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公开(公告)号：US20080049487A1
公开(公告)日：2008-02-28
申请号：US11889388
申请日：2007-08-13
CPC分类号： G11C11/22 , G11C13/0007 , G11C13/0069 , G11C17/165 , G11C2013/009 , G11C2213/31 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/147
摘要： A semiconductor memory device comprises an array of memory cells each comprising a variable resistance element and a cell access transistor, and a voltage supplying means for applying the first voltage between the bit and source lines connected to the selected memory cell, the third voltage to the word line to apply the first write voltage between the two ports of the variable resistance element for shifting the resistance from the first state to the second state, and the second voltage opposite in polarity to the first voltage between the bit and source lines, the third voltage to the word line to apply the second write voltage opposite in polarity to and different in the absolute value from the first write voltage between the two ports for shifting the resistance from the second state to the first state, the voltage supplying means comprising an n-channel MOSFET and a p-channel MOSFET.
摘要翻译： 一种半导体存储器件，包括一个存储单元阵列，每个存储单元包括一个可变电阻元件和一个单元存取晶体管;以及一个电压提供装置，用于将第一电压施加在连接到所选存储单元的位与源极之间， 字线，用于将可变电阻元件的两个端口之间的第一写入电压施加到用于将电阻从第一状态移位到第二状态的第二电压，以及与位线和源极线之间的第一电压极性相反的第二电压，第三 电压到字线以施加与两端口之间的第一写入电压的极性相反的绝对值的第二写入电压，并将电阻从第二状态移位到第一状态，电压提供装置包括n 沟道MOSFET和p沟道MOSFET。
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公开(公告)号：US07542326B2
公开(公告)日：2009-06-02
申请号：US11889388
申请日：2007-08-13
IPC分类号： G11C11/00
CPC分类号： G11C11/22 , G11C13/0007 , G11C13/0069 , G11C17/165 , G11C2013/009 , G11C2213/31 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/147
摘要： A semiconductor memory device comprises an array of memory cells each comprising a variable resistance element and a cell access transistor, and a voltage supplying means for applying the first voltage between the bit and source lines connected to the selected memory cell, the third voltage to the word line to apply the first write voltage between the two ports of the variable resistance element for shifting the resistance from the first state to the second state, and the second voltage opposite in polarity to the first voltage between the bit and source lines, the third voltage to the word line to apply the second write voltage opposite in polarity to and different in the absolute value from the first write voltage between the two ports for shifting the resistance from the second state to the first state, the voltage supplying means comprising an n-channel MOSFET and a p-channel MOSFET.
摘要翻译： 一种半导体存储器件，包括一个存储单元阵列，每个存储单元包括一个可变电阻元件和一个单元存取晶体管;以及一个电压提供装置，用于将第一电压施加在连接到所选存储单元的位与源极之间， 字线，用于将可变电阻元件的两个端口之间的第一写入电压施加到用于将电阻从第一状态移位到第二状态的第二电压，以及与位线和源极线之间的第一电压极性相反的第二电压，第三 电压到字线以施加与两端口之间的第一写入电压的极性相反的绝对值的第二写入电压，并将电阻从第二状态移位到第一状态，电压提供装置包括n 沟道MOSFET和p沟道MOSFET。
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公开(公告)号：US07511985B2
公开(公告)日：2009-03-31
申请号：US11785311
申请日：2007-04-17
申请人： Shinji Horii , Shinichi Sato , Satoru Yamagata
发明人： Shinji Horii , Shinichi Sato , Satoru Yamagata
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C13/0007 , G11C13/0061 , G11C13/0069 , G11C2213/31 , G11C2213/79
摘要： A semiconductor memory device comprises a array of memory cells arranged in a matrix, each memory cell connected to one end of a variable resistor element where the electric resistance is shifted from the first state to the second state by applying the first writing voltage and from the second state to the first state by applying the second writing voltage, and the source or drain of the selecting transistor. The second writing time for the second writing action of shifting the electric resistance of the variable resistor element from the second state to the first state is longer than the first writing time of shifting the same reversely. The second number of the memory cells subjected to the second writing action at once is greater than the first memory cell number subjected to the first writing action at once, and at least the second number is two or more.
摘要翻译： 半导体存储器件包括以矩阵形式布置的存储器单元阵列，每个存储器单元连接到可变电阻器元件的一端，其中电阻通过施加第一写入电压从第一状态转移到第二状态，并且从 施加第二写入电压的第二状态到第一状态，以及选择晶体管的源极或漏极。 用于将可变电阻元件的电阻从第二状态转换到第一状态的第二写入动作的第二写入时间比反向移位的第一写入时间长。 经受第二写入动作的第二数量的存储单元立刻大于经受第一写入动作的第一存储单元数，并且至少第二数量是两个或更多个。
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公开(公告)号：US20070285972A1
公开(公告)日：2007-12-13
申请号：US11785311
申请日：2007-04-17
申请人： Shinji Horii , Shinichi Sato , Satoru Yamagata
发明人： Shinji Horii , Shinichi Sato , Satoru Yamagata
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C13/0007 , G11C13/0061 , G11C13/0069 , G11C2213/31 , G11C2213/79
摘要： A semiconductor memory device comprises a array of memory cells arranged in a matrix, each memory cell connected to one end of a variable resistor element where the electric resistance is shifted from the first state to the second state by applying the first writing voltage and from the second state to the first state by applying the second writing voltage, and the source or drain of the selecting transistor. The second writing time for the second writing action of shifting the electric resistance of the variable resistor element from the second state to the first state is longer than the first writing time of shifting the same reversely. The second number of the memory cells subjected to the second writing action at once is greater than the first memory cell number subjected to the first writing action at once, and at least the second number is two or more.
摘要翻译： 半导体存储器件包括以矩阵形式布置的存储器单元阵列，每个存储器单元连接到可变电阻器元件的一端，其中电阻通过施加第一写入电压从第一状态转移到第二状态，并且从 施加第二写入电压的第二状态到第一状态，以及选择晶体管的源极或漏极。 用于将可变电阻元件的电阻从第二状态转换到第一状态的第二写入动作的第二写入时间比反向移位的第一写入时间长。 经受第二写入动作的第二数量的存储单元立刻大于经受第一写入动作的第一存储单元数，并且至少第二数量是两个或更多个。
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公开(公告)号：US20050141276A1
公开(公告)日：2005-06-30
申请号：US11019474
申请日：2004-12-23
申请人： Noboru Takeuchi , Satoru Yamagata , Shinichi Sato
发明人： Noboru Takeuchi , Satoru Yamagata , Shinichi Sato
IPC分类号： H01L21/8247 , G11C16/04 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/115 , G11C16/0416 , H01L27/11521
摘要： A semiconductor memory device including: a semiconductor substrate; a plurality of memory cells arranged in a matrix having columns and rows on the semiconductor substrate and each including a source, a drain and a control gate; a plurality of insulative device isolation layers positioned in a surface portion of the substrate as extending in a column direction for isolating the memory cells arranged in each row of the matrix; a plurality of word lines positioned on the substrate as extending in a row direction and each constituted by the control gates of the memory cells of the each row which are connected in series; the source and the drain of each of the memory cells of the each row being positioned in the surface portion of the substrate on opposite sides of a corresponding one of the word lines between an adjacent pair of insulative device isolation layers; and a common source line positioned on the substrate between an adjacent pair of word lines with the intervention of side wall films positioned on side walls of the word lines as extending across the insulative device isolation layers and connecting the sources of the memory cells of the each row in series.
摘要翻译： 一种半导体存储器件，包括：半导体衬底; 在半导体衬底上布置成具有列和行的矩阵的多个存储单元，每个存储单元包括源极，漏极和控制栅极; 多个绝缘体隔离层，位于基板的表面部分中，沿列方向延伸，用于隔离布置在矩阵的每一行中的存储单元; 位于所述基板上的多个字线，沿着行方向延伸，并且各自由串联连接的各行的存储单元的控制栅极构成; 每行的每个存储单元的源极和漏极位于相邻的一对绝缘器件隔离层之间的对应的一条字线的相对侧上的衬底的表面部分中; 以及位于相邻的一对字线之间的衬底上的公共源极线，其中侧壁膜的介入位于字线的侧壁上，延伸穿过绝缘器件隔离层并连接每个字线的存储器单元的源 排列。
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公开(公告)号：US20060063316A1
公开(公告)日：2006-03-23
申请号：US11227224
申请日：2005-09-16
申请人： Satoru Yamagata , Masayuki Hirata , Shinichi Sato
发明人： Satoru Yamagata , Masayuki Hirata , Shinichi Sato
IPC分类号： H01L21/338 , H01L21/8238
CPC分类号： H01L21/823892 , H01L21/823462 , H01L21/823493 , H01L21/823857 , H01L29/6659 , H01L29/7833
摘要： A method for fabricating a semiconductor device including on a single semiconductor substrate, a first MOS transistor having a first gate insulating film of a predetermined thickness, and second and third MOS transistors sharing a second gate insulating film smaller in thickness than the first gate insulating film, the third MOS transistor being lower in threshold voltage than the second MOS transistor, the method includes the steps of: adjusting the threshold voltages of the first and third MOS transistors by first ion-implantation; and adjusting the threshold voltage of the second MOS transistor by second ion-implantation, the second ion-implantation being performed under implantation conditions different from those of the first ion-implantation.
摘要翻译： 一种用于制造半导体器件的方法，包括在单个半导体衬底上，具有预定厚度的第一栅极绝缘膜的第一MOS晶体管，以及共享第二栅极绝缘膜的第二和第三MOS晶体管，其厚度小于第一栅极绝缘膜 所述第三MOS晶体管的阈值电压低于所述第二MOS晶体管，所述方法包括以下步骤：通过第一离子注入来调整所述第一和第三MOS晶体管的阈值电压; 以及通过第二离子注入来调整所述第二MOS晶体管的阈值电压，所述第二离子注入在与所述第一离子注入不同的注入条件下进行。
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公开(公告)号：US07276407B2
公开(公告)日：2007-10-02
申请号：US11227224
申请日：2005-09-16
申请人： Satoru Yamagata , Masayuki Hirata , Shinichi Sato
发明人： Satoru Yamagata , Masayuki Hirata , Shinichi Sato
IPC分类号： H01L21/8238
CPC分类号： H01L21/823892 , H01L21/823462 , H01L21/823493 , H01L21/823857 , H01L29/6659 , H01L29/7833
摘要： A method for fabricating a semiconductor device including on a single semiconductor substrate, a first MOS transistor having a first gate insulating film of a predetermined thickness, and second and third MOS transistors sharing a second gate insulating film smaller in thickness than the first gate insulating film, the third MOS transistor being lower in threshold voltage than the second MOS transistor, the method includes the steps of: adjusting the threshold voltages of the first and third MOS transistors by first ion-implantation; and adjusting the threshold voltage of the second MOS transistor by second ion-implantation, the second ion-implantation being performed under implantation conditions different from those of the first ion-implantation.
摘要翻译： 一种用于制造半导体器件的方法，包括在单个半导体衬底上，具有预定厚度的第一栅极绝缘膜的第一MOS晶体管，以及共享第二栅极绝缘膜的第二和第三MOS晶体管，其厚度小于第一栅极绝缘膜 所述第三MOS晶体管的阈值电压低于所述第二MOS晶体管，所述方法包括以下步骤：通过第一离子注入来调整所述第一和第三MOS晶体管的阈值电压; 以及通过第二离子注入来调整所述第二MOS晶体管的阈值电压，所述第二离子注入在与所述第一离子注入不同的注入条件下进行。
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公开(公告)号：US08853579B2
公开(公告)日：2014-10-07
申请号：US13978473
申请日：2012-04-26
CPC分类号： F16C35/02 , F16C33/20 , H01H3/46 , H01H13/14 , H01H2003/326
摘要： A bearing mechanism has a rotary member made of a resin, having a cylindrical bearing integrally formed thereof and protruding from a side surface of the rotary member; a base member made of a resin and rotatably supporting the rotary member, the base member having a support shaft protruding from a position facing the cylindrical bearing of the rotary member; and an urging member constantly urging the rotary member in a predetermined direction. The cylindrical bearing of the rotary member has a bearing hole to fit and insert the support shaft of the base member.
摘要翻译： 轴承机构具有由树脂制成的旋转构件，其具有一体地形成并从旋转构件的侧表面突出的圆柱形轴承; 由树脂制成并可旋转地支撑所述旋转件的基座件，所述基座件具有从面向所述旋转件的圆柱形轴承的位置突出的支撑轴; 以及推动构件在预定方向上不断地推动旋转构件。 旋转构件的圆柱形轴承具有用于装配和插入基座构件的支撑轴的轴承孔。
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公开(公告)号：US08724284B2
公开(公告)日：2014-05-13
申请号：US13475376
申请日：2012-05-18
申请人： Hidenobu Umeda , Makoto Yoshino , Takahiro Sato , Takuo Hattori , Shinichi Sato , Takeshi Shibayama
发明人： Hidenobu Umeda , Makoto Yoshino , Takahiro Sato , Takuo Hattori , Shinichi Sato , Takeshi Shibayama
IPC分类号： H01H47/00
CPC分类号： H05F3/04 , H01G4/40 , H01T2/00 , H01T4/12 , H05K9/0067 , H05K9/0079
摘要： An electrostatic protection component includes: a body in which a plurality of ceramic substrates is laminated; and a pair of discharge electrodes which are formed within the body and which are spaced to face each other. The discharge electrodes include main body portions extending along a longitudinal direction, and the main body portions include tips in the longitudinal direction and side edges extending along the longitudinal direction. The pair of discharge electrodes are arranged such that both the main body portions are adjacent to each other in a short direction. The discharge electrodes face each other in the short direction between the side edges, and discharge occurs only between the side edges, between the discharge electrodes.
摘要翻译： 静电保护部件包括：层叠有多个陶瓷基板的主体; 以及一对放电电极，其形成在主体内并且彼此间隔开。 放电电极包括沿着纵向方向延伸的主体部分，并且主体部分包括沿纵向方向的尖端和沿着纵向方向延伸的侧边缘。 一对放电电极被布置成使得两个主体部分在短方向上彼此相邻。 放电电极在侧边缘之间在短的方向上彼此面对，并且放电仅在放电电极之间的侧边缘之间发生。
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公开(公告)号：US20130301962A1
公开(公告)日：2013-11-14
申请号：US13978473
申请日：2012-04-26
IPC分类号： F16C35/02
CPC分类号： F16C35/02 , F16C33/20 , H01H3/46 , H01H13/14 , H01H2003/326
摘要： A bearing mechanism has a rotary member made of a resin, having a cylindrical bearing integrally formed thereof and protruding from a side surface of the rotary member; a base member made of a resin and rotatably supporting the rotary member, the base member having a support shaft protruding from a position facing the cylindrical bearing of the rotary member; and an urging member constantly urging the rotary member in a predetermined direction. The cylindrical bearing of the rotary member has a bearing hole to fit and insert the support shaft of the base member.
摘要翻译： 轴承机构具有由树脂制成的旋转构件，其具有一体地形成并从旋转构件的侧表面突出的圆柱形轴承; 由树脂制成并可旋转地支撑所述旋转件的基座件，所述基座件具有从面向所述旋转件的圆柱形轴承的位置突出的支撑轴; 以及推动构件在预定方向上不断地推动旋转构件。 旋转构件的圆柱形轴承具有用于装配和插入基座构件的支撑轴的轴承孔。
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