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公开(公告)号：US20140015075A1
公开(公告)日：2014-01-16
申请号：US13966361
申请日：2013-08-14
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yong Lu , Hongyue Liu , Zheng Gao , Insik Jin , Dimitar V. Dimitrov
IPC: H01L43/02
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
Abstract: Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.
Abstract translation: 公开了具有分离的读和写路径的磁存储器。 磁存储器单元包括具有第一磁化取向的第一端部，具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条，所述中间部分具有 自由磁化方向。 第一磁化取向与第二磁化取向相反。 隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。 位线电耦合到第二端部。 源极线电耦合到第一端部，并且读取线电耦合到磁性隧道结。
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公开(公告)号：US08860157B2
公开(公告)日：2014-10-14
申请号：US13829137
申请日：2013-03-14
Applicant: Seagate Technology LLC
Inventor： Yuankai Zheng , Xiaohua Lou , Wei Tian , Zheng Gao , Haiwen Xi
CPC classification number: H01L43/02 , B82Y40/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/30 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.
Abstract translation: 一种具有声阻隔绝缘层的非易失性存储单元的装置和相关方法。 根据各种实施例，磁性堆叠具有隧道结，铁磁自由层，被钉扎层和由电绝缘材料和热绝缘材料构成的绝缘层，其阻挡声子同时允许通过至少一个导电特征的电传输。
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公开(公告)号：US20130228884A1
公开(公告)日：2013-09-05
申请号：US13857410
申请日：2013-04-05
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohue Lou , Haiwen Xi
IPC: H01L43/02
CPC classification number: H01L43/02 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01L43/08
Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.
Abstract translation: 具有铁磁自由层和铁磁性固定参考层的磁性隧道结，每个具有面外磁各向异性和面外磁化取向，所述铁磁自由层可通过自旋扭矩切换。 磁性隧道结包括邻近自由层的铁磁性辅助层，辅助层具有小于700Oe的低磁各向异性，并定位成在自由层上施加磁场。
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Patent Agency Ranking
公开(公告)号：US10054649B2
公开(公告)日：2018-08-21
申请号：US15238354
申请日：2016-08-16
Applicant: Seagate Technology, LLC
Inventor： Eric W. Singleton , Qing He , Jae-Young Yi , Matt Johnson , Zheng Gao , Dimitar V. Dimitrov , Song S. Xue
CPC classification number: G01R33/0052 , B82Y25/00 , G01R33/0076 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/398
Abstract: A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.
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公开(公告)号：US08681541B2
公开(公告)日：2014-03-25
申请号：US13966361
申请日：2013-08-14
Applicant: Seagate Technology LLC
Inventor： Yong Lu , Hongyue Liu , Zheng Gao , Insik Jin , Dimitar V. Dimitrov
IPC: G11C11/14
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
Abstract: Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.
Abstract translation: 公开了具有分离的读和写路径的磁存储器。 磁存储器单元包括具有第一磁化取向的第一端部，具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条，所述中间部分具有 自由磁化方向。 第一磁化取向与第二磁化取向相反。 隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。 位线电耦合到第二端部。 源极线电耦合到第一端部，并且读取线电耦合到磁性隧道结。
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公开(公告)号：US08670271B2
公开(公告)日：2014-03-11
申请号：US13857410
申请日：2013-04-05
Applicant: Seagate Technology LLC
Inventor： Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Haiwen Xi
IPC: G11C11/15
CPC classification number: H01L43/02 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01L43/08
Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.
Abstract translation: 具有铁磁自由层和铁磁性固定参考层的磁性隧道结，每个具有面外磁各向异性和面外磁化取向，所述铁磁自由层可通过自旋扭矩切换。 磁性隧道结包括邻近自由层的铁磁性辅助层，辅助层具有小于700Oe的低磁各向异性，并定位成在自由层上施加磁场。
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公开(公告)号：US20130200476A1
公开(公告)日：2013-08-08
申请号：US13829137
申请日：2013-03-14
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yuankai Zheng , Xiaohua Lou , Wei Tian , Zheng Gao , Haiwen Xi
IPC: H01L43/02
CPC classification number: H01L43/02 , B82Y40/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/30 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.
Abstract translation: 一种具有声阻隔绝缘层的非易失性存储单元的装置和相关方法。 根据各种实施例，磁性堆叠具有隧道结，铁磁自由层，被钉扎层和由电绝缘材料和热绝缘材料构成的绝缘层，其阻挡声子同时允许通过至少一个导电特征的电传输。
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公开(公告)号：US20160356861A1
公开(公告)日：2016-12-08
申请号：US15238354
申请日：2016-08-16
Applicant: Seagate Technology, LLC
Inventor： Eric W. Singleton , Qing He , Jae-Young Yi , Matt Johnson , Zheng Gao , Dimitar V. Dimitrov , Song S. Xue
CPC classification number: G01R33/0052 , B82Y25/00 , G01R33/0076 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/398
Abstract: A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap :layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.
Abstract translation: 磁传感器组件包括由磁性材料构成的第一和第二屏蔽件。 第一和第二屏蔽层定义物理屏蔽间隔。 传感器堆叠设置在第一和第二屏蔽之间，并且包括邻近第一屏蔽的种子层，与第二屏蔽相邻的盖：层和种子层与盖层之间的磁传感器。 种子层和/或盖层的至少一部分包括磁性材料，以提供小于物理屏蔽 - 屏蔽间隔的磁性传感器组件的有效的屏蔽到屏蔽间隔。
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