公开(公告)号：US20140138680A1

公开(公告)日：2014-05-22

申请号：US14164476

申请日：2014-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshiyuki Isa ,  Masafumi Morisue ,  Ikuko Kawamata

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1292 ,  H01L51/0022 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Abstract translation: 提供可以通过简化的工艺和制造技术制造的半导体器件和显示器件。 另一个目的是提供一种技术，通过该技术可以以可控制性形成具有期望形状的部分构成半导体器件或显示装置的布线等的图案。

公开(公告)号：US10818703B2

公开(公告)日：2020-10-27

申请号：US15214989

申请日：2016-07-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masafumi Morisue ,  Yasuhiro Jinbo ,  Gen Fujii ,  Hajime Kimura

IPC: H01L27/12 ,  G02F1/167 ,  H01L31/0392 ,  H01L29/786 ,  H01L51/00 ,  H01L51/56 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/1339 ,  H01L27/32 ,  H01L31/18

Abstract: A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.

公开(公告)号：US09793150B2

公开(公告)日：2017-10-17

申请号：US15254623

申请日：2016-09-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

IPC: H01L21/683 ,  H01L27/12 ,  H01L27/15 ,  H01L33/62 ,  G02F1/1333 ,  G02F1/1335 ,  H01L33/00 ,  H01L51/00

CPC classification number: H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

公开(公告)号：US09356152B2

公开(公告)日：2016-05-31

申请号：US14164476

申请日：2014-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshiyuki Isa ,  Masafumi Morisue ,  Ikuko Kawamata

IPC: H01L29/12 ,  H01L29/786 ,  H01L51/00 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1292 ,  H01L51/0022 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

公开(公告)号：US10229940B2

公开(公告)日：2019-03-12

申请号：US15782249

申请日：2017-10-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L27/15 ,  H01L33/62 ,  G02F1/1333 ,  G02F1/1335 ,  H01L21/683 ,  H01L33/00 ,  H01L51/00

Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

公开(公告)号：US09436036B2

公开(公告)日：2016-09-06

申请号：US14749962

申请日：2015-06-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

IPC: H01L29/18 ,  H01L33/00 ,  G02F1/1335 ,  H01L27/12 ,  H01L27/15 ,  H01L33/62 ,  G02F1/1333

CPC classification number: H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

公开(公告)号：US09082679B2

公开(公告)日：2015-07-14

申请号：US14450967

申请日：2014-08-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

IPC: H01L29/18 ,  H01L33/00 ,  H01L27/15 ,  H01L27/12 ,  H01L33/62

CPC classification number: H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

Abstract translation: 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。