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    Lanthanum cobalt oxide semiconductor ceramic and related devices
    1.
    发明授权
    Lanthanum cobalt oxide semiconductor ceramic and related devices 有权
    氧化钴镧半导体陶瓷及相关器件

    公开(公告)号：US06222262B1

    公开(公告)日：2001-04-24

    申请号：US09453994

    申请日：1999-12-03

    申请人： Satoshi Ueno ,  Akinori Nakayama ,  Terunobu Ishikawa ,  Hideaki Niimi ,  Yoichi Kawase

    发明人： Satoshi Ueno ,  Akinori Nakayama ,  Terunobu Ishikawa ,  Hideaki Niimi ,  Yoichi Kawase

    IPC分类号： H01L710

    CPC分类号： H01C7/043

    摘要： A semiconductor ceramic device includes a semiconductor ceramic sintered body and external electrodes. The semiconductor ceramic sintered body contains a lanthanum cobalt type oxide major component, about 0.1 to 10 mol % on an element conversion basis of an oxide of Cr as a sub-component, and about 0.001 to 0.5 mol % on an element conversion basis of at least one of the oxides of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ni, Cu and Zn.

    摘要翻译： 半导体陶瓷器件包括半导体陶瓷烧结体和外部电极。 半导体陶瓷烧结体含有镧钴型氧化物主成分，以作为副成分的Cr的氧化物的元素换算率为约0.1〜10摩尔％，以元素换算为基准的约0.001〜0.5摩尔％ Li，Na，K，Rb，Cs，Be，Mg，Ca，Sr，Ba，Ni，Cu和Zn的氧化物中的至少一种。

    Semiconductive ceramic and semiconductive ceramic element using the same
    2.
    发明授权
    Semiconductive ceramic and semiconductive ceramic element using the same 失效
    半导体陶瓷和半导体陶瓷元件使用相同

    公开(公告)号：US6054403A

    公开(公告)日：2000-04-25

    申请号：US174212

    申请日：1998-10-16

    申请人： Yoichi Kawase ,  Akinori Nakayama ,  Satoshi Ueno ,  Terunobu Ishikawa ,  Hideaki Niimi

    发明人： Yoichi Kawase ,  Akinori Nakayama ,  Satoshi Ueno ,  Terunobu Ishikawa ,  Hideaki Niimi

    IPC分类号： C04B35/00 ,  C04B35/50 ,  H01C7/04 ,  H01B1/08 ,  H01C7/10 ,  H03B5/12

    CPC分类号： C04B35/50 ,  H01C7/043

    摘要： A semiconductive ceramic in which the B constant is maintained at about 4000 K or more at elevated temperature to thereby decrease power consumption, and the B constant is lowered less than 4000 K at low temperature so as to avoid unnecessary increase of resistance; as well as a semiconductive ceramic element using the same. The semiconductive ceramic is formed of a lanthanum cobalt oxide, which serves as the primary component, and, as a secondary component, at least one oxide of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ni, Cu and Zn. The semiconductive ceramic element is fabricated through use of the semiconductive ceramic and an electrode formed thereon.

    摘要翻译： 一种半导体陶瓷，其中B常数在升高的温度下保持在约4000K或更高，从而降低功耗，并且B常数在低温下降低到低于4000K，以避免不必要的电阻增加; 以及使用其的半导体陶瓷元件。 半导体陶瓷由作为主要成分的氧化镧钴氧化物形成，作为二次成分，可以使用Li，Na，K，Rb，Cs，Be，Mg，Ca，Sr，Ba， Ni，Cu和Zn。 半导体陶瓷元件通过使用半导体陶瓷和形成在其上的电极来制造。