公开(公告)号：US20130181306A1

公开(公告)日：2013-07-18

申请号：US13784230

申请日：2013-03-04

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08

Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

Abstract translation: 一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。 在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。 具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。 具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。 此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

公开(公告)号：US08908429B2

公开(公告)日：2014-12-09

申请号：US13784230

申请日：2013-03-04

Applicant: Seagate Technology LLC

Inventor： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08

Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

Abstract translation: 一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。 在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。 具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。 具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。 此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。