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    GaN-based light-emitting diode structure
    4.
    发明申请
    GaN-based light-emitting diode structure 审中-公开
    GaN基发光二极管结构

    公开(公告)号：US20050236636A1

    公开(公告)日：2005-10-27

    申请号：US10829934

    申请日：2004-04-23

    申请人： Schang-Jing Hon ,  Mu-Jen Lai ,  Chi-Feng Chan ,  Jenn-Bin Huang ,  Chen-Fu Chiang

    发明人： Schang-Jing Hon ,  Mu-Jen Lai ,  Chi-Feng Chan ,  Jenn-Bin Huang ,  Chen-Fu Chiang

    IPC分类号： H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32

    摘要： In a GaN-based light-emitting diode structure, a transparent conductive oxide layer is formed as a window layer on a GaN contact layer having a surface textured layer, and the textured layer acts as an ohmic contact layer with the transparent conductive oxide layer. Therefore, it is possible to reduce effectively the contact resistance and the working voltage, while the optical guiding effect is interrupted by the textured layer, to obtain thereby an enhancement of light extraction efficiency and thus an increase in the external quantum yield.

    摘要翻译： 在基于GaN的发光二极管结构中，在具有表面纹理化层的GaN接触层上形成透明导电氧化物层作为窗口层，并且纹理化层用作与透明导电氧化物层的欧姆接触层。 因此，可以有效地降低接触电阻和工作电压，同时导光效应被纹理层中断，从而提高光提取效率，从而提高外部量子产率。

    Structure and manufacturing of gallium nitride light emitting diode
    5.
    发明授权
    Structure and manufacturing of gallium nitride light emitting diode 有权
    氮化镓发光二极管的结构和制造

    公开(公告)号：US07208752B2

    公开(公告)日：2007-04-24

    申请号：US10840267

    申请日：2004-05-07

    申请人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

    发明人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

    IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

    CPC分类号： H01L33/32 ,  H01L33/14 ,  Y10S257/918

    摘要： A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohmic contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.

    摘要翻译： 氮化镓发光二极管的结构具有包括扩散阻挡层，欧姆接触层和窗口层的透明导电窗口层。 通过使用添加的畴接触层，发光二极管的扩散阻挡层和P型半导体层被欧姆接触。 然后，通过施加扩散阻挡层来阻止窗口层与域接触层的接触的扩散，从而降低工作电压并提高透明度，阻止了接触电阻率的上升。

    Structure and manufacturing of gallium nitride light emitting diode
    6.
    发明申请
    Structure and manufacturing of gallium nitride light emitting diode 有权
    氮化镓发光二极管的结构和制造

    公开(公告)号：US20050191179A1

    公开(公告)日：2005-09-01

    申请号：US10840267

    申请日：2004-05-07

    申请人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

    发明人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

    IPC分类号： H01L21/28 ,  H01L31/0328 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42

    CPC分类号： H01L33/32 ,  H01L33/14 ,  Y10S257/918

    摘要： A structure and manufacturing of a gallium nitride light emitting diode discloses a transparent conductive window layer comprising a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohimc contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.

    摘要翻译： 氮化镓发光二极管的结构和制造公开了包括扩散阻挡层，欧姆接触层和窗口层的透明导电窗口层。 通过使用添加的畴接触层，发光二极管的扩散阻挡层和P型半导体层被接触。 然后，通过施加扩散阻挡层来阻止窗口层与域接触层的接触的扩散，从而降低工作电压并提高透明度，阻止了接触电阻率的上升。

    Gallium-nitride based light emitting diode structure and fabrication thereof
    9.
    发明申请
    Gallium-nitride based light emitting diode structure and fabrication thereof 有权
    氮化镓基发光二极管结构及其制造

    公开(公告)号：US20060244017A1

    公开(公告)日：2006-11-02

    申请号：US11428405

    申请日：2006-07-03

    申请人： Mu-Jen Lai ,  Schang-Jing Hon

    发明人： Mu-Jen Lai ,  Schang-Jing Hon

    IPC分类号： H01L29/80 ,  H01L31/112

    CPC分类号： H01L33/42 ,  H01L33/32

    摘要： A method for fabricating GaN-based LED is provided. The method first forms a first contact spreading metallic layer on top of the texturing surface of the p-type ohmic contact layer. The method then forms a second and a third contact spreading metallic layers on top of the first contact spreading layer. The p-type transparent metallic conductive layer composed of the three contact spreading metallic layers, after undergoing an alloying process within an oxygenic or nitrogenous environment under a high temperature, would have a superior conductivity. The p-type transparent metallic conductive layer could enhance the lateral contact uniformity between the p-type metallic electrode and the p-type ohmic contact layer, so as to avoid the localized light emission resulted from the uneven distribution of the second contact spreading metallic layer within the third contact spreading metallic layer. The GaN-based LED's working voltage and external quantum efficiency are also significantly improved.

    摘要翻译： 提供了一种用于制造GaN基LED的方法。 该方法首先在p型欧姆接触层的纹理表面的顶部形成第一接触扩展金属层。 该方法然后在第一接触扩散层的顶部上形成第二和第三接触扩展金属层。 由三层接触扩散金属层构成的p型透明金属导电层，在高温下在含氧或含氮环境中进行合金化处理后，具有优异的导电性。 p型透明金属导电层可以增强p型金属电极和p型欧姆接触层之间的横向接触均匀性，以避免由于第二接触扩散金属层的不均匀分布引起的局部发光 在第三接触扩散金属层内。 GaN基LED的工作电压和外部量子效率也得到显着提高。

    Vertical electrode structure of white light emitting diode
    10.
    发明申请
    Vertical electrode structure of white light emitting diode 审中-公开
    白色发光二极管的垂直电极结构

    公开(公告)号：US20050280352A1

    公开(公告)日：2005-12-22

    申请号：US10982810

    申请日：2004-11-08

    申请人： Mu-Jen Lai

    发明人： Mu-Jen Lai

    IPC分类号： H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H05B33/00

    CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/32

    摘要： A white light emitting diode discloses a transparently conductive an adhesion layer combining the light emitting diode of GaN and ZnTe or ZnSe as the substrate of light transfer layer. While the light emitting diode of GaN emits a blue wavelength, the blue part is absorbed by the light transfer layer either in ZnTe or in ZnSe thereto emits another yellow wavelength. After the yellow light and the blue light mix together, the white light is produced.

    摘要翻译： 白色发光二极管公开了将GaN和ZnTe或ZnSe的发光二极管作为光传输层的基板组合的透明导电粘合层。 当GaN的发光二极管发出蓝色波长时，蓝色部分被ZnTe或ZnSe中的光传输层吸收，发射另外的黄色波长。 黄灯和蓝光混合在一起后，产生白光。