公开(公告)号：US20140284597A1

公开(公告)日：2014-09-25

申请号：US14208982

申请日：2014-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Takahisa ISHIYAMA ,  Masaki KOYAMA ,  Erumu KIKUCHI ,  Takuya HIROHASHI ,  Masashi OOTA

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02678 ,  H01L21/02686 ,  H01L29/66969

Abstract: To improve crystallinity of an oxide semiconductor. To provide a crystalline oxide semiconductor film in which a crystallized region extends to the interface with a base or the vicinity of the interface, and to provide a method for forming the oxide semiconductor film. An oxide semiconductor film containing indium, gallium, and zinc is formed, and the oxide semiconductor film is irradiated with an energy beam, thereby being heated. Note that the oxide semiconductor film includes a c-axis aligned crystal region or microcrystal.

Abstract translation: 为了改善氧化物半导体的结晶度。 提供结晶化区域延伸到与基底或界面附近的界面的结晶氧化物半导体膜，并提供形成氧化物半导体膜的方法。 形成含有铟，镓和锌的氧化物半导体膜，并用能量束照射氧化物半导体膜，由此被加热。 注意，氧化物半导体膜包括c轴取向的晶体区域或微晶体。

公开(公告)号：US20130320332A1

公开(公告)日：2013-12-05

申请号：US13897502

申请日：2013-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Suguru HONDO ,  Akihisa SHIMOMURA ,  Masaki KOYAMA ,  Motomu KURATA ,  Kazuya HANAOKA ,  Sho NAGAMATSU ,  Kosei NEI ,  Toru HASEGAWA

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/46 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example.

公开(公告)号：US20150221754A1

公开(公告)日：2015-08-06

申请号：US14688199

申请日：2015-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Suguru HONDO ,  Akihisa SHIMOMURA ,  Masaki KOYAMA ,  Motomu KURATA ,  Kazuya HANAOKA ,  Sho NAGAMATSU ,  Kosei NEI ,  Toru HASEGAWA

IPC: H01L29/66 ,  H01L21/46

CPC classification number: H01L29/66969 ,  H01L21/46 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example.

Abstract translation: 提供具有稳定电特性的包括氧化物半导体膜的晶体管。 还提供了具有优异的导通状态特性的包括氧化物半导体膜的晶体管。 其中形成具有低电阻的氧化物半导体膜并且氧化物半导体膜的沟道区的电阻增加的半导体器件。 注意，氧化物半导体膜经受用于降低电阻以降低电阻的工艺。 用于降低氧化物半导体膜的电阻的方法可以是例如在高于或等于450℃且低于或等于740℃的温度下的激光处理或热处理。 例如，可以通过等离子体氧化或氧离子的注入来提高具有低电阻的氧化物半导体膜的沟道区域的电阻的方法。