公开(公告)号：US07212469B2

公开(公告)日：2007-05-01

申请号：US10702381

申请日：2003-11-05

申请人： Seiji Hirade ,  Ryohsuke Ohtani ,  Yoshiki Kasahara

发明人： Seiji Hirade ,  Ryohsuke Ohtani ,  Yoshiki Kasahara

IPC分类号： H04B1/20

CPC分类号： G10H1/0041 ,  G10H2240/061 ,  G10H2240/285 ,  G11B27/036

摘要： There is provided a mixing recorder which enables the user to readily produce music using overdubbing and/or other recording techniques while suppressing degradation of sound quality to the minimum and enables the user to easily find out his/her desired mixing result from a large number of mixing results obtained in the process of mixing. An audio signal is input, and a source file is read out from a memory card and an audio signal is reproduced based on the source file. The input audio signal and the reproduced audio signal are mixed into a mixed signal, which is then stored as a new source file in the memory card. The source file stored in advance in the memory card is backed up before the new source file is stored in the memory card, and in the back-up, the source file is automatically backed up by generating a file given a new name associated with a name of a source file to be backed up and having the same contents as the contents of the source file.

摘要翻译： 提供了一种混合记录器，其使得用户能够使用超频和/或其他记录技术容易地产生音乐，同时将声音质量的降低降至最低，并且使得用户能够从大量的音频信号中容易地找到他/她期望的混合结果 在混合过程中得到的混合结果。 输入音频信号，并且从存储卡读出源文件，并且基于源文件再现音频信号。 输入音频信号和再现的音频信号被混合成混合信号，然后将其作为新的源文件存储在存储卡中。 预先存储在存储卡中的源文件在新的源文件存储在存储卡中之前被备份，并且在备份中，通过生成给定与新的名称相关联的新名称的文件来自动备份源文件 要备份并具有与源文件内容相同内容的源文件的名称。

公开(公告)号：US5858868A

公开(公告)日：1999-01-12

申请号：US631036

申请日：1997-04-15

申请人： Seiji Hirade

发明人： Seiji Hirade

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/28512 ,  H01L21/76838

摘要： Regions of n.sup.+ - and p.sup.+ -types of a semiconductor device are interconnected with a laminated wiring having a low wiring resistance. On the surface of a semiconductor substrate (10), an insulating film (20) is formed covering a field insulating film (12). Contact holes for the n.sup.+ - and p.sup.+ -type regions are formed in the insulating film (20) at areas corresponding to the n.sup.+ - and p.sup.+ -type regions. Thereafter, a refractory metal layer (30A) such as Ti for forming an ohmic contact having a thickness of 100 angstroms or less, an impurity diffusion preventing conductive layer (32A) such as TiN layer, and a refractory metal layer or refractory metal silicide layer (34A) such as W or WSi layer, are formed sequentially in this order from the bottom. A laminated structure of these layers (30A, 32A, 34A) is patterned to form a wiring layer (36). The laminate is subjected to rapid thermal annealing for ohmically contacting the laminate to the n.sup.+ and p.sup.+ -type regions.

摘要翻译： 半导体器件的n +和p +型区域与具有低布线电阻的层叠布线互连。 在半导体衬底（10）的表面上形成覆盖场绝缘膜（12）的绝缘膜（20）。 在n +和p +型区域的对应的区域，在绝缘膜（20）中形成n +和p +型区域的接触孔。 此后，形成诸如Ti的难熔金属层（30A），用于形成厚度为100埃的欧姆接触，诸如TiN层的杂质扩散防止导电层（32A），难熔金属层或难熔金属硅化物层 （34A）例如W或WSi层，从底部依次顺序地形成。 对这些层（30A，32A，34A）的叠层结构进行构图以形成布线层（36）。 对层压体进行快速热退火，以使其与n +和p +型区域的欧姆接触。

公开(公告)号：US5457070A

公开(公告)日：1995-10-10

申请号：US157635

申请日：1993-11-24

申请人： Seiji Hirade

发明人： Seiji Hirade

IPC分类号： H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/336 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L29/78 ,  H01L21/44 ,  H01L21/48

CPC分类号： H01L29/6659 ,  H01L21/76802 ,  H01L23/5283 ,  H01L29/41783 ,  H01L2924/0002

摘要： A field insulating film and a gate insulating film are formed on the surface of a semiconductor substrate, and thereafter contact holes for a source and drain are formed in the gate insulating film. Polycrystalline Si containing impurities are deposited on the substrate and patterned to form source, gate, and drain electrode layers. The source and drain regions are formed by implanting impurity ions and doping the impurities in the source and drain electrode layers to the substrate surface. An interlayer insulating film having a flat surface is thereafter formed on the substrate, and contact holes are formed in the interlayer insulating film by selective etching. The etching depths of the contact holes are generally the same, preventing an excessive etching of the contact hole for the gate electrode.

摘要翻译： 在半导体衬底的表面上形成场绝缘膜和栅极绝缘膜，然后在栅极绝缘膜中形成用于源极和漏极的接触孔。 含有杂质的多晶硅沉积在衬底上并图案化以形成源极，栅极和漏极电极层。 通过注入杂质离子并将源极和漏极电极层中的杂质掺杂到衬底表面来形成源极和漏极区域。 然后在基板上形成具有平坦表面的层间绝缘膜，并且通过选择性蚀刻在层间绝缘膜中形成接触孔。 接触孔的蚀刻深度通常相同，防止对栅电极的接触孔的过度蚀刻。

公开(公告)号：US08126167B2

公开(公告)日：2012-02-28

申请号：US11691943

申请日：2007-03-27

申请人： Seiji Hirade ,  Tamito Suzuki ,  Yukitoshi Suzuki ,  Masayoshi Omura ,  Yuusaku Ebihara

发明人： Seiji Hirade ,  Tamito Suzuki ,  Yukitoshi Suzuki ,  Masayoshi Omura ,  Yuusaku Ebihara

IPC分类号： H04R25/00

CPC分类号： H04R19/04 ,  H04R19/005 ,  H04R31/00

摘要： The present invention provides a condenser microphone, in which, with a simple manufacturing process, vibration characteristics of a diaphragm are improved, and a parasitic capacitance occurring between the diaphragm and a back plate is reduced, thus improving sensitivity. Specifically, the diaphragm having a gear-like shape including a center portion and a plurality of arms and the back plate having a gear-like shape including a center portion and a plurality of arms are positioned opposite to each other above a substrate, wherein the arms of the diaphragm and the arms of the back plate are not positioned opposite to each other. Alternatively, it is possible to independently support the diaphragm and the back plate above the substrate. Furthermore, it is possible to support the back plate above the substrate by means of a plurality of supports inserted into a plurality of holes formed in the center portion of the diaphragm.

摘要翻译： 本发明提供了一种电容麦克风，其中通过简单的制造工艺，提高了隔膜的振动特性，并且减小了在隔膜和背板之间产生的寄生电容，从而提高了灵敏度。 具体而言，具有中央部和多个臂的齿轮状的隔膜和具有中心部和多个臂的齿轮状的背板位于基板的上方相对的位置， 隔膜的臂和背板的臂不彼此相对定位。 或者，可以独立地支撑基板上方的隔膜和背板。 此外，可以通过插入形成在隔膜的中心部分中的多个孔中的多个支撑件来将基板支撑在基板上。

公开(公告)号：US07119267B2

公开(公告)日：2006-10-10

申请号：US10170973

申请日：2002-06-13

申请人： Seiji Hirade ,  Ryohsuke Ohtani

发明人： Seiji Hirade ,  Ryohsuke Ohtani

IPC分类号： H04B1/00

CPC分类号： G10H7/02 ,  G10H1/08 ,  G10H2240/061 ,  G10H2240/165 ,  G10H2240/285

摘要： There is provided a portable mixing recorder which enables a user to readily produce music using overdubbing and/or other recording techniques while suppressing degradation of sound quality to the minimum without excessive concern for space restriction. An input analog audio signal is converted to a digital audio signal by an A/D converter section. A decoder reads out a compressed audio signal from an original source file stored in a memory card, and then extends the compressed audio signal to a digital audio signal. A mixing section mixes the digital audio signal obtained by the A/D conversion by the A/D converter section and the digital audio signal obtained by the extension by the decoder. An encoder compresses the digital audio signal obtained by the mixing by the mixing section to a compressed audio signal (mixed file). The mixed file obtained by the compression by the encoder is stored as a new source file in the memory card.

公开(公告)号：US07075123B2

公开(公告)日：2006-07-11

申请号：US10968685

申请日：2004-10-19

申请人： Nobuaki Tsuji ,  Masao Noro ,  Terumitsu Maeno ,  Seiji Hirade

发明人： Nobuaki Tsuji ,  Masao Noro ,  Terumitsu Maeno ,  Seiji Hirade

IPC分类号： H01L29/74 ,  H01L23/62

CPC分类号： H01L27/0255 ,  H01L27/0259 ,  H01L27/0288

摘要： A lateral PNP transistor PB and a lateral NPN transistor NB are serially connected between an input terminal and a reference potential (ground potential). In the transistor PB, a diode D1 is formed. In the transistor NB, a diode D3 is formed. When an ESD of +2000 V is input, the transistor NB turns on, whereas when an ESD of −2000 V is input, the transistor PB turns on. The level of a positive signal capable of being input is limited by the inverse breakdown voltage (e.g., 18 to 50 V) of the diode D3, whereas the level of a negative signal capable of being input is limited by the inverse breakdown voltage (e.g., 13 to 15 V) of the diode D1.

摘要翻译： 横向PNP晶体管PB和横向NPN晶体管NB串联连接在输入端子和参考电位（地电位）之间。 在晶体管PB中，形成二极管D 1 1。 在晶体管NB中，形成二极管D 3 3。 当输入+2000V的ESD时，晶体管NB导通，而当输入-2000V的ESD时，晶体管PB导通。 能够输入的正信号的电平受到二极管D 3 3的反向击穿电压（例如，18至50V）的限制，而能够输入的负信号的电平为 受二极管D 1 1的反向击穿电压（例如，13至15V）的限制。

公开(公告)号：US20050051847A1

公开(公告)日：2005-03-10

申请号：US10968685

申请日：2004-10-19

申请人： Nobuaki Tsuji ,  Masao Noro ,  Terumitsu Maeno ,  Seiji Hirade

发明人： Nobuaki Tsuji ,  Masao Noro ,  Terumitsu Maeno ,  Seiji Hirade

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/02 ,  H01L27/06 ,  H01L27/092 ,  H01L29/74

CPC分类号： H01L27/0255 ,  H01L27/0259 ,  H01L27/0288

摘要： A lateral PNP transistor PB and a lateral NPN transistor NB are serially connected between an input terminal and a reference potential (ground potential). In the transistor PB, a diode D1 is formed. In the transistor NB, a diode D3 is formed. When an ESD of +2000 V is input, the transistor NB turns on, whereas when an ESD of −2000 V is input, the transistor PB turns on. The level of a positive signal capable of being input is limited by the inverse breakdown voltage (e.g., 18 to 50 V) of the diode D3, whereas the level of a negative signal capable of being input is limited by the inverse breakdown voltage (e.g., 13 to 15 V) of the diode D1.

公开(公告)号：US06847059B2

公开(公告)日：2005-01-25

申请号：US09982335

申请日：2001-10-18

申请人： Nobuaki Tsuji ,  Masao Noro ,  Terumitsu Maeno ,  Seiji Hirade

发明人： Nobuaki Tsuji ,  Masao Noro ,  Terumitsu Maeno ,  Seiji Hirade

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/02 ,  H01L27/06 ,  H01L27/092 ,  H01L29/74 ,  H01L23/62

CPC分类号： H01L27/0255 ,  H01L27/0259 ,  H01L27/0288

摘要： A lateral PNP transistor PB and a lateral NPN transistor NB are serially connected between an input terminal and a reference potential (ground potential). In the transistor PB, a diode D1 is formed. In the transistor NB, a diode D3 is formed. When an ESD of +2000 V is input, the transistor NB turns on, whereas when an ESD of −2000 V is input, the transistor PB turns on. The level of a positive signal capable of being input is limited by the inverse breakdown voltage (e.g., 18 to 50 V) of the diode D3, whereas the level of a negative signal capable of being input is limited by the inverse breakdown voltage (e.g., 13 to 15 V) of the diode D1.

摘要翻译： 横向PNP晶体管PB和横向NPN晶体管NB串联连接在输入端子和参考电位（地电位）之间。 在晶体管PB中形成二极管D1。 在晶体管NB中，形成二极管D3。 当输入+2000V的ESD时，晶体管NB导通，而当输入-2000V的ESD时，晶体管PB导通。 能够输入的正信号的电平受到二极管D3的反向击穿电压（例如，18至50V）的限制，而能够被输入的负信号的电平受到反向击穿电压的限制（例如， ，13〜15V）。

公开(公告)号：US20090136064A1

公开(公告)日：2009-05-28

申请号：US12284935

申请日：2008-09-26

申请人： Tamito Suzuki ,  Seiji Hirade ,  Yukitoshi Suzuki

发明人： Tamito Suzuki ,  Seiji Hirade ,  Yukitoshi Suzuki

IPC分类号： H04R25/00

CPC分类号： H04R19/00 ,  H04R31/00

摘要： A vibration transducer is constituted of a substrate, a diaphragm having a conductive property, a plate having a conductive property, and a plurality of first spacers having pillar shapes which are formed using a deposited film having an insulating property joining the plate so as to support the plate relative to the diaphragm with a gap therebetween. It is possible to introduce a plurality of second spacers having pillar shapes support the plate relative to the substrate with a gap therebetween, and/or a plurality of third spacers having pillar shapes which support the diaphragm relative to the substrate with a gap therebetween. When the diaphragm vibrates relative to the plate, an electrostatic capacitance formed therebetween is varied so as to detect vibration with a high sensitivity. The diaphragm has a plurality of arms whose outlines are curved so that the intermediate regions thereof are reduced in width.

摘要翻译： 振动传感器由基板，具有导电性的隔膜，具有导电性的板构成，多个具有柱形状的第一间隔件，该第一间隔件具有使用具有连接板的绝缘性的沉积膜形成，以便支撑 该板相对于隔膜具有间隙。 可以引入具有支柱形状的多个第二间隔件，其间具有间隙地相对于基板支撑板，和/或多个第三间隔件，其具有支撑隔膜相对于基板的间隔的间隔的柱形。 当隔膜相对于板振动时，其间形成的静电电容变化，以便以高灵敏度检测振动。 隔膜具有多个臂，其轮廓弯曲，使得其中间区域的宽度减小。

公开(公告)号：US20090060232A1

公开(公告)日：2009-03-05

申请号：US12221573

申请日：2008-08-05

申请人： Seiji Hirade ,  Tamito Suzuki ,  Masayoshi Omura ,  Yuusaku Ebihara

发明人： Seiji Hirade ,  Tamito Suzuki ,  Masayoshi Omura ,  Yuusaku Ebihara

IPC分类号： H04R25/00

CPC分类号： H04R19/005 ,  H04R31/00

摘要： A condenser microphone includes a substrate having an opening in a back cavity, a diaphragm including a center portion and a plurality of arms extended in the radial direction from the center portion, a plate positioned opposite the diaphragm, and a support structure for supporting the periphery of the diaphragm and the periphery of the plate above the substrate while insulating the diaphragm and the plate both having conductive properties from each other. The support structure forms gaps between the substrate, the diaphragm, and the plate. Projections having insulating properties are formed in the center portion and the arms of the diaphragm so as to project towards the substrate and are separated from each other in the circumferential direction of the diaphragm. This prevents the diaphragm from being unexpectedly adhered and fixed to the substrate, thus improving the sensitivity of the condenser microphone.

摘要翻译： 一种电容式麦克风，包括：在后腔中具有开口的基板，包括中心部分的中心部分和沿径向方向从中心部延伸的多个臂的隔膜，与隔膜相对设置的板，以及支撑结构， 的隔膜和板的周边，同时使具有导电性质的隔膜和板彼此绝缘。 支撑结构在基板，隔膜和板之间形成间隙。 在隔膜的中心部分和臂部形成具有绝缘性能的突出部，以朝向基板突出，并且在隔膜的圆周方向上彼此分离。 这防止隔膜意外地粘附并固定到基板，从而提高电容式麦克风的灵敏度。