公开(公告)号：US09076578B2

公开(公告)日：2015-07-07

申请号：US13660527

申请日：2012-10-25

Applicant: Samsung Electro-mechanics Co., Ltd.

Inventor： Sung Hyung Kang ,  Du Won Choi ,  Min Sung Song ,  Sang Hoon Kwon ,  Chang Hoon Kim ,  Byoung Hwa Lee

IPC: H01L41/187 ,  H01C17/065 ,  H01B3/12 ,  H01G4/30 ,  H01C7/00 ,  H01G4/12 ,  C04B35/468 ,  H01C7/02 ,  H01C7/04

CPC classification number: H01C17/06533 ,  C04B35/4682 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3239 ,  C04B2235/3244 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3418 ,  C04B2235/36 ,  C04B2235/442 ,  C04B2235/5409 ,  C04B2235/785 ,  C04B2235/79 ,  H01B3/12 ,  H01C7/003 ,  H01C7/025 ,  H01C7/045 ,  H01G4/1227 ,  H01G4/30 ,  Y10T428/2982

Abstract: There is provided a dielectric composition, including; a base powder including BamTiO3 (0.995≦m≦1.010); a first sub-component including 0.05 to 4.00 moles of an oxide or carbonate containing at least one rare-earth element based on 100 moles of the base powder; a second sub-component including 0.05 to 0.70 moles of an oxide or carbonate containing at least one transition metal; a third sub-component including 0.20 to 2.00 moles of a Si oxide; a fourth sub-component including 0.02 to 1.00 mole of an Al oxide; and a fifth sub-component including 20 to 140% of an oxide containing at least one of Ba and Ca, based on the third sub-component.

Abstract translation: 提供介电组合物，包括： 包括BamTiO 3（0.995＆nlE; m＆amp; 1.0l）的基础粉末; 包含基于100摩尔基础粉末含有至少一种稀土元素的氧化物或碳酸酯的0.05至4.00摩尔的第一子组分; 含有0.05〜0.70摩尔含有至少一种过渡金属的氧化物或碳酸盐的第二子成分; 第三子成分，含有0.20〜2.00摩尔的Si氧化物; 第四副成分，含有0.02〜1.00摩尔的Al氧化物; 和包含20〜140％的含有Ba和Ca中的至少一种的氧化物的第五子成分，基于第三子成分。

公开(公告)号：US20140065308A1

公开(公告)日：2014-03-06

申请号：US14079361

申请日：2013-11-13

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Kum Jin PARK ,  Chang Hak CHOI ,  Jong Hoon YOO ,  Chang Hoon KIM ,  Hyung Joon JEON ,  Hye Young BAEG

IPC: C04B41/50

CPC classification number: C04B41/50 ,  B82Y30/00 ,  B82Y40/00 ,  C04B35/462 ,  C04B35/465 ,  C04B35/4682 ,  C04B35/62805 ,  C04B35/6281 ,  C04B35/62815 ,  C04B35/62886 ,  C04B35/62897 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3286 ,  C04B2235/6025 ,  C04B2235/652 ,  H01B3/12 ,  H01C7/008 ,  H01C7/025 ,  H01C7/045 ,  H01C17/06533 ,  H01G4/1227 ,  H01G4/30 ,  H01L41/1871

Abstract: There are provided a dielectric composition, a method of fabricating the same, and a multilayer ceeramic electronic component using the same. The dielectric composition includes a perovskite powder particle having a surface on which a doping layer is formed, the doping layer being doped with at least one material selected from a group consisting of alkaline earth elements and boron group elements, and rare earth elements.When a perovskite powder particle is synthesized by using a hydrothermal synthesis method, a doping layer doped with at least one material selected from the group consisting of alkaline earth elements and boron group elements and rare earth elements is formed on a surface of the perovskite powder particle, such that a dielectric composition having excellent reliability, dielectric properties, and electric properties can be fabricated.

Abstract translation: 提供介电组合物，其制造方法和使用其的多层陶瓷电子部件。 电介质组合物包括具有形成有掺杂层的表面的钙钛矿粉末颗粒，所述掺杂层掺杂有选自由碱土金属元素和硼族元素组成的组中的至少一种材料和稀土元素。 当通过使用水热合成方法合成钙钛矿粉末颗粒时，在钙钛矿粉末颗粒的表面上形成掺杂有选自碱土金属元素和硼族元素和稀土元素中的至少一种的掺杂层 ，可以制造具有优异的可靠性，介电特性和电性能的电介质组合物。

公开(公告)号：US08076256B2

公开(公告)日：2011-12-13

申请号：US12445198

申请日：2007-10-26

Applicant: Takeshi Shimada ,  Kazuya Toji

Inventor： Takeshi Shimada ,  Kazuya Toji

IPC: C04B35/00 ,  C04B35/14 ,  C04B35/16

CPC classification number: H01C7/025 ,  C01G23/003 ,  C01G23/006 ,  C01G29/006 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/4682 ,  C04B35/62675 ,  C04B35/62685 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3227 ,  C04B2235/3236 ,  C04B2235/3251 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/608 ,  C04B2235/656 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6584 ,  H01C7/045 ,  H01C17/06533 ,  H01G4/1227 ,  H01G7/06 ,  H01L21/31691 ,  H01L28/20

Abstract: It is intended to provide a Pb-free semiconductor ceramic composition capable of shifting its Curie temperature toward a positive direction and capable of enhancing its jump characteristic while minimizing the increase in the resistivity at room temperature. There is provided a semiconductor ceramic composition in which a part of Ba of BaTiO3 is substituted with Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder containing a calcined BT powder containing a calcined powder of (BaR)TiO3 or a calcined powder of Ba(TiM)O3 (in which R and M each are a semiconductor dopant), and a calcined BNT powder containing a calcined powder of (BiNa)TiO3; in which BaCO3 and/or TiO2 is/are added to the calcined BT powder or the calcined BNT powder or to the mixed calcined powder.

Abstract translation: 旨在提供能够使其居里温度朝向正方向移动的能够提高其跳跃特性同时最小化室温电阻率增加的无铅半导体陶瓷组合物。 提供了一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na取代，该半导体陶瓷组合物通过烧结含有煅烧BT粉末的混合煅烧粉末而获得，该煅烧粉末含有（BaR）TiO 3煅烧粉末或 （TiM）O 3（其中R和M各自为半导体掺杂剂）的煅烧粉末和包含（BiNa）TiO 3的煅烧粉末的煅烧BNT粉末; 其中将BaCO 3和/或TiO 2添加到煅烧的BT粉末或煅烧的BNT粉末或混合的煅烧粉末中。

公开(公告)号：US20090167482A1

公开(公告)日：2009-07-02

申请号：US12396600

申请日：2009-03-03

Applicant: Tadamasa Miura ,  Shinichiro Nawai

Inventor： Tadamasa Miura ,  Shinichiro Nawai

IPC: H01C7/10

CPC classification number: C04B35/016 ,  B32B2311/08 ,  C04B35/01 ,  C04B35/6262 ,  C04B35/6263 ,  C04B2235/3232 ,  C04B2235/3263 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3277 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/6025 ,  C04B2235/763 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9669 ,  C04B2237/34 ,  C04B2237/408 ,  H01C1/148 ,  H01C7/041 ,  H01C7/043 ,  H01C7/045 ,  H01C7/18

Abstract: A surface-mount negative-characteristic thermistor includes a ceramic body composed of a semiconductor ceramic material including at least one of Mn, Ni, and Ti; external electrodes disposed on surfaces of the ceramic body; and plating films disposed on surfaces of the external electrodes. When the molar quantity of Mn in the semiconductor ceramic material is represented by a and when the molar quantity of Ni in the semiconductor ceramic material is represented by b, the molar ratio of Mn to Ni is in the range of 55/45≦a/b≦90/10, and when the total molar quantity of Mn and Ni in the semiconductor ceramic material is defined as 100 parts by mole, the content of Ti is in the range of about 0.5 parts by mole to about 25 parts by mole.

Abstract translation: 表面安装负特性热敏电阻包括由包括Mn，Ni和Ti中的至少一种的半导体陶瓷材料构成的陶瓷体; 设置在陶瓷体的表面上的外部电极; 以及设置在外部电极的表面上的镀膜。 当半导体陶瓷材料中的摩尔量由a表示时，并且当半导体陶瓷材料中的Ni的摩尔量表示为b时，Mn与Ni的摩尔比在55/45 <= a / b <= 90/10，并且当半导体陶瓷材料中的Mn和Ni的总摩尔量定义为100份摩尔时，Ti的含量在约0.5份摩尔至约25份的范围内 痣。

公开(公告)号：US07548149B2

公开(公告)日：2009-06-16

申请号：US11835272

申请日：2007-08-07

Applicant: Tadamasa Miura ,  Shinichiro Nawai

Inventor： Tadamasa Miura ,  Shinichiro Nawai

IPC: H01C7/10

CPC classification number: C04B35/016 ,  B32B2311/08 ,  C04B35/01 ,  C04B35/6262 ,  C04B35/6263 ,  C04B2235/3232 ,  C04B2235/3263 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3277 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/6025 ,  C04B2235/763 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9669 ,  C04B2237/34 ,  C04B2237/408 ,  H01C1/148 ,  H01C7/041 ,  H01C7/043 ,  H01C7/045 ,  H01C7/18

Abstract: A surface-mount negative-characteristic thermistor includes a ceramic body composed of a semiconductor ceramic material including at least one of Mn, Ni, and Ti; external electrodes disposed on surfaces of the ceramic body; and plating films disposed on surfaces of the external electrodes. When the molar quantity of Mn in the semiconductor ceramic material is represented by a and when the molar quantity of Ni in the semiconductor ceramic material is represented by b, the molar ratio of Mn to Ni is in the range of 55/45≦a/b≦90/10, and when the total molar quantity of Mn and Ni in the semiconductor ceramic material is defined as 100 parts by mole, the content of Ti is in the range of about 0.5 parts by mole to about 25 parts by mole.

Abstract translation: 表面安装负特性热敏电阻包括由包括Mn，Ni和Ti中的至少一种的半导体陶瓷材料构成的陶瓷体; 设置在陶瓷体的表面上的外部电极; 以及设置在外部电极的表面上的镀膜。 当半导体陶瓷材料中的摩尔量由a表示时，并且当半导体陶瓷材料中的Ni的摩尔量表示为b时，Mn与Ni的摩尔比在55/45 <= a / b <= 90/10，当将半导体陶瓷材料中的Mn和Ni的总摩尔量定义为100份摩尔时，Ti的含量在约0.5份摩尔至约25份的范围内 痣。

公开(公告)号：US6090735A

公开(公告)日：2000-07-18

申请号：US167895

申请日：1998-10-07

Applicant: Akinori Nakayama ,  Terunobu Ishikawa ,  Hideaki Nimi ,  Ryouichi Urahara ,  Yukio Sakabe

Inventor： Akinori Nakayama ,  Terunobu Ishikawa ,  Hideaki Nimi ,  Ryouichi Urahara ,  Yukio Sakabe

IPC: C04B35/01 ,  C04B35/50 ,  H01B1/08 ,  H01C7/04 ,  H01C17/065

CPC classification number: C04B35/01 ,  C04B35/50 ,  H01B1/08 ,  H01C17/06533 ,  H01C7/043 ,  H01C7/045 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3277 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/446 ,  C04B2235/447 ,  C04B2235/96

Abstract: A semiconductive ceramic composition having negative resistance-temperature characteristics, wherein the composition comprises lanthanum cobalt oxide as the primary component, and, as secondary components, at least one oxide of an element selected from B, Fe and Al and at least one oxide of an element selected from Si, Zr, Hf, Ta, Sn, Sb, W, Mo, Te, Ce, Nb, Mn, Th and P. A semiconductive ceramic composition having a resistivity of approximately 10 .OMEGA..multidot.cm to 100 .OMEGA..multidot.cm at room temperature is obtained by controlling the amount of additives. Since the resistivity at room temperature can be enhanced to several times or more that of the conventional compositions while characteristics of the conventional compositions are maintained, the composition may be widely applied to control heavy current.

Abstract translation: 一种具有负电阻 - 温度特性的半导体陶瓷组合物，其中所述组合物包含氧化镧钴作为主要组分，并且作为次要组分，选自B，Fe和Al中的至少一种元素的氧化物和至少一种氧化物 选自Si，Zr，Hf，Ta，Sn，Sb，W，Mo，Te，Ce，Nb，Mn，Th和P中的一种元素。在室温下电阻率为约10欧米伽至100欧米伽x厘米的半导体陶瓷组合物 通过控制添加剂的量获得。 由于在保持常规组合物的特性的同时，常规组合物的电阻率可以提高到常规组合物的几倍或更多，因此组合物可广泛用于控制大电流。

公开(公告)号：US5504371A

公开(公告)日：1996-04-02

申请号：US276514

申请日：1994-07-15

Applicant: Hideaki Niimi ,  Kenjiro Mihara ,  Yuichi Takaoka

Inventor： Hideaki Niimi ,  Kenjiro Mihara ,  Yuichi Takaoka

IPC: C04B35/00 ,  H01C7/04 ,  H01L23/48 ,  H01C7/10

CPC classification number: H01C7/045

Abstract: A ceramic element is formed by a rare earth and transition element oxide such as LaCoO.sub.3. The ceramic element is substantially isolated from the atmosphere by a case base, a case, etc.

Abstract translation: 陶瓷元件由稀土和过渡元素氧化物如LaCoO 3形成。 陶瓷元件通过壳体基座，壳体等与大气基本隔离。

公开(公告)号：US4208786A

公开(公告)日：1980-06-24

申请号：US963614

申请日：1978-11-24

Applicant: Stanley R. Merchant ,  Michael J. Cermak

Inventor： Stanley R. Merchant ,  Michael J. Cermak

IPC: C04B35/46 ,  G01N27/12 ,  H01C7/04 ,  H01C7/00 ,  G01N7/02

CPC classification number: G01N27/12 ,  C04B35/46 ,  H01C7/045 ,  Y10T29/49085 ,  Y10T29/49101

Abstract: A high temperature thermistor and its method of fabrication are disclosed. The thermistor is fabricated from titanium dioxide ceramic forming material and is fabricated to achieve a high degree of densification approaching 100% of theoretical density. At elevated temperatures in the range of from about 700.degree. F. to about 1500.degree. F. densified titania ceramic material behaves as a semiconductor having a resistance which is responsive principally to the temperature of the thermistor element. The thermistor is fabricated by processing titania powder which includes a substantial majority of rutile phase material. The titania powder is processed to achieve a thermistor chip or member which demonstrates a high degree of density.

Abstract translation: 公开了一种高温热敏电阻及其制造方法。 该热敏电阻由二氧化钛陶瓷形​​成材料制成，并被制造以实现接近100％理论密度的高度致密化。 在约700°F至约1500°F范围内的高温下，致密化的二氧化钛陶瓷材料表现为具有主要响应于热敏电阻元件的温度的电阻的半导体。 该热敏电阻是通过加工二氧化钛粉末来制造的，该粉末包括绝大部分的金红石相材料。 处理二氧化钛粉末以获得表现出高密度的热敏电阻芯片或部件。

公开(公告)号：US4206647A

公开(公告)日：1980-06-10

申请号：US6958

申请日：1979-01-25

Applicant: Stanley R. Merchant ,  Michael J. Cermak

Inventor： Stanley R. Merchant ,  Michael J. Cermak

IPC: C04B35/46 ,  G01K7/22 ,  G01N27/12 ,  H01C7/04

CPC classification number: C04B35/46 ,  G01K7/22 ,  G01N27/12 ,  H01C7/045 ,  Y10T29/49085

Abstract: A high temperature thermistor and its method of fabrication are disclosed. The thermistor is fabricated from titanium dioxide ceramic forming material and is fabricated to achieve a high degree of densification approaching 100% of theoretical density. At elevated temperatures in the range of from about 700.degree. F. to about 1500.degree. F. densified titania ceramic material behaves as a semiconductor having a resistance which is responsive principally to the temperature of the thermistor element. The thermistor is fabricated by processing titania powder which includes a substantial majority of rutile phase material. The titania powder is processed to achieve a thermistor chip or member which demonstrates a high degree of density.

公开(公告)号：US3386856A

公开(公告)日：1968-06-04

申请号：US41079464

申请日：1964-11-12

Applicant: PHILIPS CORP

Inventor： NOORLANDER WILLEM

IPC: C04B35/465 ,  C04B35/47 ,  H01B1/16 ,  H01C7/04 ,  H01C7/10 ,  H01C7/102 ,  H01C7/112 ,  H01C7/115 ,  H01G4/12

CPC classification number: H01C7/10 ,  C04B35/465 ,  C04B35/47 ,  H01B1/16 ,  H01C7/045 ,  H01C7/102 ,  H01C7/112 ,  H01C7/115 ,  H01G4/1281 ,  Y10T29/435