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    GaN-based light-emitting diode structure
    1.
    发明申请
    GaN-based light-emitting diode structure 审中-公开
    GaN基发光二极管结构

    公开(公告)号：US20050236636A1

    公开(公告)日：2005-10-27

    申请号：US10829934

    申请日：2004-04-23

    申请人： Schang-Jing Hon ,  Mu-Jen Lai ,  Chi-Feng Chan ,  Jenn-Bin Huang ,  Chen-Fu Chiang

    发明人： Schang-Jing Hon ,  Mu-Jen Lai ,  Chi-Feng Chan ,  Jenn-Bin Huang ,  Chen-Fu Chiang

    IPC分类号： H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32

    摘要： In a GaN-based light-emitting diode structure, a transparent conductive oxide layer is formed as a window layer on a GaN contact layer having a surface textured layer, and the textured layer acts as an ohmic contact layer with the transparent conductive oxide layer. Therefore, it is possible to reduce effectively the contact resistance and the working voltage, while the optical guiding effect is interrupted by the textured layer, to obtain thereby an enhancement of light extraction efficiency and thus an increase in the external quantum yield.

    摘要翻译： 在基于GaN的发光二极管结构中，在具有表面纹理化层的GaN接触层上形成透明导电氧化物层作为窗口层，并且纹理化层用作与透明导电氧化物层的欧姆接触层。 因此，可以有效地降低接触电阻和工作电压，同时导光效应被纹理层中断，从而提高光提取效率，从而提高外部量子产率。

    Gallium nitride based light-emitting device
    5.
    发明申请
    Gallium nitride based light-emitting device 有权
    基于氮化镓的发光器件

    公开(公告)号：US20060138449A1

    公开(公告)日：2006-06-29

    申请号：US11352205

    申请日：2006-02-13

    申请人： Schang-Jing Hon ,  Jenn-Bin Huang

    发明人： Schang-Jing Hon ,  Jenn-Bin Huang

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/32 ,  H01L33/105 ,  H01L33/465

    摘要： A manufacturing method and a thus produced light-emitting structure for a white colored light-emitting device (LED) and the LED itself are disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so that the white colored LED may be more accurately controlled in its generated white colored light, which efficiently reduces deficiency, generates natural white colored light and aids in luminous efficiency promotion. In addition to the resonant cavity structure, the light-emitting structure also includes a contact layer, an n-type metal electrode and a p-type metal electrode.

    摘要翻译： 公开了一种用于白色发光器件（LED）和LED本身的制造方法和由此制造的发光结构。 白色LED包括谐振腔结构，产生和混合可在谐振腔结构中混合成白色光的光，从而可以在其产生的白色光中更准确地控制白色LED，从而有效地减少缺陷 产生天然白色光，有助于发光效率的提升。 除了谐振腔结构之外，发光结构还包括接触层，n型金属电极和p型金属电极。

    Gallium nitride based light-emitting device
    6.
    发明授权
    Gallium nitride based light-emitting device 有权
    基于氮化镓的发光器件

    公开(公告)号：US07345315B2

    公开(公告)日：2008-03-18

    申请号：US11352205

    申请日：2006-02-13

    申请人： Schang-Jing Hon ,  Jenn-Bin Huang

    发明人： Schang-Jing Hon ,  Jenn-Bin Huang

    IPC分类号： H01L29/22

    CPC分类号： H01L33/32 ,  H01L33/105 ,  H01L33/465

    摘要： A manufacturing method and a thus produced light-emitting structure for a white colored light-emitting device (LED) and the LED itself are disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so that the white colored LED may be more accurately controlled in its generated white colored light, which efficiently reduces deficiency, generates natural white colored light and aids in luminous efficiency promotion. In addition to the resonant cavity structure, the light-emitting structure also includes a contact layer, an n-type metal electrode and a p-type metal electrode.

    摘要翻译： 公开了一种用于白色发光器件（LED）和LED本身的制造方法和由此制造的发光结构。 白色LED包括谐振腔结构，产生和混合可在谐振腔结构中混合成白色光的光，从而可以在其产生的白色光中更准确地控制白色LED，从而有效地减少缺陷 产生天然白色光，有助于发光效率的提升。 除了谐振腔结构之外，发光结构还包括接触层，n型金属电极和p型金属电极。

    Method for manufacturing a light-emitting structure of a light-emitting device (LED)
    7.
    发明授权
    Method for manufacturing a light-emitting structure of a light-emitting device (LED) 有权
    制造发光装置（LED）的发光结构的方法

    公开(公告)号：US07279347B2

    公开(公告)日：2007-10-09

    申请号：US10720063

    申请日：2003-11-25

    申请人： Schang-Jing Hon ,  Jenn-Bin Huang

    发明人： Schang-Jing Hon ,  Jenn-Bin Huang

    IPC分类号： H01L21/00

    CPC分类号： H01L33/32 ,  H01L33/105 ,  H01L33/465

    摘要： A method for manufacturing a light-emitting structure of a light-emitting device (LED) is disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so that the white colored LED may be more accurately controlled in its generated white colored light, which efficiently reduces deficiency, generates natural white colored light and aids in luminous efficiency promotion. In addition to the resonant cavity structure, the light-emitting structure also includes a contact layer, an n-type metal electrode, and a p-type metal electrode.

    摘要翻译： 公开了一种用于制造发光器件（LED）的发光结构的方法。 白色LED包括谐振腔结构，产生和混合可在谐振腔结构中混合成白色光的光，从而可以在其产生的白色光中更准确地控制白色LED，从而有效地减少缺陷 产生天然白色光，有助于发光效率的提升。 除了谐振腔结构之外，发光结构还包括接触层，n型金属电极和p型金属电极。

    Gallium nitride based compound semiconductor light-emitting device
    8.
    发明授权
    Gallium nitride based compound semiconductor light-emitting device 失效
    氮化镓系化合物半导体发光元件

    公开(公告)号：US06992331B2

    公开(公告)日：2006-01-31

    申请号：US10700536

    申请日：2003-11-05

    申请人： Schang-Jing Hon ,  Jenn-Bin Huang ,  Nai-Guann Yih

    发明人： Schang-Jing Hon ,  Jenn-Bin Huang ,  Nai-Guann Yih

    IPC分类号： H01L27/15

    CPC分类号： H01L33/42 ,  H01L33/22 ,  H01L33/32

    摘要： Disclosed are a GaN based compound semiconductor light emitting diode (LED) and a manufacturing method therefor. In the LED, a combination of a light extraction layer and an adaptive layer is formed over a multi-layer epitaxial structure,wherein the light extraction layer is a light transmissible impurity doped metal oxide and the adaptive layer is a Ni/Au layer used to enhance ohmic contact between the light extraction layer and the multi-layer epitaxial structure.

    摘要翻译： 公开了一种GaN基化合物半导体发光二极管（LED）及其制造方法。 在LED中，在多层外延结构上形成光提取层和自适应层的组合，其中光提取层是透光的杂质掺杂金属氧化物，并且自适应层是用于 增强光提取层和多层外延结构之间的欧姆接触。