公开(公告)号：US20090179781A1

公开(公告)日：2009-07-16

申请号：US12248557

申请日：2008-10-09

申请人： Satoshi SAKAI ,  Yoshiaki Fujimoto ,  Motoshi Shibuya ,  Akihisa Kozakura

发明人： Satoshi SAKAI ,  Yoshiaki Fujimoto ,  Motoshi Shibuya ,  Akihisa Kozakura

IPC分类号： H03K17/94 ,  G06F17/20

CPC分类号： G06F3/0238 ,  G06F3/0224 ,  H04N1/00384 ,  H04N1/00413 ,  H04N1/00416 ,  H04N1/00498

摘要： A sheet or overlay has plasticity and covers a keyboard including a plurality of keys, provided with a standard key indication based on a given language environment. The sheet has regions facing the keys on the keyboard, and an optional key indication based on a language environment different from the given language environment is provided in the regions so as to be visible by an operator when the sheet covers the keyboard. If the operator's use language is different from a language of the standard key indication on the keyboard, the keyboard is covered by the sheet supporting the operator's use language. In this way, an electronic apparatus coupled to the keyboard is set to support the language environment of the operator.

摘要翻译： 片材或覆盖物具有可塑性并且覆盖包括多个键的键盘，其被提供有基于给定语言环境的标准键指示。 纸张具有面向键盘上的键的区域，并且在该区域中提供了基于与给定语言环境不同的语言环境的可选键指示，以便当纸张覆盖键盘时由操作者可见。 如果操作者的使用语言与键盘上的标准键指示的语言不同，则键盘由支持操作者使用语言的纸张覆盖。 以这种方式，耦合到键盘的电子设备被设置为支持操作者的语言环境。

公开(公告)号：US20110032254A1

公开(公告)日：2011-02-10

申请号：US12538369

申请日：2009-08-10

申请人： Yukio KATANO ,  Satoshi SAKAI

发明人： Yukio KATANO ,  Satoshi SAKAI

IPC分类号： G06T17/00

CPC分类号： G06T19/00 ,  G06F17/5009 ,  G06F2217/42 ,  G06T17/10

摘要： A sheet metal model creation device (1) for creating a sheet metal model while displaying a three-view drawing includes: a three-view drawing reader (13) configured to read three-view drawing information and display the three-view drawing on a screen; a three-view drawing display controller (15); a three-dimensional face creator (17) configured to create a three-dimensional face associated with an element of the three-view drawing selected on the screen in response to an operation of a mouse; and a model display controller (19) configured to combine the three-dimensional face with the sheet metal model and display the model. Here, the operation of the mouse is movement of a mouse (7), and selection of the element of the three-view drawing on the screen is selection of an element within a region that is based on a position of a mouse pointer associated with the movement of the mouse (7).

摘要翻译： 一种用于在显示三视图的同时创建钣金模型的钣金模型创建装置（1）包括：三维绘图读取器（13），其被配置为读取三视图绘制信息，并且在三维视图中显示三视图 屏幕; 三视图绘图显示控制器（15）; 三维脸部创建器（17），被配置为响应于鼠标的操作而创建与屏幕上选择的三视图的元素相关联的三维面部; 以及模型显示控制器（19），其被配置为将所述三维面与所述金属板模型组合并显示所述模型。 这里，鼠标的操作是鼠标的移动（7），并且在屏幕上选择三视图的元素是基于与鼠标相关联的鼠标指针的位置的区域内的元素的选择 鼠标的移动（7）。

公开(公告)号：US20070158600A1

公开(公告)日：2007-07-12

申请号：US11682794

申请日：2007-03-06

申请人： Satoshi SAKAI ,  Shigenori Tsuruga ,  Hideo Yamakoshi ,  Shizuma Kuribayashi ,  Minoru Danno ,  Hiroshi Futami ,  Noriko Yamazaki

发明人： Satoshi SAKAI ,  Shigenori Tsuruga ,  Hideo Yamakoshi ,  Shizuma Kuribayashi ,  Minoru Danno ,  Hiroshi Futami ,  Noriko Yamazaki

IPC分类号： G01J3/10

CPC分类号： G02B27/0006 ,  B08B7/0035 ,  B08B17/00 ,  G02B1/14

摘要： The objectives of the present invention are to prevent or inhibit the deterioration of optical systems that determine the longevity of an optical apparatus which delivers effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH.ions, ozone, O2.ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals. More specifically, the method according to this invention is characterized by the step of supplying active energy while supplying a flow of gases containing oxygen atoms such as water gas or oxidizing gas (for example, water vapor, oxygen, hydrogen peroxide, ozone or mixtures of said gases with inactive gases (including air)) into the near vacuum zone, thereby removing or reducing the accumulated carbon which deposits on the lighting surface by exciting the oxidation reaction of the accumulated carbon with the supplied active energy.

摘要翻译： 本发明的目的是防止或抑制光学系统的劣化，这些光学系统确定了传递诸如光透射，衍射，反射，光谱产生和干扰的效果的光学装置的寿命，以及这些组合。 ，减少窗户更换等维护操作的频率，降低这种操作的成本。 本发明的特征在于产生具有活性能量的近真空区以激发碳的氧化反应的步骤，其中近真空区面向光学系统的照明表面; 在近真空区产生负离子或自由基，例如含有氧原子的不稳定的化学种子，例如OH自由基，OH，OH，OH，O，O， 以及通过使沉积的碳与负离子或自由基反应来除去或减少沉积在照明表面上的积累的碳。 更具体地说，根据本发明的方法的特征在于，在供给含有氧原子的气体流（例如水气或氧化气体（例如水蒸气，氧气，过氧化氢，臭氧或混合气体 所述具有惰性气体（包括空气）的气体）进入近真空区域，从而通过激发累积的碳与所提供的活性能的氧化反应去除或减少沉积在照明表面上的积聚的碳。

公开(公告)号：US20100227446A1

公开(公告)日：2010-09-09

申请号：US12784876

申请日：2010-05-21

申请人： Satoshi SAKAI ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

发明人： Satoshi SAKAI ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

IPC分类号： H01L21/8234

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878

摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

摘要翻译： 在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9） 在半导体衬底（1）上形成高介电常数绝缘膜（10）。 因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数 在半导体衬底（1）上形成恒定绝缘膜（10）。

公开(公告)号：US20080105923A1

公开(公告)日：2008-05-08

申请号：US11963846

申请日：2007-12-23

申请人： Satoshi SAKAI ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

发明人： Satoshi SAKAI ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

IPC分类号： H01L27/088

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878

摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

摘要翻译： 在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9） 在半导体衬底（1）上形成高介电常数绝缘膜（10）。 因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数 在半导体衬底（1）上形成恒定绝缘膜（10）。

公开(公告)号：US20120203496A1

公开(公告)日：2012-08-09

申请号：US13362296

申请日：2012-01-31

申请人： Satoshi SAKAI

发明人： Satoshi SAKAI

IPC分类号： G06F19/00 ,  G01C22/00

CPC分类号： G01C22/006

摘要： An acceleration detecting device operable in a power-saving mode, including an acceleration detecting section for detecting acceleration in a first direction and a second direction independent from the first direction. The device includes a sampling period reducing section for reducing a sampling period used for detecting the acceleration in the first direction when the magnitude of the acceleration in the first direction exceeds a predetermined value.

摘要翻译： 一种以省电模式工作的加速度检测装置，包括用于检测与第一方向无关的第一方向和第二方向的加速度的加速度检测部。 该装置包括采样周期减少部分，用于当第一方向上的加速度的大小超过预定值时减小用于检测第一方向上的加速度的采样周期。

公开(公告)号：US20100033735A1

公开(公告)日：2010-02-11

申请号：US12517122

申请日：2007-10-31

申请人： Satoshi SAKAI ,  Masami IIDA ,  Kohei KAWAZOE

发明人： Satoshi SAKAI ,  Masami IIDA ,  Kohei KAWAZOE

IPC分类号： G01B11/06

CPC分类号： G01B11/0633 ,  G01B11/0683 ,  G01B11/303

摘要： An object is to reduce film thickness measurement error. Illumination light having different wavelengths is radiated onto a plurality of samples in which thin films having different film qualities and film thicknesses are provided on substrates, evaluation values related to the amounts of transmitted light when the illumination light of each wavelength is radiated are measured, film thickness characteristics, showing the relationship between the evaluation values and the film thicknesses for each film quality, are formed at each wavelength based on the measurement results, and among the film thickness characteristics, a wavelength at which a measurement difference between the evaluation values caused by the film qualities is in a predetermined range is selected.

摘要翻译： 目的是减少膜厚测量误差。 将具有不同波长的照明光照射到多个样品上，其中测量具有不同膜质量和薄膜厚度的薄膜，在辐射每个波长的照明光时与透射光量相关的评估值，膜 基于测量结果，在每个波长处形成表现出每个膜质量的评估值和膜厚度之间的关系的厚度特性，以及膜厚特性之间的测量差异由波长 选择膜质量在预定范围内。

公开(公告)号：US20090273037A1

公开(公告)日：2009-11-05

申请号：US12486944

申请日：2009-06-18

申请人： Satoshi SAKAI ,  Atsushi HIRAIWA ,  Satoshi YAMAMOTO

发明人： Satoshi SAKAI ,  Atsushi HIRAIWA ,  Satoshi YAMAMOTO

IPC分类号： H01L27/088

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878

摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

摘要翻译： 在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9） 在半导体衬底（1）上形成高介电常数绝缘膜（10）。 因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数 在半导体衬底（1）上形成恒定绝缘膜（10）。