摘要:
Magnetoresistive and spin valve heads have a layered structure. Common to each of the layered structures of these heads is the combination of a soft-magnetic layer of essentially NiFe near a spacer layer of essentially Ta, which is used for insuring (111) crystal orientation of the NiFe layer. An isolate layer is interposed between the spacer layer and the soft-magnetic layer to prevent a diffusion boundary from being created at the interface of these layers which tends to degrade the soft-magnetic property of the NiFe layer, especially when the thickness of the soft-magnetic layer is 10 and nm or less. The isolate layer is one of a composition in which the principal component is a magnetic element that is not solid soluble with Ta, a composition in which the principal component is a non-magnetic element that is not solid soluble with Ni and Fe, a composition in which the principal component is at least one of the elements of Co, Fe, Ti, V, Zr, Nb, Mo, Hf, W, Tc, Ru, Rh, Pd, Ag, Re, Os, Ir, Pt and Au; or a composition in which the principal component is of Co.sub.(100-x) Fe.sub.(x), where 20.gtoreq.X>O. The isolate layer has a structure that is amorphous, an fcc structure.
摘要:
Magnetoresistive and spin valve heads have a layered structure. Common to each of the layered structures of these heads is the combination of a soft-magnetic layer of essentially NiFe near a spacer layer of essentially Ta, which is used for insuring (111) crystal orientation of the NiFe layer. An isolate layer is interposed between the spacer layer and the soft-magnetic layer to prevent a diffusion boundary from being created at the interface of these layers which tends to degrade the soft-magnetic property of the NiFe layer, especially when the thickness of the soft-magnetic layer is 10 and nm or less. The isolate layer is one of a composition in which the principal component is a magnetic element that is not solid soluble with Ta, a composition in which the principal component is a non-magnetic element that is not solid soluble with Ni and Fe, a composition in which the principal component is at least one of the elements of Co, Fe, Ti, V, Zr, Nb, Mo, Hf, W, Tc, Ru, Rh, Pd, Ag, Re, Os, Ir, Pt and Au; or a composition in which the principal component is of Co(100−X)Fe(X), where 20≧X>O. The isolate layer has a structure that is amorphous, an fcc structure.
摘要:
A magnetoresistive head comprises a free magnetic layer that has first and second free magnetic films sandwiching a non-magnetic intermediate film therebetween, the respective magnetizing directions of the first and the second free magnetic films are antiparallel. The length of the free magnetic layer in the direction of the track width is 200 nm or less, and a difference between a product of saturation magnetic flux density and a film thickness of the first free magnetic film, and that of the second free magnetic film is within a range from 1 to 3 nmT. By this structure, the variation of output and the variation of asymmetry is greatly decreased at a track width of 200 nm or less.
摘要:
A magnetoresistive head comprises a free magnetic layer that has first and second free magnetic films sandwiching a non-magnetic intermediate film therebetween, the respective magnetizing directions of the first and the second free magnetic films are antiparallel. The length of the free magnetic layer in the direction of the track width is 200 nm or less, and a difference between a product of saturation magnetic flux density and a film thickness of the first free magnetic film, and that of the second free magnetic film is within a range from 1 to 3 nmT. By this structure, the variation of output and the variation of asymmetry is greatly decreased at a track width of 200 nm or less.
摘要:
A magnetoresistive head comprises a free magnetic layer that has first and second free magnetic films sandwiching a non-magnetic intermediate film therebetween, the respective magnetizing directions of the first and the second free magnetic films are antiparallel. The length of the free magnetic layer in the direction of the track width is 200 nm or less, and a difference between a product of saturation magnetic flux density and a film thickness of the first free magnetic film, and that of the second free magnetic film is within a range from 1 to 3 nmT. By this structure, the variation of output and the variation of asymmetry is greatly decreased at a track width of 200 nm or less.
摘要:
A magnetoresistive head comprises a free magnetic layer that has first and second free magnetic films sandwiching a non-magnetic intermediate film therebetween, the respective magnetizing directions of the first and the second free magnetic films are antiparallel. The length of the free magnetic layer in the direction of the track width is 200 nm or less, and a difference between a product of saturation magnetic flux density and a film thickness of the first free magnetic film, and that of the second free magnetic film is within a range from 1 to 3 nmT. By this structure, the variation of output and the variation of asymmetry is greatly decreased at a track width of 200 nm or less.
摘要:
Embodiments of the present invention prevent a pinned layer from suffering magnetization reversal by external stress in a magnetic head of magnetoresistance effect type which has a synthetic ferri-magnetic pinned layer structure with an antiferromagnetic layer of IrMnCr. According to one embodiment, a read element of a magnetoresistive head is made up of a antiferromagnetic layer, a first pinned layer, an antiferromagnetically coupled layer 4, a second pinned layer, and a free layer, which are stacked one over another. The first and second pinned layers and have a composition of Co75Fe25 and Co95Fe5, respectively, and a thickness of 18 Å (3.5 nm·T) and 21 Å (3.9 nm·T), respectively, so as to reduce the difference in anisotropic energy between the first pinned layer in contact with the antiferromagnetic layer and the second pinned layer in contact with the nonmagnetic conductive layer. In this way it is possible to reduce the difference |λ1−λ2| in magnetostriction constant between the first and second pinned layers and below 5.0×10−6. Thus it is possible to protect the pinned layer from external stress and magnetic field which rotate the direction of magnetization.
摘要:
A tunnel magnetoresistance effect magnetic head having between magnetic shield layers, an antiferromagnetic layer, a pinned layer which has the direction of magnetization pinned by exchange coupling with the antiferromagnetic layer, an insulating layer, and a free layer whose direction of magnetization rotates relatively to external magnetic fields, wherein the antiferromagnetic layer is of an antiferromagnetic substance composed mainly of IrMn, the pinned layer is made up of a first pinned layer of CoFe alloy in contact with the antiferromagnetic layer and a second pinned layer of CoFeB alloy which is antiferromagnetically coupled with the first pinned layer, and the first and second pinned layers have the amount of magnetization such that the difference M1−M2 is in the range of 0
摘要:
A magnetoresistive head in which a pinned layer comprises two films, i.e., a ferromagnetic film A and a ferromagnetic B anti-ferromagnetically coupled to each other and a anti-ferromagnetic coupling film for separating the two ferromagnetic films A and B, where the coercivity of the ferromagnetic film alone is 200 (Oe) or more and the coercivity of the ferromagnetic film alone is 20 (Oe) or less. The compositions for the ferromagnetic film A and the ferromagnetic film B, when expressed by Co100-YFeY (at %) are: ferromagnetic film A: 80≧Y≧40, and ferromagnetic film B: 20≧Y≧0, where the material for the film in contact with the ferromagnetic film A is Ru, Ta, NiFeCr, Cu or NiFe.
摘要翻译:磁阻头,其中被钉扎层包括两个膜,即铁磁膜A和反铁磁性地彼此耦合的铁磁体B和用于分离两个铁磁膜A和B的反铁磁耦合膜,其中矫顽力 铁磁膜单独为200(Oe)以上,单独的铁磁膜的矫顽力为20(Oe)以下。 当由Co 100 Al Y Y Y(at%)表示时,铁磁膜A和铁磁膜B的组成为:铁磁膜A:80> = Y > 40,铁磁膜B:20> = Y> = 0,其中与铁磁膜A接触的膜的材料为Ru,Ta,NiFeCr,Cu或NiFe。
摘要:
A data conversion/output device includes a number of sensors, voltage-time conversion circuits that are arranged adjacent to respective sensors and change output levels upon the lapse of times corresponding to output voltage values from the sensors after a conversion operation start point in order to convert for voltage outputs of the sensors into times. The device also includes sensed data generation circuits outputting, as digital data, lapse times until the output levels of the voltage-time conversion circuits change after a conversion start point. The sensed data generation circuits include a counter for counting a clock signal. An operation start of the voltage-time conversion circuits and a start of count operation of the counter are staggered.