Semiconductive ceramic and semiconductive ceramic element using the same
    1.
    发明授权
    Semiconductive ceramic and semiconductive ceramic element using the same 失效
    半导体陶瓷和半导体陶瓷元件使用相同

    公开(公告)号:US6054403A

    公开(公告)日:2000-04-25

    申请号:US174212

    申请日:1998-10-16

    CPC分类号: C04B35/50 H01C7/043

    摘要: A semiconductive ceramic in which the B constant is maintained at about 4000 K or more at elevated temperature to thereby decrease power consumption, and the B constant is lowered less than 4000 K at low temperature so as to avoid unnecessary increase of resistance; as well as a semiconductive ceramic element using the same. The semiconductive ceramic is formed of a lanthanum cobalt oxide, which serves as the primary component, and, as a secondary component, at least one oxide of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ni, Cu and Zn. The semiconductive ceramic element is fabricated through use of the semiconductive ceramic and an electrode formed thereon.

    摘要翻译: 一种半导体陶瓷,其中B常数在升高的温度下保持在约4000K或更高,从而降低功耗,并且B常数在低温下降低到低于4000K,以避免不必要的电阻增加; 以及使用其的半导体陶瓷元件。 半导体陶瓷由作为主要成分的氧化镧钴氧化物形成,作为二次成分,可以使用Li,Na,K,Rb,Cs,Be,Mg,Ca,Sr,Ba, Ni,Cu和Zn。 半导体陶瓷元件通过使用半导体陶瓷和形成在其上的电极来制造。

    Lanthanum cobalt oxide semiconductor ceramic and related devices
    2.
    发明授权
    Lanthanum cobalt oxide semiconductor ceramic and related devices 有权
    氧化钴镧半导体陶瓷及相关器件

    公开(公告)号:US06222262B1

    公开(公告)日:2001-04-24

    申请号:US09453994

    申请日:1999-12-03

    IPC分类号: H01L710

    CPC分类号: H01C7/043

    摘要: A semiconductor ceramic device includes a semiconductor ceramic sintered body and external electrodes. The semiconductor ceramic sintered body contains a lanthanum cobalt type oxide major component, about 0.1 to 10 mol % on an element conversion basis of an oxide of Cr as a sub-component, and about 0.001 to 0.5 mol % on an element conversion basis of at least one of the oxides of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ni, Cu and Zn.

    摘要翻译: 半导体陶瓷器件包括半导体陶瓷烧结体和外部电极。 半导体陶瓷烧结体含有镧钴型氧化物主成分,以作为副成分的Cr的氧化物的元素换算率为约0.1〜10摩尔%,以元素换算为基准的约0.001〜0.5摩尔% Li,Na,K,Rb,Cs,Be,Mg,Ca,Sr,Ba,Ni,Cu和Zn的氧化物中的至少一种。

    Semiconductor ceramic and electronic element fabricated from the same
    3.
    发明授权
    Semiconductor ceramic and electronic element fabricated from the same 有权
    半导体陶瓷和电子元件由其制造

    公开(公告)号:US6153931A

    公开(公告)日:2000-11-28

    申请号:US262573

    申请日:1999-03-04

    CPC分类号: H01C7/025

    摘要: The present invention provides a barium titanate-based semiconducting ceramic which exhibits excellent PTC characteristic and which can be fired at a temperature lower than 1000.degree. C. The present invention also provides an electronic element fabricated from the ceramic. The semiconducting ceramic contains, in a semiconducting sintered barium titanate; boron oxide; an oxide of at least one of barium, strontium, calcium, lead, yttrium and a rare earth element; and an optional oxide of at least one of titanium, tin, zirconium, niobium, tungsten and antimony in which the atomic boron is0.005.ltoreq.B/.beta..ltoreq.0.50 and1.0.ltoreq.B/(.alpha.-.beta.).ltoreq.4.0wherein .alpha. represents the total number of atoms of barium, strontium, calcium, lead, yttrium and rare earth element contained in the semiconducting ceramic, and .beta. represents the total number of atoms of titanium, tin, zirconium, niobium, tungsten and antimony contained in the semiconducting ceramic.

    摘要翻译: 本发明提供一种钛酸钡系半导体陶瓷,其表现出优异的PTC特性,并可在低于1000℃的温度下烧制。本发明还提供了由陶瓷制成的电子元件。 半导体陶瓷在半导体烧结的钛酸钡中含有; 氧化硼 钡,锶,钙,铅,钇和稀土元素中的至少一种的氧化物; 和钛,锡,锆,铌,钨和锑中的至少一种的任选的氧化物,其中原子硼为0.005≤B/β= 0.50和1.0

    Multilayer positive temperature coefficient thermistor and method for designing the same
    5.
    发明申请
    Multilayer positive temperature coefficient thermistor and method for designing the same 有权
    多层正温度系数热敏电阻及其设计方法

    公开(公告)号:US20070115090A1

    公开(公告)日:2007-05-24

    申请号:US10595558

    申请日:2004-09-13

    IPC分类号: H01C7/13

    摘要: A multilayer PTC thermistor reliably decreases the resistance by decreasing the thickness of ceramic layers composed of a BaTiO3 semiconductor ceramic and achieves a resistance close to the resistance calculated from the multilayer structure. The thermistor is adjusted to satisfy the conditions 5≦X≦18 and 4≦X·Y≦10, wherein X is a thickness (μm) of each ceramic layer disposed between adjacent internal electrodes and Y is a donor content (%) in the barium titanate semiconductor ceramic constituting the ceramic layers, Y being expressed in terms of (number of donor atoms/number of Ti atoms)×100.

    摘要翻译: 多层PTC热敏电阻通过减小由BaTiO 3半导体陶瓷构成的陶瓷层的厚度可靠地降低电阻,并实现接近由多层结构计算的电阻的电阻。 调整热敏电阻以满足条件5 <= X <= 18且4 <= XY <= 10,其中X是设置在相邻内部电极之间的每个陶瓷层的厚度(母体),Y是供体含量(%) 在构成陶瓷层的钛酸钡半导体陶瓷中,Y以(供体原子数/ Ti原子数)×100表示​​。

    Barium titanate-based semiconductor porcelain composition and PTC element including the same
    8.
    发明授权
    Barium titanate-based semiconductor porcelain composition and PTC element including the same 有权
    基于钛酸钡的半导体陶瓷组合物和包含其的PTC元件

    公开(公告)号:US07764161B2

    公开(公告)日:2010-07-27

    申请号:US12413254

    申请日:2009-03-27

    IPC分类号: H01C7/10

    摘要: A barium titanate-based semiconductor ceramic composition and a PTC element that have a high Curie temperature and a low electrical resistivity at room temperature and that exhibit a desired rate of change in resistance are provided. The barium titanate-based semiconductor ceramic composition is a ceramic composition having a perovskite structure containing at least barium and titanium, wherein some of the barium is replaced with an alkali metal element, bismuth, and a rare earth element, and when the content of the titanium is assumed to be 100 parts by mole, a ratio of the content of the alkali metal element to the content of the bismuth plus the content of the rare earth element represented by parts by mole, is 1.00 or more and 1.06 or less. A PTC thermistor includes a ceramic body composed of the barium titanate-based semiconductor ceramic composition having the above feature and electrodes disposed on both side faces of the ceramic body.

    摘要翻译: 提供了一种钛酸钡系半导体陶瓷组合物和PTC元件,其在室温下具有高居里温度和低电阻率并且具有期望的电阻变化率。 钛酸钡类半导体陶瓷组合物是具有至少包含钡和钛的钙钛矿结构的陶瓷组合物,其中一些钡被碱金属元素,铋和稀土元素代替,并且当 假定钛为100份摩尔,碱金属元素的含量与铋的含量加上以摩尔比表示的稀土元素的含量的比为1.00以上且1.06以下。 PTC热敏电阻包括由具有上述特征的钛酸钡系半导体陶瓷组合物和设置在陶瓷体的两侧面的电极构成的陶瓷体。

    Method of producing laminated PTC thermistor
    9.
    发明授权
    Method of producing laminated PTC thermistor 有权
    层压PTC热敏电阻的制造方法

    公开(公告)号:US06984543B2

    公开(公告)日:2006-01-10

    申请号:US10639483

    申请日:2003-08-13

    IPC分类号: H01L21/00

    摘要: A method of producing a laminated PTC thermistor involves alternately laminating electroconductive pastes to form internal electrodes and ceramic green sheets to form semiconductor ceramic layers with a positive resistance-temperature characteristic to form a laminate, firing the laminate to form a ceramic piece, and forming external electrodes on both of the end-faces of the ceramic piece, and heat-treating the ceramic piece having the external electrodes formed thereon at a temperature between about 60° C. and 200° C.

    摘要翻译: 层压PTC热敏电阻的制造方法包括交替层叠导电性糊料以形成内部电极和陶瓷生片,以形成具有正电阻温度特性的半导体陶瓷层,以形成层压体,焙烧该层压体以形成陶瓷件,并形成外部 在陶瓷片的两个端面上的电极,并在其上形成有外部电极的陶瓷片在约60℃至200℃之间的温度下进行热处理。