公开(公告)号：US11587581B1

公开(公告)日：2023-02-21

申请号：US16263308

申请日：2019-01-31

Applicant: Seagate Technology LLC

Inventor： Mark Gubbins ,  Roger L. Hipwell, Jr. ,  Marcus B. Mooney ,  Mark Ostrowski ,  Tong Zhao ,  Michael J. Hardy ,  Michael Christopher Kautzky ,  Neil Zuckerman ,  Declan Macken ,  Francis A. McGinnity

IPC: G11B5/127 ,  G11B3/10 ,  G11B5/31 ,  G11B11/105 ,  G11B5/00

Abstract: A near-field transducer or heat sink is formed via a first process. The near-field transducer or heat sink is transfer-printed to a read/write head via a second process.

公开(公告)号：US11423928B1

公开(公告)日：2022-08-23

申请号：US16252167

申请日：2019-01-18

Applicant: Seagate Technology LLC

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  G11B5/105 ,  G11B5/84 ,  G11B5/127 ,  G11B7/124 ,  C30B25/04 ,  H01L33/00 ,  G11B5/60 ,  G11B5/00

Abstract: A method includes forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a sacrificial wafer. An anchor layer is formed on the single-crystal-like metal layer. The single-crystal-like metal layer is separated from the sacrificial wafer via the anchor layer. The single-crystal-like metal layer is transported via the anchor layer to a target substrate having one or more recording head subassemblies. The single-crystal-like metal layer is joined with the recording head, the single-crystal-like metal layer being integrated with the recording head as a near-field transducer.

公开(公告)号：US11183215B1

公开(公告)日：2021-11-23

申请号：US16524551

申请日：2019-07-29

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  Li Wan ,  Michael Christopher Kautzky

IPC: G11B5/31 ,  G11B5/73 ,  H01F10/30 ,  G11B5/66 ,  B32B7/022 ,  B82B1/00 ,  B82Y10/00

Abstract: A thin film structure (e.g., a near-field transducer), includes a first surface parallel to a substrate on which the thin film structure is deposited and two other surfaces orthogonal to the first surface. The first surface and the two other surfaces have respective first, second, and third selected plane orientations with respective first, second, and third atomic packing factors. The first, second, and third selected plane orientations are selected to maximize an average of the first, second, and third atomic packing factors.

公开(公告)号：US09251830B1

公开(公告)日：2016-02-02

申请号：US14716517

申请日：2015-05-19

Applicant: Seagate Technology LLC

Inventor： John Charles Duda ,  Seung-Yeul Yang ,  Manuel Charles Anaya-Dufresne ,  Scott Franzen ,  Michael Christopher Kautzky ,  Xiaoyue Huang

IPC: G11B11/00 ,  G11B5/60 ,  G11B5/48 ,  G11B13/08 ,  G11B5/31 ,  G11B7/1387 ,  G11B5/00 ,  G11B7/1384

CPC classification number: G11B5/6088 ,  G11B5/3133 ,  G11B5/314 ,  G11B7/1384 ,  G11B7/1387 ,  G11B13/08 ,  G11B2005/0021

Abstract: An apparatus comprises a slider of a magnetic recording head having an air bearing surface (ABS), a write pole terminating at or near the ABS, and a near-field transducer (NFT) adjacent the write pole. A light delivery arrangement extends through the slider and terminates at the ABS. The light delivery arrangement is configured to communicate light through the slider and to the NFT. A transparent heat sink layer abuts a terminal end portion of the light delivery arrangement and terminates at the ABS. The heat sink layer has a thermal conductivity greater than that of the light delivery arrangement.

Abstract translation: 一种装置包括具有空气轴承表面（ABS）的磁记录头的滑块，在ABS附近或其附近终止的写极以及与写极相邻的近场换能器（NFT）。 光输送装置延伸穿过滑块并终止于ABS。 光输送装置被配置为通过滑块和NFT传送光。 透明散热层邻接光输送装置的终端部分并终止于ABS。 散热层的导热率大于光输送装置的导热率。

公开(公告)号：US20150255097A1

公开(公告)日：2015-09-10

申请号：US14720162

申请日：2015-05-22

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  John C. Duda ,  Michael Christopher Kautzky

IPC: G11B5/48

CPC classification number: G11B5/4866 ,  G11B5/127 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/1871 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B13/08 ,  G11B2005/0021 ,  Y10T29/49025 ,  Y10T29/49032

Abstract: Apparatuses, systems, and methods are disclosed related to heat assisted magnetic recording. According to one embodiment, an apparatus that includes a heat sink region and a near field transducer region is disclosed. The near field transducer region is thermally coupled to the heat sink region. At least one of the heat sink region and the near field transducer region includes both an inner core and an outer shell. The inner core can be comprised of a non-plasmonic material and the outer shell can be comprised of a plasmonic material. In further embodiments, the inner core is comprised of a material having a relatively higher electron-phonon coupling constant and the outer shell is comprised of a material having a relatively lower electron-phonon coupling constant.

Abstract translation: 公开了与热辅助磁记录相关的装置，系统和方法。 根据一个实施例，公开了一种包括散热片区域和近场换能器区域的装置。 近场换能器区域热耦合到散热片区域。 散热片区域和近场传感器区域中的至少一个包括内核和外壳两者。 内核可以由非等离子体激元材料组成，外壳可以由等离子体激元材料构成。 在另外的实施例中，内芯由具有相对较高的电子 - 声子耦合常数的材料构成，并且外壳由具有较低电子 - 声子耦合常数的材料组成。

公开(公告)号：US20150146508A1

公开(公告)日：2015-05-28

申请号：US14607248

申请日：2015-01-28

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Tong Zhao ,  Michael Christopher Kautzky ,  Michael Allen Seigler ,  Yongjun Zhao ,  Jay Jayashankar ,  Xiaoyue Huang

IPC: G11B5/31

CPC classification number: G11B5/314 ,  G11B5/6088 ,  G11B11/10536 ,  G11B2005/0021 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/1193

Abstract: A device that includes a near field transducer (NFT); at least one cladding layer adjacent the NFT; and a discontinuous metal layer positioned between the NFT and the at least one cladding layer.

Abstract translation: 包括近场换能器（NFT）的装置; 邻近NFT的至少一个覆层; 以及位于所述NFT和所述至少一个包覆层之间的不连续金属层。

公开(公告)号：US08937790B2

公开(公告)日：2015-01-20

申请号：US13914379

申请日：2013-06-10

Applicant: Seagate Technology LLC

Inventor： Michael Christopher Kautzky ,  Charles Everett Hawkinson ,  Daniel Paul Burbank ,  John Stuart Wright

IPC: G11B5/60

CPC classification number: H02H3/08 ,  G11B5/4826 ,  G11B5/4873 ,  G11B5/6005 ,  H01L41/1132 ,  H01L41/257 ,  H01L41/338 ,  Y10T29/42

Abstract: A system for poling piezoelectric devices comprises a plurality of thin-film components, a plurality of piezoelectric devices, a poling pad for poling the piezoelectric devices, a plurality of traces, and a plurality of current-limiting elements. The thin-film components are separated by dice lanes to form an array, and the piezoelectric devices are formed on the thin-film components. The traces connect the piezoelectric devices across the dice lanes in parallel to the poling pad. Each current-limiting element is connected in series with one of the piezoelectric devices, in order to limit current to individual piezoelectric devices that experience current-related failure.

Abstract translation: 用于极化压电装置的系统包括多个薄膜部件，多个压电装置，用于极化压电装置的极化垫，多个迹线和多个限流元件。 薄膜部件通过骰子线分隔开形成阵列，并且压电元件形成在薄膜部件上。 迹线将压电元件跨过骰子通道平行于极化垫。 每个限流元件与压电器件之一串联连接，以便将电流限制到经历电流相关故障的各个压电器件。

公开(公告)号：US08917484B2

公开(公告)日：2014-12-23

申请号：US13797208

申请日：2013-03-12

Applicant: Seagate Technology LLC

Inventor： Jie Gong ,  Ibro Tabakovic ,  Steve Riemer ,  Michael Christopher Kautzky

IPC: G11B5/39 ,  G11B5/127 ,  G11B11/00 ,  G11B5/11

CPC classification number: G11B5/112 ,  G01R33/0076 ,  G01R33/025 ,  G01R33/093 ,  G11B5/3912

Abstract: A magnetoresistive data writer and reader may be generally configured at least with a magnetoresistive (MR) element contacting a magnetic shield that is constructed of (Ni78Fe22)99.8O0.2 material. The magnetic shield may be formed with an electrodeposition process that uses β-diketones derivatives to form nano-crystalline grain structure after a subsequent annealing at temperatures above 400° C.

Abstract translation: 磁阻数据写入器和读取器通常可以至少配置与由（Ni78Fe22）99.8O0.2材料构成的磁屏蔽接触的磁阻（MR）元件。 磁屏蔽可以用电沉积方法形成，其中使用＆bgr-二酮衍生物在温度高于400℃后进行退火后形成纳米晶粒结构。

公开(公告)号：US08885448B2

公开(公告)日：2014-11-11

申请号：US13788860

申请日：2013-03-07

Applicant: Seagate Technology LLC

Inventor： Seung-Yeul Yang ,  Xiaoyue Huang ,  Michael Christopher Kautzky

IPC: G11B11/00 ,  G11B13/04

CPC classification number: G11B5/6088 ,  G11B5/105 ,  G11B2005/0021 ,  Y10T29/49032

Abstract: A magnetic write head is disclosed that includes a slider that includes a laser diode having a light-emitting edge or surface of a laser diode and an optical waveguide. The disclosed magnetic write head also includes a dielectric layer disposed in a gap between the laser diode and an input to the optical waveguide. The dielectric layer fills the gap completely and provides a low-loss optical pathway for the laser diode to the input of the optical waveguide. Also disclosed is a method that includes spinning on a dielectric in a gap between the light-emitting surface and the optical waveguide coupler, wherein after the spinning on, the laser diode is optically coupled to the optical waveguide coupler through the dielectric.

Abstract translation: 公开了一种包括具有激光二极管的激光二极管的滑块，该激光二极管具有激光二极管的发光边缘或表面以及光波导。 所公开的磁写头还包括设置在激光二极管与光波导的输入之间的间隙中的电介质层。 电介质层完全填充间隙，并为激光二极管提供低损耗的光路，使其成为光波导的输入。 还公开了一种方法，其包括在发光表面和光波导耦合器之间的间隙中的电介质上旋转，其中在旋转之后，激光二极管通过电介质光耦合到光波导耦合器。

公开(公告)号：US08842391B2

公开(公告)日：2014-09-23

申请号：US14062675

申请日：2013-10-24

Applicant: Seagate Technology LLC

Inventor： Jie Zou ,  Kaizhong Gao ,  William Albert Challener ,  Mark Henry Ostrowski ,  Venkateswara Rao Inturi ,  Tong Zhao ,  Michael Christopher Kautzky

IPC: G11B5/02

CPC classification number: G11B11/10534 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3136 ,  G11B5/314 ,  G11B2005/0021

Abstract: An apparatus including a near field transducer positioned adjacent to an air bearing surface, the near field transducer including an electrically conductive nitride; a first magnetic pole; and a heat sink, a diffusion barrier layer, or both positioned between the first magnetic pole and the near field transducer, wherein the heat sink, the diffusion barrier or both include rhodium (Rh) or an alloy thereof; ruthenium (Ru) or an alloy thereof titanium (Ti) or an alloy thereof tantalum (Ta) or an alloy thereof tungsten (W) or an alloy thereof borides; nitrides; transition metal oxides; or palladium (Pd) or an alloy thereof.

Abstract translation: 一种包括邻近空气轴承表面定位的近场换能器的装置，所述近场换能器包括导电氮化物; 第一个磁极; 以及位于第一磁极和近场换能器之间的散热器，扩散阻挡层或两者，其中散热器，扩散阻挡层或二者均包括铑（Rh）或其合金; 钌（Ru）或其合金钛（Ti）或其合金钽（Ta）或其合金钨（W）或其合金硼化物; 氮化物 过渡金属氧化物; 或钯（Pd）或其合金。