 设置测量部10。

公开(公告)号：US06592678B1

公开(公告)日：2003-07-15

申请号：US09689408

申请日：2000-10-12

申请人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara ,  Miyako Yamasaka

发明人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara ,  Miyako Yamasaka

IPC分类号： B08B304

CPC分类号： H01L21/02052 ,  B08B3/08 ,  B24B37/013 ,  H01L21/67057 ,  H01L22/26 ,  Y10S134/902

摘要： A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.

摘要翻译： 清洁设备通常包括：清洗槽3​​0，用于在其中存储清洁溶液以允许将半导体晶片W浸入清洁溶液中以清洁晶片W的表面; 用于将清洗槽30连接到纯水供给源31的清洗液供给管33; 用于在其中存储化学品的化学品储存容器34; 用于经由注入截止阀35将清洗液供给管33与药剂收容容器34连接的化学品供给管36; 以及用于将预定量的化学品从化学物质储存容器34注入到通过清洁溶液供应管33的纯水的隔膜泵37.清洗槽30中的清洁溶液的温度例如由温度传感器 基于从温度传感器44输出的检测信号，控制由隔膜泵37喷射的化学物质的量，使得化学品的浓度为预定浓度。 因此，可以注入预定量的化学品以便以预定浓度的化学品清洁晶片W.

公开(公告)号：US06394110B2

公开(公告)日：2002-05-28

申请号：US09912964

申请日：2001-07-25

申请人： Yuji Kamikawa ,  Shigenori Kitahara ,  Kinya Ueno

发明人： Yuji Kamikawa ,  Shigenori Kitahara ,  Kinya Ueno

IPC分类号： B08B704

CPC分类号： H01L21/67028 ,  Y10S134/902

摘要： A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2). A pure water supply system (11) including pure water supply port and a draining unit (12) including a drain pipe-line (141) through which pure water is drained are combined with the second processing chamber (4).

摘要翻译： 用于处理晶片（W）的衬底处理设备（1）具有能够容纳晶片（W）的第一处理室（2）和能够容纳晶片（W）的第二处理室（4）。 第二处理室（4）形成在第一处理室（2）下方和附近，并且能够与第一处理室（2）连通。 晶片引导件（6）在第一和第二处理室（2,4）之间垂直地承载晶片（W）。 打开快门（7）以允许第一和第二处理室（2,4）彼此连通并且关闭以将它们彼此隔离。 包括蒸汽供应口的蒸汽供应系统（8），包括臭氧气体供应口的臭氧气体供应系统（9）和包括IPA供应口的IPA供应系统（10）与第一处理室（2）组合。 包括纯水供应口和排水单元（12）的纯水供应系统（11）和排水管（141），排水管（141）通过排水管排出第二处理室（4）。

公开(公告)号：US06318386B1

公开(公告)日：2001-11-20

申请号：US09546291

申请日：2000-04-10

申请人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara

发明人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara

IPC分类号： B08B1300

CPC分类号： H01L21/67028 ,  B08B3/10 ,  F04B43/04 ,  F04B43/0736 ,  F04B2205/063 ,  Y10S134/902

摘要： A cleaning tank 30 stores a cleaning liquid to clean the surfaces of semiconductor wafers W immersed in the cleaning liquid. A cleaning liquid supply pipe 33 connects the cleaning tank 30 to a pure water supply source 31. A chemical liquid container 34 stores a chemical liquid, and a chemical liquid supply pipe 36 connects the cleaning liquid supply pipe 33 to the chemical liquid container 34 via an infusion open/close switching valve 35, and a chemical liquid feed means is interposed in the chemical liquid supply pipe 36. The chemical liquid feed means is a reciprocal pump, such as diaphragm pump 37. Thus, a predetermined quantity of the chemical liquid can be infused into pure water or to a drying gas generator to ensure that the chemical liquid of a predetermined concentration be available for washing or drying treatment, regardless of fluctuations in flow amount or pressure of pure water or a drying gas carrier gas.

摘要翻译： 清洗槽30储存清洗液体以清洁浸在清洗液中的半导体晶片W的表面。 清洗液供给管33将清洗槽30连接到纯水供给源31.化学液容器34储存药液，药液供给管36将清洗液供给管33与药液容器34连接，经由 输液开闭切换阀35以及化学液体供给装置插入化学液体供给管36中。药液供给装置是隔膜泵37等往复泵。因此，预定量的药液 可以输入纯水或干燥气体发生器，以确保预定浓度的化学液体可用于洗涤或干燥处理，而与纯水或干燥气体载体气体的流量或压力的波动无关。

公开(公告)号：US6029371A

公开(公告)日：2000-02-29

申请号：US156751

申请日：1998-09-16

申请人： Yuji Kamikawa ,  Teruomi Minami ,  Shigenori Kitahara

发明人： Yuji Kamikawa ,  Teruomi Minami ,  Shigenori Kitahara

IPC分类号： F26B3/04 ,  F26B9/06 ,  F26B21/00 ,  F26B21/14 ,  F26B25/00 ,  H01L21/00 ,  F26B3/00

CPC分类号： H01L21/67034

摘要： A drying treatment apparatus for drying cleaned semiconductor wafers comprises drying gas producing means (41) connected to a drying treating unit (30) through a drying gas supplying pipe line (32). A flowrate controlling diaphragm pump (50) is provided in an isopropyl alcohol (IPA) supplying pipe line (32) that connects an IPA tank (48) and the drying gas producing means (41). An N.sub.2 gas supply source (52) is provided for supplying nitrogen gas into the drying gas producing means (41), and a heater (44) is disposed within the drying gas producing means to produce a drying gas. As a result of this, the amount of the IPA supplied to the drying gas producing means (41) by the diaphragm pump (50) is controllable, thus enabling the concentration of the IPA contained in the drying gas to be maintained at a value within a range of from 3% to 80%, inclusive, and enabling the temperature of the drying gas to be maintained at a value within a range of from 80.degree. to 150.degree., inclusive, due to the heating by the heater (44). The above feature enables improvement of the drying efficiency and reduction in the amount of consumption of the drying gas.

摘要翻译： 用于干燥清洁的半导体晶片的干燥处理装置包括通过干燥气体供给管线（32）连接到干燥处理单元（30）的干燥气体生成装置（41）。 在连接IPA罐（48）和干燥气体产生装置（41）的异丙醇（IPA）供应管线（32）中设置有流量控制隔膜泵（50）。 提供一种用于向干燥气体产生装置（41）中供应氮气的N 2气体供应源（52），并且在干燥气体产生装置内设置加热器（44）以产生干燥气体。 作为其结果，通过隔膜泵（50）供给到干燥气体生成装置（41）的IPA的量是可控的，从而能够使包含在干燥气体中的IPA的浓度保持在 3％〜80％的范围，由于加热器（44）的加热，使干燥气体的温度保持在80〜150℃的范围内。 上述特征使得能够提高干燥效率并减少干燥气体的消耗量。

公开(公告)号：US06299696B2

公开(公告)日：2001-10-09

申请号：US09735150

申请日：2000-12-12

申请人： Yuji Kamikawa ,  Shigenori Kitahara ,  Kinya Ueno

发明人： Yuji Kamikawa ,  Shigenori Kitahara ,  Kinya Ueno

IPC分类号： B08B500

CPC分类号： H01L21/67028 ,  Y10S134/902

摘要： A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2). A pure water supply system (11) including pure water supply port and a draining unit (12) including a drain pipe-line (141) through which pure water is drained are combined with the second processing chamber (4).

公开(公告)号：US06082381A

公开(公告)日：2000-07-04

申请号：US156754

申请日：1998-09-16

申请人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara

发明人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara

IPC分类号： H01L21/304 ,  B08B3/10 ,  F04B43/04 ,  F04B43/073 ,  H01L21/00 ,  B08B3/04

CPC分类号： H01L21/67028 ,  B08B3/10 ,  F04B43/04 ,  F04B43/0736 ,  F04B2205/063 ,  Y10S134/902

摘要： A cleaning tank 30 stores a cleaning liquid to clean the surfaces of semiconductor wafers W immersed in the cleaning liquid. A cleaning liquid supply pipe 33 connects the cleaning tank 30 to a pure water supply source 31. A chemical liquid container 34 stores a chemical liquid, and a chemical liquid supply pipe 36 connects the cleaning liquid supply pipe 33 to the chemical liquid container 34 via an infusion open/close switching valve 35, and a chemical liquid feed means is interposed in the chemical liquid supply pipe 36. The chemical liquid feed means is a reciprocal pump, such as diaphragm pump 37. Thus, a predetermined quantity of the chemical liquid can be infused into pure water or to a drying gas generator to ensure that the chemical liquid of a predetermined concentration be available for washing or drying treatment, regardless of fluctuations in flow amount or pressure of pure water or a drying gas carrier gas.

摘要翻译： 清洗槽30储存清洗液体以清洁浸在清洗液中的半导体晶片W的表面。 清洗液供给管33将清洗槽30连接到纯水供给源31.药液容器34储存药液，药液供给管36将清洗液供给管33与药液容器34连接，经由 输液开闭切换阀35以及化学液体供给装置插入化学液体供给管36中。药液供给装置是隔膜泵37等往复泵。因此，预定量的药液 可以输入纯水或干燥气体发生器，以确保预定浓度的化学液体可用于洗涤或干燥处理，而与纯水或干燥气体载体气体的流量或压力的波动无关。

公开(公告)号：US08491726B2

公开(公告)日：2013-07-23

申请号：US12232458

申请日：2008-09-17

申请人： Yuji Kamikawa ,  Shigenori Kitahara

发明人： Yuji Kamikawa ,  Shigenori Kitahara

IPC分类号： B08B3/00

CPC分类号： H01L21/67023 ,  B08B3/00 ,  G01N27/10

摘要： A liquid processing apparatus includes: a processing part 80 configured to process an object to be processed by a process liquid; a supply path 1 connected to the processing part 80, the supply path 1 being configured to guide the process liquid to the processing part 80; a solvent supply part 7 configured to supply a solvent to the supply path 1; and a chemical-liquid supply part 5 configured to supply a chemical liquid to the supply path 1 through a chemical-liquid supply path so as to generate a chemical liquid diluted with the solvent. A measuring part 10, which is configured to measure a conductivity of the chemical liquid diluted with the solvent, is disposed in the supply path at a position downstream from a connection points 25a, 35a, 45a, to which the chemical-liquid supply path 6 is connected. An additional chemical-liquid supply part 1, which is configured to supply an additional chemical liquid different from the chemical liquid through an additional chemical-liquid supply path 3, is connected to the supply path at a position downstream from a measuring point 10a on which the measuring part 10 is disposed.

摘要翻译： 一种液体处理设备，包括：处理部分80，被配置为处理由处理液体处理的物体; 连接到处理部80的供给路径1，供给路径1构成为将处理液引导到处理部80; 配置成向供给路径1供给溶剂的溶剂供给部7; 以及药液供给部5，其经由药液供给路径向供给路径1供给化学液，以生成用溶剂稀释的药液。 被配置为测量用溶剂稀释的化学液体的电导率的测量部件10设置在供应路径中的连接点25a，35a，45a的下游位置，药液供给路径6 已连接。 配置为通过附加的药液供给路径3供给与化学液体不同的附加的药液的附加的药液供给部1在测量点10a的下游的位置与供给路径连接， 设置测量部10。