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公开(公告)号：US06022598A
公开(公告)日：2000-02-08
申请号：US61624
申请日：1998-04-16
CPC分类号： C23C14/06 , C23C14/221
摘要： A uniform film of sapphire and tungsten is deposited onto a surface of a substrate using the ionized cluster beam ("ICB") apparatus. During ICB deposition, a tungsten crucible containing sapphire is heated until a vapor of sapphire and tungsten is formed. The tungsten crucible is heated to form a tungsten vapor, which causes the crucible material to mix with the sapphire, thereby forming a vapor mixture of sapphire and tungsten. The vapor is ejected through a small nozzle into a vacuum region. The resulting adiabatic expansion of the vapor promotes formation of atomic clusters. Some of the clusters are ionized, and electrons are stripped off the clusters. The clusters are accelerated toward the substrate, which is also within the vacuum region. The clusters impact the surface of the substrate, where they are deposited to form the uniform sapphire/tungsten film. The film is deposited in an sapphire (aluminum oxide)/tungsten ratio of 2:1. The film has a relatively high index of refraction of approximately 2.2, thereby rendering it useful as an optical coating (specifically, an electrochromic material). The film may also be used as a resistive or thermally conductive material.
摘要翻译： 使用电离的簇束（“ICB”）装置将蓝宝石和钨的均匀膜沉积到衬底的表面上。 在ICB沉积期间，加热含有蓝宝石的钨坩埚直到形成蓝宝石和钨的蒸气。 将钨坩埚加热形成钨蒸气，使坩埚材料与蓝宝石混合，从而形成蓝宝石和钨的蒸气混合物。 蒸汽通过小喷嘴喷射到真空区域中。 蒸汽的绝热膨胀促进了原子簇的形成。 一些簇被电离，并且电子从簇上剥离。 簇朝向衬底加速，衬底也在真空区域内。 簇会影响衬底的表面，在其表面沉积以形成均匀的蓝宝石/钨膜。 该薄膜以2:1的蓝宝石（氧化铝）/钨比例沉积。 该膜的折射率相对较高约为2.2，因此可用作光学涂层（特别是电致变色材料）。 该膜还可以用作电阻或导热材料。
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公开(公告)号：US5380683A
公开(公告)日：1995-01-10
申请号：US955603
申请日：1992-10-02
IPC分类号： C30B23/02 , H01L21/316 , H01L21/00 , H01L21/02 , H01L21/302 , H01L21/463
CPC分类号： C30B29/06 , C30B23/02 , C30B29/20 , H01L21/31604
摘要： Sapphire, a highly stable oxide of aluminum having the chemical formula of Al.sub.2 O.sub.3, is placed in a crucible. The crucible is heated to vaporize the sapphire therein. The sapphire vapor is ejected through a nozzle in the crucible and into a region having a vacuum pressure of approximately 10.sup.-5 Torr or less. As the vapor leaves the crucible through the nozzle, atom aggregates or clusters are formed through a supercooled phenomenon due to adiabatic expansion. The vacuum region has disposed therein a substrate of silicon. The sapphire vapor is accelerated towards the substrate where it deposits on a surface of the substrate in a uniformly distributed thin layer.
摘要翻译： 将具有化学式为Al 2 O 3的高度稳定的铝氧化物蓝宝石放置在坩埚中。 将坩埚加热以蒸发其中的蓝宝石。 蓝宝石蒸气通过坩埚中的喷嘴喷射到真空压力为大约10 -5 Torr或更小的区域。 当蒸气通过喷嘴离开坩埚时，由于绝热膨胀，原子聚集体或团簇通过过冷现象形成。 真空区域中设置有硅基片。 蓝宝石蒸气朝向衬底加速，在衬底上沉积在均匀分布的薄层中的衬底的表面上。
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公开(公告)号：US5350607A
公开(公告)日：1994-09-27
申请号：US955607
申请日：1992-10-02
CPC分类号： C23C14/221 , C23C14/08 , C30B23/02 , C30B29/20
摘要： Sapphire, a highly stable oxide of aluminum having the chemical formula of Al.sub.2 O.sub.3, is placed in a crucible. The crucible is heated to vaporize the sapphire therein. The sapphire vapor is ejected through a nozzle in the crucible and into a region having a vacuum pressure of approximately 10.sup.-5 Torr or less. As the vapor leaves the crucible through the nozzle, atom aggregates or clusters are formed through a supercooled phenomenon due to adiabatic expansion. The vacuum region has disposed therein a substrate comprised of one of various materials, including metals, oxides or silicon. The sapphire vapor is accelerated towards the substrate where it deposits on a surface of the substrate in a uniformly distributed thin layer.
摘要翻译： 将具有化学式为Al 2 O 3的高度稳定的铝氧化物蓝宝石放置在坩埚中。 将坩埚加热以蒸发其中的蓝宝石。 蓝宝石蒸气通过坩埚中的喷嘴喷射到真空压力为大约10 -5 Torr或更小的区域。 当蒸气通过喷嘴离开坩埚时，由于绝热膨胀，原子聚集体或团簇通过过冷现象形成。 真空区域设置有由包括金属，氧化物或硅的各种材料中的一种构成的衬底。 蓝宝石蒸气朝向衬底加速，在衬底上沉积在均匀分布的薄层中的衬底的表面上。
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公开(公告)号：US4703557A
公开(公告)日：1987-11-03
申请号：US916414
申请日：1986-10-07
IPC分类号： H01C17/232 , H01C17/26 , H01C17/06
CPC分类号： H01C17/232 , H01C17/265 , Y10T29/49099
摘要： The adjustment of the temperature coefficient of resistance (TCR) of a thick film resistor by laser annealing is disclosed. The thick film resistor is fired for a controlled time and temperature sufficient to burn off the organic material in the resistive paint, and to provide an initial adjustment of the (TCR), but prior to obtaining the desired (TCR) range. The resistor is then laser annealed to controllably adjust the (TCR) of the resistor within the desired (TCR) range. The fixture used to hold the substrate during laser annealing is preferably controllably heated to avoid thermal shock to the resistor during laser annealing. A microprocessor is preferably used to monitor the (TCR) during the laser annealing process. At least one of the laser scan speed, laser beam diameter, laser beam power, and number of annealing passes are used to controllably adjust the resistor (TCR) to within the desired (TCR) range.
摘要翻译： 公开了通过激光退火调整厚膜电阻器的电阻温度系数（TCR）。 烧制厚膜电阻器的时间和温度足以烧掉电阻涂料中的有机材料，并提供（TCR）的初始调整，但在获得所需的（TCR）范围之前。 然后对电阻器进行激光退火，以可控制地将电阻器的（TCR）调节到期望的（TCR）范围内。 用于在激光退火期间保持基板的固定装置优选地被可控地加热以避免在激光退火期间对电阻器的热冲击。 优选使用微处理器来监测激光退火过程中的（TCR）。 使用激光扫描速度，激光束直径，激光束功率和退火次数中的至少一个来可控地将电阻器（TCR）调节到期望的（TCR）范围内。
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