公开(公告)号：US20240088232A1

公开(公告)日：2024-03-14

申请号：US18517115

申请日：2023-11-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei NEI ,  Tsutomu MURAKAWA ,  Toshihiko TAKEUCHI ,  Kentaro SUGAYA

IPC: H01L29/24 ,  H01L27/12 ,  H10B12/00

CPC classification number: H01L29/24 ,  H01L27/1225 ,  H10B12/312

Abstract: A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor. The first insulator and the fourth insulator are less likely than the second insulator to allow oxygen to pass through.

公开(公告)号：US20180108647A1

公开(公告)日：2018-04-19

申请号：US15725519

申请日：2017-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoki OKUNO ,  Kosei NEI ,  Hiroaki HONDA ,  Naoto YAMADE ,  Hiroshi FUJIKI

IPC: H01L27/02 ,  H01L27/11519 ,  H01L27/11565 ,  H01L29/786

CPC classification number: H01L27/0207 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11565 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

公开(公告)号：US20180102420A1

公开(公告)日：2018-04-12

申请号：US15722055

申请日：2017-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori ANDO ,  Hidekazu MIYAIRI ,  Naoto YAMADE ,  Asako HIGA ,  Miki SUZUKI ,  Yoshinori IEDA ,  Yasutaka SUZUKI ,  Kosei NEI ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L27/088 ,  H01L27/06 ,  H01L21/822 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/469 ,  H01L21/02 ,  C23C14/35 ,  C23C14/08

CPC classification number: H01L29/66969 ,  C23C14/086 ,  C23C14/351 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

公开(公告)号：US20240062724A1

公开(公告)日：2024-02-22

申请号：US18380221

申请日：2023-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki IKEDA ,  Hidetomo KOBAYASHI ,  Hideaki SHISHIDO ,  Kiyotaka KIMURA ,  Takashi NAKAGAWA ,  Kosei NEI

IPC: G09G3/3275 ,  G09G3/3233 ,  G09G3/3266 ,  G09G5/377 ,  H01L29/786 ,  H10K59/127

CPC classification number: G09G3/3275 ,  G09G3/3233 ,  G09G3/3266 ,  G09G5/377 ,  H01L29/7869 ,  H10K59/1275 ,  G09G3/36

Abstract: A high-definition display device is provided. A small display device is provided. In the display device, a first layer and a second layer are stacked and provided. The first layer includes a gate driver circuit and a source driver circuit, and the second layer includes a display portion. The gate driver circuit and the source driver circuit are provided to include a region overlapping with the display portion. The gate driver circuit and the source driver circuit have an overlap region where they are not strictly separated from each other. Five or more gate driver circuits and five or more source driver circuits can be provided.

公开(公告)号：US20220173249A1

公开(公告)日：2022-06-02

申请号：US17602433

申请日：2020-04-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takanori MATSUZAKI ,  Kosei NEI

IPC: H01L29/786

Abstract: A semiconductor device with less variation in transistor characteristics is provided. The semiconductor device includes a transistor, a first and a second conductor, and a first to a third insulator. The transistor and the first conductor are provided over the first insulator. The transistor includes an oxide semiconductor. The second insulator is provided over the transistor. The first conductor includes a region which does not overlap with the second insulator. The third insulator is provided to cover the first conductor, the transistor, and the second insulator. The second conductor is provided over the third insulator and at least partly overlaps with the first conductor.

公开(公告)号：US20200273886A1

公开(公告)日：2020-08-27

申请号：US16816423

申请日：2020-03-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime KIMURA ,  Tsutomu MURAKAWA ,  Kosei NEI ,  Hiroaki HONDA ,  Yusuke SHINO

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/84

Abstract: A semiconductor device which can suppress leakage current between a wiring and a connection electrode connected to a floating node is provided. The semiconductor device includes a first insulator, a first conductor over the first insulator, a second conductor over the first insulator, and a second insulator over the first insulator, the first conductor, and the second conductor. The first conductor and the second conductor contain a metal A (one kind or a plurality of kinds of aluminum, copper, tungsten, chromium, silver, gold, platinum, tantalum, nickel, molybdenum, magnesium, beryllium, indium, and ruthenium). The metal A is detected in an interface between the first insulator and the second insulator by an energy dispersive X-ray spectroscopy (EDX). The second insulator includes a groove for exposing the first insulator between the first conductor and the second conductor.

公开(公告)号：US20200006319A1

公开(公告)日：2020-01-02

申请号：US16561501

申请日：2019-09-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoki OKUNO ,  Kosei NEI ,  Hiroaki HONDA ,  Naoto YAMADE ,  Hiroshi FUJIKI

IPC: H01L27/02 ,  H01L27/11521 ,  H01L27/11519 ,  H01L27/11565 ,  H01L29/786

Abstract: A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

公开(公告)号：US20220137409A1

公开(公告)日：2022-05-05

申请号：US17429979

申请日：2020-02-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Hidetomo KOBAYASHI ,  Hideaki SHISHIDO ,  Kiyotaka KIMURA ,  Takashi NAKAGAWA ,  Kosei NEI ,  Kentaro HAYASHI

IPC: G02B27/01 ,  G06V40/16 ,  G06T7/73

Abstract: An object is to provide an electronic device capable of recognizing a user's facial feature accurately. A glasses-type electronic device includes a first optical component, a second optical component, a frame, an imaging device, a feature extraction unit, and an emotion estimation unit. The frame is in contact with a side surface of the first optical component and a side surface of the second optical component. The imaging device is in contact with the frame and has a function of detecting part of a user's face. The feature extraction unit has a function of extracting a feature of the user's face from the detected part of the user's face. The emotion estimation unit has a function of estimating information on the user from the extracted feature.

公开(公告)号：US20210167174A1

公开(公告)日：2021-06-03

申请号：US17047724

申请日：2019-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei NEI ,  Tsutomu MURAKAWA ,  Toshihiko TAKEUCHI ,  Kentaro SUGAYA

IPC: H01L29/24 ,  H01L27/108 ,  H01L27/12

Abstract: A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor. The first insulator and the fourth insulator are less likely than the second insulator to allow oxygen to pass through.

公开(公告)号：US20130320332A1

公开(公告)日：2013-12-05

申请号：US13897502

申请日：2013-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Suguru HONDO ,  Akihisa SHIMOMURA ,  Masaki KOYAMA ,  Motomu KURATA ,  Kazuya HANAOKA ,  Sho NAGAMATSU ,  Kosei NEI ,  Toru HASEGAWA

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/46 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example.