公开(公告)号：US11423928B1

公开(公告)日：2022-08-23

申请号：US16252167

申请日：2019-01-18

Applicant: Seagate Technology LLC

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  G11B5/105 ,  G11B5/84 ,  G11B5/127 ,  G11B7/124 ,  C30B25/04 ,  H01L33/00 ,  G11B5/60 ,  G11B5/00

Abstract: A method includes forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a sacrificial wafer. An anchor layer is formed on the single-crystal-like metal layer. The single-crystal-like metal layer is separated from the sacrificial wafer via the anchor layer. The single-crystal-like metal layer is transported via the anchor layer to a target substrate having one or more recording head subassemblies. The single-crystal-like metal layer is joined with the recording head, the single-crystal-like metal layer being integrated with the recording head as a near-field transducer.

公开(公告)号：US12249357B2

公开(公告)日：2025-03-11

申请号：US18410008

申请日：2024-01-11

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  C30B25/04 ,  G11B5/105 ,  G11B5/127 ,  G11B5/84 ,  G11B7/124 ,  H01L33/00 ,  G11B5/00 ,  G11B5/60

Abstract: A method involves forming a metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. A surface of the metal layer defines a first metal bonding layer. A second metal bonding layer is provided on a target substrate having recording head subassemblies. Mating surfaces of the first and second metal bonding layers are activated and the carrier wafer is flipped and joined with the target substrate such that the first and second metal bonding layers are bonded and the metal layer is integrated with the recording head as a near-field transducer.

公开(公告)号：US11935567B2

公开(公告)日：2024-03-19

申请号：US17877434

申请日：2022-07-29

Applicant: Seagate Technology LLC.

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  C30B25/04 ,  G11B5/105 ,  G11B5/127 ,  G11B5/84 ,  G11B7/124 ,  H01L33/00 ,  G11B5/00 ,  G11B5/60

CPC classification number: G11B5/314 ,  C30B25/04 ,  G11B5/105 ,  G11B5/1272 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/84 ,  G11B7/124 ,  H01L33/0093 ,  G11B2005/0021 ,  G11B5/6088

Abstract: A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

公开(公告)号：US20240185882A1

公开(公告)日：2024-06-06

申请号：US18410008

申请日：2024-01-11

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  C30B25/04 ,  G11B5/00 ,  G11B5/105 ,  G11B5/127 ,  G11B5/60 ,  G11B5/84 ,  G11B7/124 ,  H01L33/00

CPC classification number: G11B5/314 ,  C30B25/04 ,  G11B5/105 ,  G11B5/1272 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/84 ,  G11B7/124 ,  H01L33/0093 ,  G11B2005/0021 ,  G11B5/6088

Abstract: A method involves forming a metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. A surface of the metal layer defines a first metal bonding layer. A second metal bonding layer is provided on a target substrate having recording head subassemblies. Mating surfaces of the first and second metal bonding layers are activated and the carrier wafer is flipped and joined with the target substrate such that the first and second metal bonding layers are bonded and the metal layer is integrated with the recording head as a near-field transducer.

公开(公告)号：US20220366934A1

公开(公告)日：2022-11-17

申请号：US17877434

申请日：2022-07-29

Applicant: Seagate Technology LLC.

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  H01L33/00 ,  C30B25/04 ,  G11B5/105 ,  G11B5/127 ,  G11B7/124 ,  G11B5/84

Abstract: A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.