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公开(公告)号：US11248976B2
公开(公告)日：2022-02-15
申请号：US16758680
申请日：2018-11-16
Applicant: Sciosense B.V.
Inventor： Willem Frederik Adrianus Besling , Casper Van Der Avoort , Remco Henricus Wilhelmus Pijnenburg , Olaf Wunnicke , Jörg Siegert , Alessandro Faes
Abstract: Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.
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公开(公告)号：US11585711B2
公开(公告)日：2023-02-21
申请号：US16958269
申请日：2019-01-10
Applicant: Sciosense B.V.
Inventor： Willem Frederik Adrianus Besling , Remco Henricus Wilhelmus Pijnenburg , Kailash Vijayakumar , Jörg Siegert , Alessandro Faes
IPC: G01L9/00
Abstract: A capacitive sensor is disclosed. In an embodiment a semiconductor device includes a die including a capacitive pressure sensor integrated on a CMOS circuit, wherein the capacitive pressure sensor includes a first electrode and a second electrode separated from one another by a cavity, the second electrode including a suspended tensile membrane, and wherein the first electrode is composed of one or more aluminum-free layers containing Ti.
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公开(公告)号：US20210359143A1
公开(公告)日：2021-11-18
申请号：US17288847
申请日：2019-10-24
Applicant: Sciosense B.V.
Inventor： Alessandro Faes , Jörg Siegert , Willem Frederik Adrianus Besling , Remco Henricus Wilhelmus Pijnenburg
IPC: H01L29/84 , H01L21/306 , H01L21/768
Abstract: In an embodiment a method includes providing a semiconductor body, forming a sacrificial layer above a surface of the semiconductor body, applying a diaphragm on the sacrificial layer and removing the sacrificial layer by introducing an etchant into openings of the diaphragm, wherein applying the diaphragm comprises applying a first layer, reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and patterning and structuring the first layer to form the openings.
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Patent Agency Ranking
公开(公告)号：US11946822B2
公开(公告)日：2024-04-02
申请号：US17290140
申请日：2019-10-16
Applicant: Sciosense B.V.
Inventor： Alessandro Faes , Jörg Siegert , Willem Frederik Adrianus Besling , Remco Henricus Wilhelmus Pijnenburg
CPC classification number: G01L9/0073 , B81B3/0021 , B81C1/00595 , G01L9/0042 , B81B2201/0264 , B81B2203/0127 , B81B2207/015 , B81C2201/0109 , B81C2201/0133 , B81C2201/014
Abstract: In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.
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公开(公告)号：US20210356342A1
公开(公告)日：2021-11-18
申请号：US17290140
申请日：2019-10-16
Applicant: Sciosense B.V.
Inventor： Alessandro Faes , Jörg Siegert , Willem Frederik Adrianus Besling , Remco Henricus Wilhelmus Pijnenburg
Abstract: In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.
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公开(公告)号：US12191402B2
公开(公告)日：2025-01-07
申请号：US17288847
申请日：2019-10-24
Applicant: Sciosense B.V.
Inventor： Alessandro Faes , Jörg Siegert , Willem Frederik Adrianus Besling , Remco Henricus Wilhelmus Pijnenburg
IPC: H01L29/84 , H01L21/306 , H01L21/768
Abstract: In an embodiment a method includes providing a semiconductor body, forming a sacrificial layer above a surface of the semiconductor body, applying a diaphragm on the sacrificial layer and removing the sacrificial layer by introducing an etchant into openings of the diaphragm, wherein applying the diaphragm comprises applying a first layer, reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and patterning and structuring the first layer to form the openings.
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7.发明申请公开(公告)号：US20200348198A1
公开(公告)日：2020-11-05
申请号：US16758680
申请日：2018-11-16
Applicant: Sciosense B.V.
Inventor： Willem Frederik Adrianus Besling , Casper Van Der Avoort , Remco Henricus Wilhelmus Pijnenburg , Olaf Wunnicke , Jörg Siegert , Alessandro Faes
Abstract: Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.
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公开(公告)号：US20200340875A1
公开(公告)日：2020-10-29
申请号：US16958269
申请日：2019-01-10
Applicant: Sciosense B.V.
Inventor： Willem Frederik Adrianus Besling , Remco Henricus Wilhelmus Pijnenburg , Kailash Vijayakumar , Jörg Siegert , Alessandro Faes
IPC: G01L9/00
Abstract: A capacitive sensor is disclosed. In an embodiment a semiconductor device includes a die including a capacitive pressure sensor integrated on a CMOS circuit, wherein the capacitive pressure sensor includes a first electrode and a second electrode separated from one another by a cavity, the second electrode including a suspended tensile membrane, and wherein the first electrode is composed of one or more aluminum-free layers containing Ti.
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