公开(公告)号：US20160233279A1

公开(公告)日：2016-08-11

申请号：US15132332

申请日：2016-04-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun Koyama ,  Mai Osada

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0809 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/0233 ,  G09G2320/043 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1296 ,  H01L27/32 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78654 ,  H01L29/7866 ,  H01L29/78672 ,  H01L29/78696 ,  H01L51/5203 ,  H01L2227/323

Abstract: There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs(max), a channel width is W a channel length is L, an average value of a threshold voltage is Vth, a deviation from the average value of the threshold voltage is ΔVth, and a difference in emission brightness of a plurality of EL elements is within a range of ±n%, a semiconductor display device is characterized in that A = 2   Id μ * C 0 A ( Vgs ( max ) - Vth ) 2 ≦ W L ≦ ( 1 + n 100 - 1 ) 2 * A Δ   Vth 2  Δ   Vth  ≦ ( 1 + n 100 - 1 ) * A * L / W

Abstract translation: 提供了一种亮度不均匀的EL发光装置。 当多个电流控制TFT的漏极电流为Id时，迁移率为μ，单位面积的栅极电容为Co，最大栅极电压为Vgs（max），沟道宽度为通道长度为L的通道宽度为 阈值电压的平均值为Vth，与阈值电压的平均值的偏差为ΔVth，并且多个EL元件的发光亮度差在±n％的范围内，半导体显示装置的特征在于 （1 + n 100 -1）2 * AΔVth Vth（1 + n 100 - 1）* A * L / W

公开(公告)号：US08638278B2

公开(公告)日：2014-01-28

申请号：US13792302

申请日：2013-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Mitsuaki Osame ,  Mai Osada

IPC: G09G3/30

CPC classification number: H01L27/3244 ,  G09G3/2022 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2300/0866 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2310/027 ,  G09G2310/0281 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2330/021 ,  G09G2330/028 ,  H01L27/32

Abstract: The present invention is intended to suppress power consumption of an EL display. In accordance with the brightness of an image to be displayed in a pixel portion, the contrast of the image is determined whether to be inverted or not, and the number of bits of the digital video signal to be input into the pixel portion is reduced, and the magnitude of a current to flow through the EL element is allowed to be maintained at a constant level even when a temperature of an EL layer changes by providing the EL display with another EL element to be used for monitoring a temperature.

Abstract translation: 本发明旨在抑制EL显示器的功耗。 根据要在像素部分中显示的图像的亮度，确定图像的对比度是否被反转，并且要输入到像素部分的数字视频信号的位数减少， 并且即使通过向用于监视温度的EL显示器提供另一EL元件来改变EL层的温度，也允许流过EL元件的电流的大小保持在恒定水平。

公开(公告)号：US10032840B2

公开(公告)日：2018-07-24

申请号：US15345677

申请日：2016-11-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Mai Osada

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  G09G3/3233 ,  G09G3/3275 ,  G09G3/3266

Abstract: There is provided a semiconductor device including a first pixel and a second pixel each including a transistor and an EL element including a pixel electrode electrically connected to the transistor. A ratio of a channel width (W) to a channel length (L) of the transistor in the first pixel is different from a ratio of a channel width (W) to a channel length (L) of the transistor in the second pixel.

公开(公告)号：US20140346481A1

公开(公告)日：2014-11-27

申请号：US14285773

申请日：2014-05-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Mai Osada

IPC: H01L27/32

CPC classification number: H01L27/3279 ,  H01L27/1214 ,  H01L27/3223 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/56 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.

Abstract translation: 提供了即使在大屏幕的情况下也能够实现低功耗的发光装置。 像素部分中的源极信号线或电源线的表面被电镀以减小布线的电阻。 像素部中的源极信号线通过与驱动电路部的源极信号线不同的步骤来制造。 像素部分中的电源线通过与在基板上引导的电源线不同的步骤来制造。 类似地，端子被电镀以实现电阻降低。 期望电镀前的布线由与栅电极相同的材料制成，并且布线的表面被电镀以形成源极信号线或电源线。

公开(公告)号：US20130299802A1

公开(公告)日：2013-11-14

申请号：US13946002

申请日：2013-07-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Mai Osada

IPC: H01L51/52

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0809 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/0233 ,  G09G2320/043 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1296 ,  H01L27/32 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78654 ,  H01L29/7866 ,  H01L29/78672 ,  H01L29/78696 ,  H01L51/5203 ,  H01L2227/323

Abstract: There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs(max), a channel width is W, a channel length is L, an average value of a threshold voltage is Vth, a deviation from the average value of the threshold voltage is ΔVth, and a difference in emission brightness of a plurality of EL elements is within a range of ±n %, a semiconductor display device is characterized in that A = 2  Id μ * C 0 A ( Vgs ( ma   x ) - Vth ) 2 ≦ W L ≦ ( 1 + n 100 - 1 ) 2 * A Δ   Vth 2  Δ   Vth  ≦ ( 1 + n 100 - 1 ) * A * L / W

Abstract translation: 提供了一种亮度不均匀的EL发光装置。 当多个电流控制TFT的漏极电流为Id时，迁移率为mu，单位面积的栅极电容为Co，最大栅极电压为Vgs（max），沟道宽度为W，沟道长度为L， 阈值电压的平均值为Vth，与阈值电压的平均值的偏差为ΔVth，多个EL元件的发光亮度差在±n％的范围内，半导体显示装置的特征在于 其中A = 2，Id mu * C 0 A（Vgs（ma cv x）-V th）2 @ WL @（1 + n 100 - 1）2 * A增益Vth 2Ä增量Vth扼@ （1 + n 100 - 1）* A * L / W

公开(公告)号：US09035853B2

公开(公告)日：2015-05-19

申请号：US14198756

申请日：2014-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Mai Osada

IPC: G09G3/30 ,  H01L27/32 ,  G09G3/32 ,  H01L27/12 ,  H01L51/52 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0809 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/0233 ,  G09G2320/043 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1296 ,  H01L27/32 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78654 ,  H01L29/7866 ,  H01L29/78672 ,  H01L29/78696 ,  H01L51/5203 ,  H01L2227/323

Abstract: There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs(max), a channel width is W, a channel length is L, an average value of a threshold voltage is Vth, a deviation from the average value of the threshold voltage is ΔVth, and a difference in emission brightness of a plurality of EL elements is within a range of ±n %, a semiconductor display device is characterized in that A = 2 ⁢ Id μ * C 0 A ( Vgs ( max ) - Vth ) 2 ≦ W L ≦ ( 1 + n 100 - 1 ) 2 * A Δ ⁢ ⁢ Vth 2  Δ ⁢ ⁢ Vth  ≦ ( 1 + n 100 - 1 ) * A * L / W

Abstract translation: 提供了一种亮度不均匀的EL发光装置。 当多个电流控制TFT的漏极电流为Id时，迁移率为μ，每单位面积的栅极电容为Co，最大栅极电压为Vgs（max），沟道宽度为W，沟道长度为L， 阈值电压的平均值为Vth，与阈值电压的平均值的偏差为＆Dgr; Vth，并且多个EL元件的发光亮度差在±n％的范围内，半导体显示装置 其特征在于A = 2 Idμ* C 0 A（Vgs（max）-Vth）2＆nlE; W L＆nlE; （1 + n 100 - 1）2 * A＆Dgr; 信号Vth 2＆Dgr; Vth Vth＆nlE; （1 + n 100 - 1）* A * L / W

公开(公告)号：US20170154940A1

公开(公告)日：2017-06-01

申请号：US15345677

申请日：2016-11-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun Koyama ,  Mai Osada

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0809 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/0233 ,  G09G2320/043 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1296 ,  H01L27/32 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78654 ,  H01L29/7866 ,  H01L29/78672 ,  H01L29/78696 ,  H01L51/5203 ,  H01L2227/323

Abstract: There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs(max), a channel width is W, a channel length is L, an average value of a threshold voltage is Vth, a deviation from the average value of the threshold voltage is ΔVth, and a difference in emission brightness of a plurality of EL elements is within a range of ±n %, a semiconductor display device is characterized in that A = 2  ID μ * C 0 A ( Vgs ( max ) - Vth ) 2 ≦ W L ≦ ( 1 + n 100 - 1 ) 2 * A Δ   Vth 2  Δ   Vth  ≦ ( 1 + n 100 - 1 ) * A * L / W

公开(公告)号：US09196663B2

公开(公告)日：2015-11-24

申请号：US14155432

申请日：2014-01-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Mitsuaki Osame ,  Mai Osada

IPC: H01L27/32 ,  G09G3/32 ,  G09G3/20

CPC classification number: H01L27/3244 ,  G09G3/2022 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2300/0866 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2310/027 ,  G09G2310/0281 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2330/021 ,  G09G2330/028 ,  H01L27/32

Abstract: The present invention is intended to suppress power consumption of an EL display. In accordance with the brightness of an image to be displayed in a pixel portion, the contrast of the image is determined whether to be inverted or not, and the number of bits of the digital video signal to be input into the pixel portion is reduced, and the magnitude of a current to flow through the EL element is allowed to be maintained at a constant level even when a temperature of an EL layer changes by providing the EL display with another EL element to be used for monitoring a temperature.

公开(公告)号：US20150243717A1

公开(公告)日：2015-08-27

申请号：US14710659

申请日：2015-05-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Mai Osada

IPC: H01L27/32 ,  H01L29/423 ,  H01L29/786 ,  H01L29/49

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0809 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/0233 ,  G09G2320/043 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1296 ,  H01L27/32 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78654 ,  H01L29/7866 ,  H01L29/78672 ,  H01L29/78696 ,  H01L51/5203 ,  H01L2227/323

Abstract: There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs(max), a channel width is W, a channel length is L, an average value of a threshold voltage is Vth, a deviation from the average value of the threshold voltage is ΔVth, and a difference in emission brightness of a plurality of EL elements is within a range of ±n %, a semiconductor display device is characterized in that A = 2   Id μ * C 0 A ( Vgs ( max ) - Vth ) 2 ≦ W L ≦ ( 1 + n 100 - 1 ) 2 * A Δ   Vth 2  Δ   Vth  ≦ ( 1 + n 100 - 1 ) * A * L  /  W

Abstract translation: 提供了一种亮度不均匀的EL发光装置。 当多个电流控制TFT的漏极电流为Id时，迁移率为μ，每单位面积的栅极电容为Co，最大栅极电压为Vgs（max），沟道宽度为W，沟道长度为L， 阈值电压的平均值为Vth，与阈值电压的平均值的偏差为＆Dgr; Vth，并且多个EL元件的发光亮度差在±n％的范围内，半导体显示装置 其特征在于：A = 2Idμ* C 0 A（Vgs（max）-V th）2＆nlE; W L＆nlE; （1 + n 100 - 1）2 * A＆Dgr; 晶片Vth 2＆Dgr; 信号Vth＆nlE; （1 + n 100-1）* A * L / W

公开(公告)号：US09793335B2

公开(公告)日：2017-10-17

申请号：US14982070

申请日：2015-12-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Mai Osada

IPC: H01L27/15 ,  H01L27/32 ,  H01L27/12 ,  H01L51/56

CPC classification number: H01L27/3279 ,  H01L27/1214 ,  H01L27/3223 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/56 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.