公开(公告)号：US08670271B2

公开(公告)日：2014-03-11

申请号：US13857410

申请日：2013-04-05

Applicant: Seagate Technology LLC

Inventor： Yuankai Zheng ,  Zheng Gao ,  Wonjoon Jung ,  Xuebing Feng ,  Xiaohua Lou ,  Haiwen Xi

IPC: G11C11/15

CPC classification number: H01L43/02 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/08

Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.

Abstract translation: 具有铁磁自由层和铁磁性固定参考层的磁性隧道结，每个具有面外磁各向异性和面外磁化取向，所述铁磁自由层可通过自旋扭矩切换。 磁性隧道结包括邻近自由层的铁磁性辅助层，辅助层具有小于700Oe的低磁各向异性，并定位成在自由层上施加磁场。

公开(公告)号：US20130228884A1

公开(公告)日：2013-09-05

申请号：US13857410

申请日：2013-04-05

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Yuankai Zheng ,  Zheng Gao ,  Wonjoon Jung ,  Xuebing Feng ,  Xiaohue Lou ,  Haiwen Xi

IPC: H01L43/02

CPC classification number: H01L43/02 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/08

Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.

Abstract translation: 具有铁磁自由层和铁磁性固定参考层的磁性隧道结，每个具有面外磁各向异性和面外磁化取向，所述铁磁自由层可通过自旋扭矩切换。 磁性隧道结包括邻近自由层的铁磁性辅助层，辅助层具有小于700Oe的低磁各向异性，并定位成在自由层上施加磁场。