公开(公告)号：US07345315B2

公开(公告)日：2008-03-18

申请号：US11352205

申请日：2006-02-13

申请人： Schang-Jing Hon ,  Jenn-Bin Huang

发明人： Schang-Jing Hon ,  Jenn-Bin Huang

IPC分类号： H01L29/22

CPC分类号： H01L33/32 ,  H01L33/105 ,  H01L33/465

摘要： A manufacturing method and a thus produced light-emitting structure for a white colored light-emitting device (LED) and the LED itself are disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so that the white colored LED may be more accurately controlled in its generated white colored light, which efficiently reduces deficiency, generates natural white colored light and aids in luminous efficiency promotion. In addition to the resonant cavity structure, the light-emitting structure also includes a contact layer, an n-type metal electrode and a p-type metal electrode.

摘要翻译： 公开了一种用于白色发光器件（LED）和LED本身的制造方法和由此制造的发光结构。 白色LED包括谐振腔结构，产生和混合可在谐振腔结构中混合成白色光的光，从而可以在其产生的白色光中更准确地控制白色LED，从而有效地减少缺陷 产生天然白色光，有助于发光效率的提升。 除了谐振腔结构之外，发光结构还包括接触层，n型金属电极和p型金属电极。

公开(公告)号：US20060138449A1

公开(公告)日：2006-06-29

申请号：US11352205

申请日：2006-02-13

申请人： Schang-Jing Hon ,  Jenn-Bin Huang

发明人： Schang-Jing Hon ,  Jenn-Bin Huang

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/105 ,  H01L33/465

摘要： A manufacturing method and a thus produced light-emitting structure for a white colored light-emitting device (LED) and the LED itself are disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so that the white colored LED may be more accurately controlled in its generated white colored light, which efficiently reduces deficiency, generates natural white colored light and aids in luminous efficiency promotion. In addition to the resonant cavity structure, the light-emitting structure also includes a contact layer, an n-type metal electrode and a p-type metal electrode.

摘要翻译： 公开了一种用于白色发光器件（LED）和LED本身的制造方法和由此制造的发光结构。 白色LED包括谐振腔结构，产生和混合可在谐振腔结构中混合成白色光的光，从而可以在其产生的白色光中更准确地控制白色LED，从而有效地减少缺陷 产生天然白色光，有助于发光效率的提升。 除了谐振腔结构之外，发光结构还包括接触层，n型金属电极和p型金属电极。

公开(公告)号：US20050236636A1

公开(公告)日：2005-10-27

申请号：US10829934

申请日：2004-04-23

申请人： Schang-Jing Hon ,  Mu-Jen Lai ,  Chi-Feng Chan ,  Jenn-Bin Huang ,  Chen-Fu Chiang

发明人： Schang-Jing Hon ,  Mu-Jen Lai ,  Chi-Feng Chan ,  Jenn-Bin Huang ,  Chen-Fu Chiang

IPC分类号： H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/00

CPC分类号： H01L33/42 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32

摘要： In a GaN-based light-emitting diode structure, a transparent conductive oxide layer is formed as a window layer on a GaN contact layer having a surface textured layer, and the textured layer acts as an ohmic contact layer with the transparent conductive oxide layer. Therefore, it is possible to reduce effectively the contact resistance and the working voltage, while the optical guiding effect is interrupted by the textured layer, to obtain thereby an enhancement of light extraction efficiency and thus an increase in the external quantum yield.

摘要翻译： 在基于GaN的发光二极管结构中，在具有表面纹理化层的GaN接触层上形成透明导电氧化物层作为窗口层，并且纹理化层用作与透明导电氧化物层的欧姆接触层。 因此，可以有效地降低接触电阻和工作电压，同时导光效应被纹理层中断，从而提高光提取效率，从而提高外部量子产率。

公开(公告)号：US07279347B2

公开(公告)日：2007-10-09

申请号：US10720063

申请日：2003-11-25

申请人： Schang-Jing Hon ,  Jenn-Bin Huang

发明人： Schang-Jing Hon ,  Jenn-Bin Huang

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/105 ,  H01L33/465

摘要： A method for manufacturing a light-emitting structure of a light-emitting device (LED) is disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so that the white colored LED may be more accurately controlled in its generated white colored light, which efficiently reduces deficiency, generates natural white colored light and aids in luminous efficiency promotion. In addition to the resonant cavity structure, the light-emitting structure also includes a contact layer, an n-type metal electrode, and a p-type metal electrode.

摘要翻译： 公开了一种用于制造发光器件（LED）的发光结构的方法。 白色LED包括谐振腔结构，产生和混合可在谐振腔结构中混合成白色光的光，从而可以在其产生的白色光中更准确地控制白色LED，从而有效地减少缺陷 产生天然白色光，有助于发光效率的提升。 除了谐振腔结构之外，发光结构还包括接触层，n型金属电极和p型金属电极。

公开(公告)号：US20060267027A1

公开(公告)日：2006-11-30

申请号：US11485263

申请日：2006-07-13

申请人： Mu-Jen Lai ,  Schang-Jing Hon ,  Jenn-Bin Huang ,  Chi-Feng Chan ,  Hsueh-Feng Sun ,  Shi-Ming Yang

发明人： Mu-Jen Lai ,  Schang-Jing Hon ,  Jenn-Bin Huang ,  Chi-Feng Chan ,  Hsueh-Feng Sun ,  Shi-Ming Yang

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/22 ,  H01L33/32

摘要： A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and /or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.

摘要翻译： 一种具有高光提取效率的发光氮化镓基III-V族化合物半导体器件，其特征在于具有凹和/或凸表面的基底，纹理表面层和透明导电窗层。 因此，工作电压降低，光提取效率提高。

公开(公告)号：US06992331B2

公开(公告)日：2006-01-31

申请号：US10700536

申请日：2003-11-05

申请人： Schang-Jing Hon ,  Jenn-Bin Huang ,  Nai-Guann Yih

发明人： Schang-Jing Hon ,  Jenn-Bin Huang ,  Nai-Guann Yih

IPC分类号： H01L27/15

CPC分类号： H01L33/42 ,  H01L33/22 ,  H01L33/32

摘要： Disclosed are a GaN based compound semiconductor light emitting diode (LED) and a manufacturing method therefor. In the LED, a combination of a light extraction layer and an adaptive layer is formed over a multi-layer epitaxial structure,wherein the light extraction layer is a light transmissible impurity doped metal oxide and the adaptive layer is a Ni/Au layer used to enhance ohmic contact between the light extraction layer and the multi-layer epitaxial structure.

摘要翻译： 公开了一种GaN基化合物半导体发光二极管（LED）及其制造方法。 在LED中，在多层外延结构上形成光提取层和自适应层的组合，其中光提取层是透光的杂质掺杂金属氧化物，并且自适应层是用于 增强光提取层和多层外延结构之间的欧姆接触。

公开(公告)号：US07208752B2

公开(公告)日：2007-04-24

申请号：US10840267

申请日：2004-05-07

申请人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

发明人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L33/32 ,  H01L33/14 ,  Y10S257/918

摘要： A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohmic contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.

摘要翻译： 氮化镓发光二极管的结构具有包括扩散阻挡层，欧姆接触层和窗口层的透明导电窗口层。 通过使用添加的畴接触层，发光二极管的扩散阻挡层和P型半导体层被欧姆接触。 然后，通过施加扩散阻挡层来阻止窗口层与域接触层的接触的扩散，从而降低工作电压并提高透明度，阻止了接触电阻率的上升。

公开(公告)号：US20060244017A1

公开(公告)日：2006-11-02

申请号：US11428405

申请日：2006-07-03

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L29/80 ,  H01L31/112

CPC分类号： H01L33/42 ,  H01L33/32

摘要： A method for fabricating GaN-based LED is provided. The method first forms a first contact spreading metallic layer on top of the texturing surface of the p-type ohmic contact layer. The method then forms a second and a third contact spreading metallic layers on top of the first contact spreading layer. The p-type transparent metallic conductive layer composed of the three contact spreading metallic layers, after undergoing an alloying process within an oxygenic or nitrogenous environment under a high temperature, would have a superior conductivity. The p-type transparent metallic conductive layer could enhance the lateral contact uniformity between the p-type metallic electrode and the p-type ohmic contact layer, so as to avoid the localized light emission resulted from the uneven distribution of the second contact spreading metallic layer within the third contact spreading metallic layer. The GaN-based LED's working voltage and external quantum efficiency are also significantly improved.

摘要翻译： 提供了一种用于制造GaN基LED的方法。 该方法首先在p型欧姆接触层的纹理表面的顶部形成第一接触扩展金属层。 该方法然后在第一接触扩散层的顶部上形成第二和第三接触扩展金属层。 由三层接触扩散金属层构成的p型透明金属导电层，在高温下在含氧或含氮环境中进行合金化处理后，具有优异的导电性。 p型透明金属导电层可以增强p型金属电极和p型欧姆接触层之间的横向接触均匀性，以避免由于第二接触扩散金属层的不均匀分布引起的局部发光 在第三接触扩散金属层内。 GaN基LED的工作电压和外部量子效率也得到显着提高。

公开(公告)号：US06881983B2

公开(公告)日：2005-04-19

申请号：US10207649

申请日：2002-07-26

申请人： Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chia Chen ,  Hong K. Choi ,  John C. C. Fan

发明人： Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chia Chen ,  Hong K. Choi ,  John C. C. Fan

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/10 ,  H01S5/34 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/106 ,  H01S5/3425 ,  H01S5/34333

摘要： An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

公开(公告)号：US06492661B1

公开(公告)日：2002-12-10

申请号：US09434316

申请日：1999-11-04

申请人： Fen-Ren Chien ,  Schang-Jing Hon ,  Mu-Jen Lai

发明人： Fen-Ren Chien ,  Schang-Jing Hon ,  Mu-Jen Lai

IPC分类号： H01L3300

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/145

摘要： A light-emitting device with a reflection layer is disclosed. The reflection layer is formed on a light emitting stack structure. A second substrate is subsequently combined with the reflection layer, and then the original substrate of the stack structure is removed, such that the second substrate becomes the substrate of the device. The reflection layer can effectively reflect the light emitted from the light emitting stack structure and directed to the substrate, and thus can increase the light-emitting efficiency of a surface-emitting type light-emitting device. The invention can also convert a light-emnitting device using an insulated substrate to be the one having vertical type electrode structure so as to effectively reduce the wafer area used for a die and facilitate subsequent wiring and packaging processes using traditional mechanisms.

摘要翻译： 公开了一种具有反射层的发光器件。 反射层形成在发光堆叠结构上。 随后将第二衬底与反射层组合，然后去除堆叠结构的原始衬底，使得第二衬底变成器件的衬底。 反射层可以有效地反射从发光堆叠结构发出的光并被引导到衬底，从而可以提高表面发射型发光器件的发光效率。 本发明还可以将使用绝缘基板的发光装置转换为具有垂直型电极结构的发光装置，以便有效地减少用于晶片的晶片面积，并利用传统的机制促进后续的布线和封装工艺。