公开(公告)号：US6009890A

公开(公告)日：2000-01-04

申请号：US7753

申请日：1998-01-15

申请人： Satoshi Kaneko ,  Yuji Kamikawa ,  Akira Koguchi ,  Osamu Kuroda ,  Shigenori Kitahara ,  Tatsuya Nishida

发明人： Satoshi Kaneko ,  Yuji Kamikawa ,  Akira Koguchi ,  Osamu Kuroda ,  Shigenori Kitahara ,  Tatsuya Nishida

IPC分类号： H01L21/00 ,  H01L21/677 ,  B08B3/04

CPC分类号： H01L21/67769 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67757 ,  H01L21/67775 ,  H01L21/67778 ,  Y10S134/902

摘要： A substrate transporting and processing system generally comprises: a supply section of a carrier 1 for housing therein wafers W to be processed, in a horizontal state; a discharge section of the carrier 1; a wafer unloading arm 14 for unloading the wafers W from said carrier 1; a wafer loading arm 16 for loading the wafers W into the carrier 1; an attitude changing unit 40 for changing the attitude of the wafers W between a horizontal state and a vertical state; a processing section 3 for suitably processing the wafers W; and a wafer transport arm 56 for delivering the wafers W between the attitude changing unit 40 and the processing section 3 and for transporting the wafers W into and from the processing section. Thus, after the wafers W housed in the carrier 1 in the horizontal state are unloaded and the attitude of the wafers W is changed into the vertical state, suitable processes are carried out, and the attitude of the wafers W is changed in the horizontal state after processing, so that the wafers W can be housed in the carrier 1. Thus, it is possible to decrease the size of the whole system to improve the throughput and to improve the yield of products.

摘要翻译： 基板输送和处理系统通常包括：载体1的供应部分，用于在水平状态下容纳待处理的晶片W; 载体1的放电部分; 用于从所述载体1卸载晶片W的晶片卸载臂14; 用于将晶片W装载到载体1中的晶片装载臂16; 姿态改变单元40，用于在水平状态和垂直状态之间改变晶片W的姿态; 用于适当地处理晶片W的处理部分3; 以及晶片传送臂56，用于在姿态改变单元40和处理部分3之间传送晶片W，并将晶片W输送到处理部分和从处理部分传送。 因此，在水平状态下容纳在载体1中的晶片W被卸载并且晶片W的姿态变为垂直状态之后，进行合适的处理，并且晶片W的姿态在水平状态下变化 在处理之后，可以将晶片W容纳在载体1中。因此，可以减小整个系统的尺寸以提高生产量并提高产品的产量。

公开(公告)号：US07171973B2

公开(公告)日：2007-02-06

申请号：US10195453

申请日：2002-07-16

申请人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

发明人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

IPC分类号： B08B3/02

CPC分类号： H01L21/67051 ,  C03C23/0075 ,  H01L21/67028 ,  H01L21/67178 ,  Y10S134/901 ,  Y10S134/902

摘要： The substrate processing apparatus has an enclosure structure enclosing a substrate support member to define a processing space. The enclosure structure has an opening closed by a shutter. A processing fluid supply unit, which supplies processing fluid, such as chemical liquid, is accommodated in a housing. The processing fluid supply unit accommodated in the housing is advanced into the processing space through the opening of the enclosure structure to feed the processing fluid onto the substrate supported by the substrate support member.

摘要翻译： 衬底处理设备具有包围衬底支撑构件以限定处理空间的封闭结构。 外壳结构具有由快门关闭的开口。 供给处理流体（如化学液体）的处理流体供应单元容纳在壳体中。 容纳在壳体中的处理流体供应单元通过外壳结构的打开而进入处理空间，以将处理流体供给到由基板支撑构件支撑的基板上。

公开(公告)号：US07862680B2

公开(公告)日：2011-01-04

申请号：US12149829

申请日：2008-05-08

申请人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

发明人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

IPC分类号： H01L21/027 ,  H01L21/304 ,  B08B3/02

CPC分类号： H01L21/6708 ,  B08B3/02

摘要： A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.

摘要翻译： 提供了一种基板处理装置。 该装置包括用于供应不同加工流体的多个流体供应器61,61,63。 在处理晶片W时，基板处理装置沿着晶片W的周边部分相对移动流体供给部61,62,63。 流体供应部61,62,63沿着从晶片W的圆周向内延伸的方向配置。 通过这种布置，尽管晶片W以低速旋转，该装置能够稳定地处理晶片W. 此外，可以提高抗蚀剂处理中的装置的生产量。

公开(公告)号：US20080210278A1

公开(公告)日：2008-09-04

申请号：US12149829

申请日：2008-05-08

申请人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

发明人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

IPC分类号： B08B3/00

CPC分类号： H01L21/6708 ,  B08B3/02

摘要： A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.

公开(公告)号：US07332055B2

公开(公告)日：2008-02-19

申请号：US10209617

申请日：2002-08-01

申请人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

发明人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01L21/6708 ,  B08B3/02

摘要： A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.

摘要翻译： 提供了一种基板处理装置。 该装置包括用于供应不同加工流体的多个流体供应器61,61,63。 在处理晶片W时，基板处理装置沿着晶片W的周边部分相对移动流体供给部61,62,63。 流体供应部61,62,63沿着从晶片W的圆周向内延伸的方向配置。 通过这种布置，尽管晶片W以低速旋转，该装置能够稳定地处理晶片W. 此外，可以提高抗蚀剂处理中的装置的生产量。

公开(公告)号：US20070105380A1

公开(公告)日：2007-05-10

申请号：US11616138

申请日：2006-12-26

申请人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

发明人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

IPC分类号： H01L21/302

CPC分类号： H01L21/67051 ,  C03C23/0075 ,  H01L21/67028 ,  H01L21/67178 ,  Y10S134/901 ,  Y10S134/902

摘要： The substrate processing apparatus has an enclosure structure enclosing a substrate support member to define a processing space. The enclosure structure has an opening closed by a shutter. A processing fluid supply unit, which supplies processing fluid, such as chemical liquid, is accommodated in a housing. The processing fluid supply unit accommodated in the housing is advanced into the processing space through the opening of the enclosure structure to feed the processing fluid onto the substrate supported by the substrate support member.

公开(公告)号：US07543593B2

公开(公告)日：2009-06-09

申请号：US11356364

申请日：2006-02-17

申请人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

发明人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

IPC分类号： C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC分类号： H01L21/6708 ,  B08B3/02

摘要： A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.

摘要翻译： 提供了一种基板处理装置。 该装置包括用于供应不同加工流体的多个流体供应器61,61,63。 在处理晶片W时，基板处理装置沿着晶片W的周边部分相对移动流体供给部61,62,63。 流体供应部61,62,63沿着从晶片W的圆周向内延伸的方向配置。 通过这种布置，尽管晶片W以低速旋转，该装置能够稳定地处理晶片W. 此外，可以提高抗蚀剂处理中的装置的生产量。

公开(公告)号：US20060130968A1

公开(公告)日：2006-06-22

申请号：US11356364

申请日：2006-02-17

申请人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

发明人： Takehiko Orii ,  Tatsuya Nishida ,  Osamu Kuroda

IPC分类号： H01L21/306

CPC分类号： H01L21/6708 ,  B08B3/02

摘要： A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.

公开(公告)号：US08580437B2

公开(公告)日：2013-11-12

申请号：US13359660

申请日：2012-01-27

申请人： Yoshito Ishii ,  Tatsuya Nishida ,  Atsushi Fujita ,  Kazuo Yamada

发明人： Yoshito Ishii ,  Tatsuya Nishida ,  Atsushi Fujita ,  Kazuo Yamada

IPC分类号： H01M4/13

CPC分类号： H01M4/0404 ,  C01B31/04 ,  C01B32/20 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2006/12 ,  C01P2006/14 ,  H01M4/0433 ,  H01M4/133 ,  H01M4/1393 ,  H01M4/583 ,  H01M4/587 ,  H01M4/621 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/058 ,  H01M2004/021 ,  H01M2004/027 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011 ,  Y10T29/49115 ,  Y10T428/2982

摘要： A method for forming a negative electrode for a lithium secondary battery, includes providing a paste comprising graphite particulates comprise assembled or bound graphite particles in each of which a plurality of flat-shaped particles are assembled or bound together so that the planes of orientation are not parallel to one another, and the mixture including 3 to 10 parts by weight of the organic binder per 100 parts by weight of the graphite particulates, a binder and a solvent, coating the paste on a current collector, drying the paste coated on the current collector to form a mixture of the graphite particulates and the binder, and integrating the mixture with the current collector by pressing to provide a density of the mixture of graphite particulates and organic binder of 1.5 to 1.9 g/cm3.

摘要翻译： 一种用于形成锂二次电池负极的方法，包括提供包含石墨颗粒的糊料，其包含组装或结合的石墨颗粒，其中多个扁平形颗粒被组装或结合在一起，使得取向平面不是 彼此平行，并且每100重量份的石墨颗粒，粘合剂和溶剂包含3至10重量份的有机粘合剂，将该糊剂涂布在集电器上，干燥涂覆在电流上的浆料 收集器以形成石墨颗粒和粘合剂的混合物，并通过压制将混合物与集流体整合，以提供1.5至1.9g / cm 3的石墨颗粒和有机粘合剂的混合物的密度。

公开(公告)号：US20100159323A1

公开(公告)日：2010-06-24

申请号：US12719037

申请日：2010-03-08

申请人： Yoshito Ishii ,  Tatsuya Nishida ,  Atsushi Fujita ,  Kazuo Yamada

发明人： Yoshito Ishii ,  Tatsuya Nishida ,  Atsushi Fujita ,  Kazuo Yamada

IPC分类号： H01M4/62

CPC分类号： H01M4/0404 ,  C01B31/04 ,  C01B32/20 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2006/12 ,  C01P2006/14 ,  H01M4/0433 ,  H01M4/133 ,  H01M4/1393 ,  H01M4/583 ,  H01M4/587 ,  H01M4/621 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/058 ,  H01M2004/021 ,  H01M2004/027 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011 ,  Y10T29/49115 ,  Y10T428/2982

摘要： A graphite particle obtained by assembling or binding together a plurality of flat-shaped particles so that the planes of orientation are not parallel to one another, or a graphite particle in which aspect ratio is 5 or less or specific surface area is 8 m2/g or less or the size of crystallite in the direction of c-axis of the crystal is 500 Å or more and the size of crystallite in the direction of plane is 1,000 Å or less as measured by X ray broad angle diffraction, or a graphite particle in which pore volume of the pores having a size falling in a range of 102 to 106 Å is 0.4 to 2.0 cc/g per weight of graphite particle or pore volume of the pores having a size falling in a range of 1×102 to 2×104 Å is 0.08 to 0.4 cc/g per weight of graphite particle is suitable for production of negative electrode of lithium secondary battery, and a lithium secondary battery obtained therefrom is excellent in rapid charge-discharge characteristics, cycle characteristics, etc.

摘要翻译： 通过将多个平面状的颗粒组装或结合在一起，使得取向平面彼此不平行，或长宽比为5以下的石墨颗粒或比表面积为8m 2 / g的石墨颗粒 或者晶体的c轴方向的微晶尺寸为500以上，并且通过X射线宽角衍射测定的平面方向的微晶尺寸为1000以下，或石墨粒子 其中尺寸在102至106范围内的孔的孔体积为每重量石墨颗粒0.4至2.0cc / g或具有在1×102至2范围内的尺寸的孔的孔体积 ×104Å为0.08〜0.4cc / g，重量的石墨颗粒适用于生产锂二次电池的负极，由此得到的锂二次电池的快速充放电特性，循环特性等优异。