Sulfonium salt-containing polymer, resist composition, and patterning process
    8.
    发明授权
    Sulfonium salt-containing polymer, resist composition, and patterning process 有权
    含锍盐的聚合物,抗蚀剂组合物和图案化工艺

    公开(公告)号:US08039198B2

    公开(公告)日:2011-10-18

    申请号:US12404245

    申请日:2009-03-13

    IPC分类号: G03F7/004 G03F7/30

    摘要: A polymer comprising recurring units of a sulfonium salt represented by formula (1) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, methyl or trifluoromethyl, R2 to R4 are C1-C10 alkyl or alkoxy, R5 is C1-C30 alkyl or C6-C14 aryl, k, m and n are 0 to 3. The recurring units generate a sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition. The resist composition exhibits excellent resolution and a pattern finish with minimal LER.

    摘要翻译: 提供了包含由式(1)表示的锍盐的重复单元的聚合物以及包含该聚合物的化学放大抗蚀剂组合物。 R 1是H,F,甲基或三氟甲基,R 2至R 4是C 1 -C 10烷基或烷氧基,R 5是C 1 -C 30烷基或C 6 -C 14芳基,k,m和n是0至3.重复单元产生磺酸 暴露于高能量辐射下,以促进抗蚀剂组合物中酸不稳定基团的有效断裂。 抗蚀剂组合物以最小的LER显示出优异的分辨率和图案光洁度。

    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    9.
    发明申请
    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    含硫酸钠聚合物,耐腐蚀组合物和图案处理

    公开(公告)号:US20090233223A1

    公开(公告)日:2009-09-17

    申请号:US12404245

    申请日:2009-03-13

    IPC分类号: G03F7/20 C08F214/18 G03F7/004

    摘要: A polymer comprising recurring units of a sulfonium salt represented by formula (1) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, methyl or trifluoromethyl, R2 to R4 are C1-C10 alkyl or alkoxy, R5 is C1-C30 alkyl or C6-C14 aryl, k, m and n are 0 to 3. The recurring units generate a sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition. The resist composition exhibits excellent resolution and a pattern finish with minimal LER.

    摘要翻译: 提供了包含由式(1)表示的锍盐的重复单元的聚合物以及包含该聚合物的化学放大抗蚀剂组合物。 R 1是H,F,甲基或三氟甲基,R 2至R 4是C 1 -C 10烷基或烷氧基,R 5是C 1 -C 30烷基或C 6 -C 14芳基,k,m和n是0至3.重复单元产生磺酸 暴露于高能量辐射下,以促进抗蚀剂组合物中酸不稳定基团的有效断裂。 抗蚀剂组合物以最小的LER显示出优异的分辨率和图案光洁度。