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公开(公告)号：US20210359143A1
公开(公告)日：2021-11-18
申请号：US17288847
申请日：2019-10-24
Applicant: Sciosense B.V.
Inventor： Alessandro Faes , Jörg Siegert , Willem Frederik Adrianus Besling , Remco Henricus Wilhelmus Pijnenburg
IPC: H01L29/84 , H01L21/306 , H01L21/768
Abstract: In an embodiment a method includes providing a semiconductor body, forming a sacrificial layer above a surface of the semiconductor body, applying a diaphragm on the sacrificial layer and removing the sacrificial layer by introducing an etchant into openings of the diaphragm, wherein applying the diaphragm comprises applying a first layer, reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and patterning and structuring the first layer to form the openings.
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2.发明授权公开(公告)号：US11492251B2
公开(公告)日：2022-11-08
申请号：US17288267
申请日：2019-11-04
Applicant: Sciosense B.V.
Inventor： Kailash Vijayakumar , Remco Henricus Wilhelmus Pijnenburg , Willem Frederik Adrianus Besling , Sophie Guillemin , Jörg Siegert
IPC: B81C1/00
Abstract: In an embodiment, a method for manufacturing a micro-electro-mechanical systems (MEMS) transducer device includes providing a substrate body with a surface, depositing an etch-stop layer (ESL) on the surface, depositing a sacrificial layer on the ESL, depositing a diaphragm layer on the sacrificial layer and removing the sacrificial layer, wherein depositing the sacrificial layer includes depositing a first sub-layer of a first material and depositing a second sub-layer of a second material, and wherein the first material and the second material are different materials.
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公开(公告)号：US20220221363A1
公开(公告)日：2022-07-14
申请号：US17708407
申请日：2022-03-30
Applicant: Sciosense B.V.
Inventor： Jörg Siegert , Willem Frederik Adrianus Besling , Coenraad Cornelis Tak , Martin Schrems , Franz Schrank
Abstract: In an embodiment a method for forming a pressure sensor device includes providing a pressure sensor on a substrate body, the pressure sensor comprising a membrane, depositing a top layer on top of the substrate body and the pressure sensor, connecting a cap body with the top layer, a mass of the cap body being approximately equal to a mass of the substrate body and introducing at least one opening in the cap body.
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公开(公告)号：US11248976B2
公开(公告)日：2022-02-15
申请号：US16758680
申请日：2018-11-16
Applicant: Sciosense B.V.
Inventor： Willem Frederik Adrianus Besling , Casper Van Der Avoort , Remco Henricus Wilhelmus Pijnenburg , Olaf Wunnicke , Jörg Siegert , Alessandro Faes
Abstract: Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.
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公开(公告)号：US11946822B2
公开(公告)日：2024-04-02
申请号：US17290140
申请日：2019-10-16
Applicant: Sciosense B.V.
Inventor： Alessandro Faes , Jörg Siegert , Willem Frederik Adrianus Besling , Remco Henricus Wilhelmus Pijnenburg
CPC classification number: G01L9/0073 , B81B3/0021 , B81C1/00595 , G01L9/0042 , B81B2201/0264 , B81B2203/0127 , B81B2207/015 , B81C2201/0109 , B81C2201/0133 , B81C2201/014
Abstract: In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.
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Patent Agency Ranking
6.发明授权公开(公告)号：US11878906B2
公开(公告)日：2024-01-23
申请号：US17937123
申请日：2022-09-30
Applicant: Sciosense B.V.
Inventor： Kailash Vijayakumar , Remco Henricus Wilhelmus Pijnenburg , Willem Frederik Adrianus Besling , Sophie Guillemin , Jörg Siegert
IPC: B81C1/00
CPC classification number: B81C1/00476 , B81C1/00595 , B81B2201/0257 , B81B2201/0264 , B81C2201/014 , B81C2201/0132 , B81C2201/053
Abstract: In an embodiment, an integrated MEMS transducer device includes a substrate body having a first electrode on a substrate, an etch stop layer located on a surface of the substrate, a suspended micro-electro-mechanical systems (MEMS) diaphragm with a second electrode, an anchor structure with anchors connecting the MEMS diaphragm to the substrate body and a sacrificial layer in between the anchors of the anchor structure, the sacrificial layer including a first sub-layer of a first material, wherein the first sub-layer is arranged on the etch stop layer, a second sub-layer of a second material, wherein the second sub-layer is arranged on the first sub-layer, and wherein the first and the second material are different materials.
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公开(公告)号：US20210356342A1
公开(公告)日：2021-11-18
申请号：US17290140
申请日：2019-10-16
Applicant: Sciosense B.V.
Inventor： Alessandro Faes , Jörg Siegert , Willem Frederik Adrianus Besling , Remco Henricus Wilhelmus Pijnenburg
Abstract: In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.
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公开(公告)号：US12191402B2
公开(公告)日：2025-01-07
申请号：US17288847
申请日：2019-10-24
Applicant: Sciosense B.V.
Inventor： Alessandro Faes , Jörg Siegert , Willem Frederik Adrianus Besling , Remco Henricus Wilhelmus Pijnenburg
IPC: H01L29/84 , H01L21/306 , H01L21/768
Abstract: In an embodiment a method includes providing a semiconductor body, forming a sacrificial layer above a surface of the semiconductor body, applying a diaphragm on the sacrificial layer and removing the sacrificial layer by introducing an etchant into openings of the diaphragm, wherein applying the diaphragm comprises applying a first layer, reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and patterning and structuring the first layer to form the openings.
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9.发明申请公开(公告)号：US20200348198A1
公开(公告)日：2020-11-05
申请号：US16758680
申请日：2018-11-16
Applicant: Sciosense B.V.
Inventor： Willem Frederik Adrianus Besling , Casper Van Der Avoort , Remco Henricus Wilhelmus Pijnenburg , Olaf Wunnicke , Jörg Siegert , Alessandro Faes
Abstract: Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.
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公开(公告)号：US20200340875A1
公开(公告)日：2020-10-29
申请号：US16958269
申请日：2019-01-10
Applicant: Sciosense B.V.
Inventor： Willem Frederik Adrianus Besling , Remco Henricus Wilhelmus Pijnenburg , Kailash Vijayakumar , Jörg Siegert , Alessandro Faes
IPC: G01L9/00
Abstract: A capacitive sensor is disclosed. In an embodiment a semiconductor device includes a die including a capacitive pressure sensor integrated on a CMOS circuit, wherein the capacitive pressure sensor includes a first electrode and a second electrode separated from one another by a cavity, the second electrode including a suspended tensile membrane, and wherein the first electrode is composed of one or more aluminum-free layers containing Ti.
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